TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
October 14, 2005
1
6-13 GHz Low Noise Amplifier TGA8399B-SCC
Key Features and Performance
6-13 GHz Frequency Range
1.5 dB Typical Noise Figure Midband
26 dB Nominal Gain
High Input Power Handling: ~ 20dBm
Balanced Input for Low VSWR
5V @ 65mA Self Bias
0.25um pHEMT Technology
Chip Dimensions 3.1 x 2.4 x 0.15 mm
Primary Applications
Point-to-Point Radio
X Band Radar, ECM
8
10
12
14
16
18
20
22
24
26
28
6
7
8
9
10
11
12
13
Frequency (GHz)
Sm
a
ll Signa
l Ga
in (dB
)
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
Ret
u
rn
L
o
ss (
d
B)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6
7
8
9
10
11
12
13
Frequency (GHz)
No
i
se F
i
g
u
re (
d
B)
4
5
6
7
8
9
10
11
12
13
14
P1
d
B
(d
Bm)
NF
Pout
Gain
Input RL
Output RL
Typical Electrical Characteristics
Self Bias, Vd=5V, 65mA
Description
The TriQuint TGA8399B-SCC is a monolithic self-
biased low noise amplifier with a balanced input
for low VSWR. This LNA operates from 6 to 13
GHz with a typical mid band noise figure of 1.5
dB. The device features high gain of 26 dB
across the band, while providing a nominal output
power at P1dB gain compression of 11dBm.
Typical input and output return loss is 18 dB.
Ground is provided to the circuitry through vias to
the backside metallization. The TGA8399B-SCC
low noise amplifier is suitable for a variety of
commercial and high frequency applications, C
and X band applications such as radar receivers,
electronic counter measures, decoys, jammers
and phased array systems. At 5V the drain
current is approximately 65 mA and can be
increased or decreased by selection of the
appropriate source resistors in each stage. For
an application note concerning drain current
selection see:
http://www.triquint.com/company/divisions/millime
ter_wave/AppNote_self_bias_of_8399b_c2.pdf
Lead-free and RoHS compliant
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
October 14, 2005
2
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
8 V
4/
V
-
Negative Supply Voltage Range
-5V TO 0V
I
+
Positive Supply Current (Quiescent)
100 mA
4/
P
IN
Input Continuous Wave Power
22 dBm
P
D
Power Dissipation
1.95W
3/ 4/
T
CH
Operating Channel Temperature
150
0
C
1/ 2/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
reduced from 9.2E+8 to 2.5E+6 hours.
4/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
TABLE II
DC PROBE TEST
(TA = 25
C
5
C)
NOTES
SYMBOL
LIMITS
UNITS
MIN
MAX
I
DSS1
Information Only
mA
I
MAX
169
290
mS
Gm1
99
239
mS
1/
|V
P1,2,3,4,5
|
0.5
1.5
V
1/
|V
BVGD1
|
8
30
V
1/
|V
BVGS1
|
8
30
V
1/ V
P
, V
BVGD
, and V
BVGS
are negative.
TGA8399B-SCC
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
October 14, 2005
3
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST
CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to backside of
carrier)
Vd = 5 V
I
D
= 65 mA
Pdiss = 0.325 W
82.14
37.354
9.2E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70
C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
TABLE III
RF CHARACTERISTICS
(T
A
= 25
C + 5
C)
NOTE
TEST
MEASUREMENT
CONDITIONS
VALUE
UNITS
Self Bias, Vd=5V
MIN
TYP
MAX
1/
Small Signal Gain
F = 6 - 13 GHz
23
26
dB
Power Output
@ 1 dB Gain Compression
F = 6 - 13 GHz
11
dBm
2/
Noise Figure
F = 6 - 13 GHz
F = 10 GHz
2.0
2.5
dB
dB
1/
Input Return Loss Magnitude
F = 6 - 13 GHz
-18
-9.5
dB
1/
Output Return Loss
Magnitude
F = 6 - 13 GHz
-18
-9.5
dB
1/
RF probe data is taken at 1 GHz steps
2/
RF probe data is taken at 10 GHz.
TGA8399B-SCC
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
October 14, 2005
4
Typical On-Wafer Electrical Characteristics
Sefl Bias, Vd=5V, Room Temperature
23
24
25
26
27
28
29
6
7
8
9
10
11
12
13
Frequency (GHz )
G
a
in
(
d
B
)
5th
10th
20th
30th
40th
50th
60th
70th
80th
90th
95th
0.0
0.5
1.0
1.5
2.0
2.5
3.0
6
7
8
9
10
11
12
Frequency (GHz)
NF
(
d
B)
5th
10th
20th
30th
40th
50th
60th
70th
80th
90th
95th
TGA8399B-SCC
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
October 14, 2005
5
-40
-35
-30
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
13
Frequency (GHz )
IR
L
(
d
B
)
5th
10th
20th
30th
40th
50th
60th
70th
80th
90th
95th
-40
-35
-30
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
13
Frequency (GHz )
OR
L
(
d
B
)
5th
10th
20th
30th
40th
50th
60th
70th
80th
90th
95th
Typical On-Wafer Electrical Characteristics
Sefl Bias, Vd=5V, Room Temperature
TGA8399B-SCC
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