TG2206F
2002-07-31
1
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2206F
RF SPDT Swith
Switch The Receive Filter for Mobile Communication
Switch The Diversity Antenna
Switch The Local Signal
Features
l Low insertion loss: L
OSS
= 0.4dB (typ.)
l Hight isolation: ISL = 28dB (typ.)
l Low voltage operation: V
C
= 0 V/2.5 V
l Small package: SM6 package (2.9 1.6 1.1 mm)
Pin Assignment
(top view)
Marking
Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
V
C1
5 V
Control voltage
V
C2
5 V
Input power
P
i
1
W
Operating temperature range
T
opr
-40~85 C
Storage temperature range
T
stg
-55~125 C
Caution
This device is electrostatic sensitivity. Please handle with caution.
Weight: 0.014 g (typ.)
TG2206F
2002-07-31
3
Test Circuit 1
(RF
Test Circuit)
Please fix the value of each capacity for using frequency and circuit.
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
Recommend Capacity
85 MHz
0.8~1 GHz
1.6 GHz
2 GHz
C1
100 pF
100 pF
22 pF
9 pF
C2
100 pF
16 pF
10 pF
9 pF
C3
150 pF
13 pF
4 pF
3 pF
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