2N3904
NPN SMALL SIGNAL TRANSISTOR
Features
Epitaxial Planar Die Construction
Available in both Through-Hole and Surface
Mount Packages
Ideal for Switching and Amplifier Applications
Complementary PNP Type Available
(2N3906)
Characteristic
Symbol
2N3904
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current - Continuous
I
C
100
mA
Collector Current - Peak
I
CM
200
mA
Power Dissipation
(Note 1)
P
d
500
mW
Thermal Resistance, Junction to Ambient
(Note 1)
R
JA
250
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Mechanical Data
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Type Number
Weight: 0.18 grams (approx.)
D
C B E
H
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
h
FE
50
70
100
60
30
300
-V
CE
= 1.0V,- I
C
= 0.1mA
-V
CE
= 1.0V,- I
C
= 1.0mA
-V
CE
= 1.0V,- I
C
= 10mA
-V
CE
= 1.0V,- I
C
= 50mA
-V
CE
= 1.0V,- I
C
= 100mA
Collector Saturation Voltage
V
CE(SAT)
0.25
0.40
V
(Note 2)
-I
C
= 10mA,- I
B
= 1.0mA
-I
C
= 50mA,- I
B
= 5.0mA
Base Saturation Voltage
V
BE(SAT)
0.85
0.95
V
(Note 2)
-I
C
= 10mA, -I
B
= 1.0mA
-I
C
= 50mA, -I
B
= 5.0mA
Collector Cutoff Current
I
CEX
50
nA
-V
EB
= 3.0V, -V
CE
= 30V
Emitter Cutoff Current
I
BL
50
nA
-V
EB
= 3.0V, -V
CE
= 30V
Collector-Base Breakdown Voltage
V
(BR)CBO
60
--
V
-I
C
= 10A, -I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
--
V
-I
C
= 1.0mA,- I
E
= 0 (Note 2)
Emitter-base Breakdown voltage
V
(BR)EBO
5.0
--
V
-I
E
= 10A,- I
C
= 0
Gain Bandwidth Product
f
T
250
--
MHz
V
CE
= 20V, -I
C
= 10mA,
-f = 100MHz
Collector-Base Capacitance
C
CBO
4.5
pF
-V
CB
= 5.0V, -I
E
= 0, f = 100kHz
Emitter-Base Capacitance
C
EBO
10
pF
-V
EB
= 0.5V, -I
C
= 0, f = 100kHz
Noise Figure
5.0
dB
-V
CE
= 5.0V, -I
C
= 100 A,
R
G
= 1.0k , -f = 10 to 15000Hz
Delay Time
t
d
35
ns
-I
B1
= 1.0mA, -I
C
= 10mA,
V
CC
= 3.0V, V
BE(off)
= 0.5V
Rise Time
t
r
35
ns
-I
B1
= 1.0mA,- I
C
= 10mA,
-V
CC
= 3.0V, -V
BE(off)
= 0.5V
Storage Time
t
s
225
ns
-I
B1
=- I
B2
= 1.0mA,
-I
C
= 10mA, -V
CC
= 3.0V
Fall Time
t
f
75
ns
-I
B1
=- I
B2
= 1.0mA,
-I
C
= 10mA, -V
CC
= 3.0V
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
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