TO-92 Plastic-Encapsulate
d Transistors
2N4401
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.625 W (Tamb=25
)
Collector current
I
CM :
0.6 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS ( Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100
A , I
E
=0
60 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 1mA , I
B
=0 40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100A, I
C
=0 6 V
Collector cut-off current
I
CBO
V
CB
=50 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=35 V , I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V , I
C
=0
0.1
A
DC current gain
h
FE 1
V
CE
=1 V, I
C
= 150mA
100
300
Collector-emitter saturation voltage
V
CE(sat)
I
C
=150 mA, I
B
=15mA 0.4 V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 150 mA, I
B
=15mA 0.95 V
Transition frequency
f
T
V
CE
= 10V, I
C
= 20mA
f =
100MHz
250 MHz
1
2
3
TO-92
1.EMILTTER
2.BASE
3. COLLECTOR
Transys
Electronics
L I M I T E D
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