TD62001~004P/AP/F/AF
2001-06-27
1
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62001P,TD62001AP,TD62001F,TD62001AF,TD62002P
TD62002AP,TD62002F,TD62002AF,TD62003P,TD62003AP,TD62003F
TD62003AF,TD62004P,TD62004AP,TD62004F,TD62004AF
7CH DARLINGTON SINK DRIVER
The TD62001P / AP / F / AF Series are high-voltage, high-current
darlington drivers comprised of seven NPN darlington pairs.
All units feature integral clamp diodes for switching inductive
loads.
Applications include relay, hammer, lamp and display (LED)
drivers.
FEATURES
l Output current (single output) 500 mA MAX.
l High sustaining voltage output
35 V MIN. (TD62001P / F Series)
50 V MIN. (TD62001AP / AF Series)
l Output clamp diodes
l Inputs compatible with various types of logic
l Package Type-P, AP : DIP-16 pin
l Package Type-F, AF : SOP-16 pin
TYPE
INPUT BASE
RESISTOR
DESIGNATION
TD62001P / AP / F / AF
External
General Purpose
TD62002P / AP / F / AF
10.5-k + 7 V
Zenner diode
14~25 V PMOS
TD62003P / AP / F / AF
2.7 k
TTL, 5 V CMOS
TD62004P / AP / F / AF
10.5 k
6~15 V PMOS, CMOS
PIN CONNECTION
(TOP VIEW)
Weight
DIP16-P-300-2.54A : 1.11 g (Typ.)
SOP16-P-225-1.27 : 0.16 g (Typ.)
TD62001~004P/AP/F/AF
2001-06-27
2
SCHEMATICS
(EACH DRIVER)
TD62001P / AP / F / AF
TD62002P / AP / F / AF
TD62003P / AP / F / AF
TD62004P / AP / F / AF
Note:
The input and output parasitic diodes cannot be used as clamp diodes.
MAXIMUM RATINGS
(Ta = 25C)
CHARACTERISTIC SYMBOL
RATING
UNIT
P, F
-0.5~35
Output Sustaining
Voltage
AP, AF
V
CE (SUS)
-0.5~50
V
Output Current
I
OUT
500
mA / ch
Input Voltage
V
IN
(Note 1)
-0.5~30 V
Input Current
I
IN
(Note 2)
25
mA
P, F
35
Clamp Diode
Reverse Voltage
AP, AF
V
R
50
V
Clamp Diode Forward Current
I
F
500 mA
P 1.0
AP 1.47
Power Dissipation
F, AF
P
D
0.54 / 0.625
(Note
3)
W
P
-30~75
Operating
Temperature
AP, F, AF
T
opr
-40~85
C
Storage Temperature
T
stg
-55~150 C
Note 1: Except TD62001P / AP / F / AF
Note 2: Only TD62001P / AP / F / AF
Note 3: On glass epoxy PCB (30 30 1.6 mm Cu 50%)
TD62001~004P/AP/F/AF
2001-06-27
3
RECOMMENDED OPERATING CONDITIONS
(Ta = -40~85C and Ta = -30~75C for only Type-P)
CHARACTERISTIC SYMBOL CONDITION MIN
TYP.
MAX
UNIT
P, F
0
35
Output Sustaining
Voltage
AP, AF
V
CE (SUS)
0
50
V
Duty = 10%
0
370
AP
Duty = 50%
0
130
Duty = 10%
0
295
P
Duty = 50%
0
95
Duty = 10%
0
233
Output Current
F, AF
I
OUT
T
pw
= 25 ms
7 Circuits
Ta = 85C
T
j
= 120C
Duty = 50%
0
70
mA /
ch
Input Voltage
Except
TD62001P /
AP / F / AF
V
IN
0
24 V
TD62002 14.5
24
TD62003 2.8
24
Input Voltage
(Output On)
TD62004
V
IN (ON)
I
OUT
= 400 mA
h
FE
= 800
6.2
24
V
TD62001
0
0.6
TD62002
0
7.4
TD62003
0
0.7
Input Voltage
(Output Off)
TD62004
V
IN (OFF)
0
1.0
V
Input Current
Only TD62001
I
IN
0
10 mA
P, F
35
Clamp Diode Reverse
Voltage
AP, AF
V
R
50
V
Clamp Diode Forward Current
I
F
350
mA
P
0.6
AP
Ta = 85C
0.76
Power Dissipation
AF, F
P
D
Ta = 85C
(Note)
0.325
W
Note:
On glass epoxy PCB (30 30 1.6 mm Cu 50%)
TD62001~004P/AP/F/AF
2001-06-27
4
ELECTRICAL CHARACTERISTICS
(Ta = 25C unless otherwise noted)
CHARACTERISTIC SYMBOL
TEST
CIR-
CUIT
TEST CONDITION
MIN
TYP.
MAX
UNIT
V
CE
= 50 V, Ta = 25C
50
AP, AF
V
CE
= 50 V, Ta = 85C
100
V
CE
= 35 V, Ta = 25C
50
F
V
CE
= 35 V, Ta = 85C
100
V
CE
= 35 V, Ta = 25C
50
Output Leakage
Current
P
I
CEX
1
V
CE
= 35 V, Ta = 75C
100
A
I
OUT
= 350 mA, I
IN
= 500 A
1.3 1.6
I
OUT
= 200 mA, I
IN
= 350 A
1.1 1.3
Collector-Emitter Saturation Voltage
V
CE (sat)
2
I
OUT
= 100 mA, I
IN
= 250 A
0.9 1.1
V
DC Current Transfer Ratio
h
FE
2 V
CE
= 2 V, I
OUT
= 350 mA
1000
TD62002 V
IN
= 20 V, I
OUT
= 350 mA
1.1 1.7
TD62003 V
IN
= 2.4 V, I
OUT
= 350 mA
0.4 0.7
Input Current
(Output On)
TD62004
I
IN (ON)
3
V
IN
= 9.5 V, I
OUT
= 350 mA
0.8 1.2
mA
P I
OUT
= 500 A, Ta = 75C
50
65
Input Current
(Output Off)
AP, F, AF
I
IN (OFF)
4
I
OUT
= 500 A, Ta = 85C
50
65
A
I
OUT
= 350 mA
13.7
TD62002
I
OUT
= 200 mA
11.4
I
OUT
= 350 mA
2.6
TD62003
I
OUT
= 200 mA
2.0
I
OUT
= 350 mA
4.7
Input Voltage
(Output On)
TD62004
V
IN (ON)
5
V
CE
= 2 V
h
FE
= 800
I
OUT
= 200 mA
4.4
V
V
R
= 50 V, Ta = 25C
50
AP, AF
V
R
= 50 V, Ta = 85C
100
V
R
= 35 V, Ta = 25C
50
F
V
R
= 35 V, Ta = 85C
100
V
R
= 35 V, Ta = 25C
50
Clamp Diode
Reverse Current
P
I
R
6
V
R
= 35 V, Ta = 75C
100
A
Clamp Diode Forward Voltage
V
F
7 I
F
= 350 mA
2.0 V
Input Capacitance
C
IN
15 pF
P, F
V
OUT
= 35 V, R
L
= 87.5
C
L
= 15 pF
0.1
Turn-On Delay
AP, AF
t
ON
8
V
OUT
= 50 V, R
L
= 125
C
L
= 15 pF
0.1
P, F
V
OUT
= 35 V, R
L
= 87.5
C
L
= 15 pF
0.2
Turn-Off Delay
AP, AF
t
OFF
8
V
OUT
= 50 V, R
L
= 125
C
L
= 15 pF
0.2
s
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