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Электронный компонент: ARGP10D

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- 582 -
A R G P10D
TH R U
A R G P10M
Fast Soft-R ecovery C ontrolled Avalanche R ectifiers
Voltage R ange
200 to 1000 Volts
Features
H igh tem perature m etallurgically bonded
constructed
Plastic m aterial used carries U nderw riters
Laboratory C lassification 94V-0
G lass passivated cavity-free junction
H igh m axim um operating tem perature
Low leakage current
Excellent
stability
G uaranteed avalanche energy absorption capability
H igh tem perature soldering guaranteed:
350
o
C / 10 seconds, 0.375"(9.5m m ) lead length, 5
lbs., (2.3kg) tension.
M echanical D ata
C ase: JED EC D O -41 m olded plastic over glass
body
Lead: P lated Axial leads, solderable per
M IL-STD -750, M ethod 2026
Polarity: C olor band denotes cathode end
M ounting position: Any
W eight: 0.012 ounce, 0.3 gram
D O -41
















D im ensions in inches and (m illim eters)
M axim um R atings and Electrical C haracteristics
R ating at 25
am bient tem perature unless otherw ise specified.
Type N um ber
Sym bol A R G P
10D
A R G P
10G
A R G P
10J
A R G P
10K
A R G P
10M
U nits
M axim um R ecurrent Peak R everse Voltage
V
R R M
200 400 600 800 1000
V
M axim um R M S Voltage
V
R M S
140 280 420 560 700 V
M axim um D C B locking Voltage
V
R
200 400 600 800 1000
V
M in. R everse A valanche Breakdow n Voltage
@ IR =0.1m A
V
(BR )R
300 500 700 900 1100
V
M axim um Average Forw ard R ectified C urrent
.375" (9.5m m ) Lead Length @ T
tp
= 55
I
F(AV)
1.3 A
Peak Forw ard Surge C urrent
@ t= 8.3 m s Single H alf Sine-w ave
Superim posed on R ated Load (JEDEC method )
@ t=10m s half sine w ave, Tj=Tjm ax prior to
surge, VR =V
R R M
m ax
I
FSM
30
20
A
A
N on-repetitive P eak R everse A valanche Energy
L=120m H Tj=125
m ax prior to Surge,
Inductive load Sw itched off
E
R SM
10 7
m J
M axim um Instantaneous
Forw ard V oltage @ IF= 1.0A
@ IF=1A, Tj=Tj m ax.
V
F
1.3
1.1
V
V
M axim um D C R everse C urrent @ T
J
=25
at R ated D C Blocking Voltage @ T
J
=165
I
R
1.0
100.0
uA
uA
M axim um R everse R ecovery Tim e ( N ote 1 ) T
J
=25
Trr
250 300
nS
Typical Junction C apacitance ( N ote 2 )
C j
15.0 pF
Typical Therm al R esistance (N ote 3)
R
JA
R
TP
120
55
O
C /W
O perating Tem perature R ange T
J
T
J
-65 to + 175
O
C
Storage Tem perature R ange T
S TG
T
STG
-65 to + 175
O
C
N otes: 1. R everse R ecovery Test C onditions: I
F
=0.5A, I
R
=1.0A R ecover to 0.25A.
2. M easured at 1.0 M H z and Applied R everse Voltage of 4.0 Volts.
3. M ount on C u-Pad Size 5m m x 5m m on P.C .B .
- 583 -
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (ARGP10D THRU ARGP10M)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK
FOR
W
ARD
SURGE
CURRENT
.
(A)
1
10
100
30
10
0
20
NUMBER OF CYCLES AT 60Hz
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION
CAP
ACIT
ANCE.(pF)
1
10
100
10
0
100
REVERSE VOLTAGE. (V)
Tj=25 C
0
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
.
(A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
1
10
0.1
FORWARD VOLTAGE. (V)
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
A
VERAGE
FOR
W
ARD
CURRENT
.
(A)
25
50
75
125
175
150
100
0
0.25
0.75
1.0
0.5
TIE POINT TEMPERATURE. ( C)
o
0.375" (9.5mm) LEAD LENGTH
FIG.6- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
,
MICROAMPERES
0
20
40
60
80
100
120
140
10
20
1
0.1
0.01
PERCENT OF RATED PEAK REVERSE
VOLTAGE. (%)
Tj=125 C
0
Tj=75 C
0
Tj=25 C
0
1.25
1.5
RESISTIVE OR
INDUCTIVE LOAD