- 402 -
ES1A THRU ES1J
1.0 AMP. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
1.0 Ampere
Features
a
Glass passivated junction chip
a
For surface mounted application
a
Low profile package
a
Built-in strain relief,
a
Ideal for automated placement
a
Easy pick and place
a
Superfast recovery time for high efficiency
a
Glass passivated chip junction
a
High temperature soldering:
260
O
C/10 seconds at terminals
a
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Mechanical Data
a
Cases: Molded plastic
a
Terminals: Solder plated
a
Polarity: Indicated by cathode band
a
Packing: 12mm tape per E1A STD RS-481
a
Weight: 0.064 gram
SMA/DO-214AC
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
+
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ES
1A
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1H
ES
1J
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
50 100 150 200 300 400 500 600
V
Maximum RMS Voltage
V
RMS
35
70
105 140 210 280 350 420
V
Maximum DC Blocking Voltage
V
DC
50 100 150 200 300 400 500 600
V
Maximum Average Forward Rectified Current
See Fig. 1
I
(AV)
1.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I
FSM
30 A
Maximum Instantaneous Forward Voltage
@ 1.0A
V
F
0.95 1.3
1.7
V
Maximum DC Reverse Current @ T
A
=25
+
at Rated DC Blocking Voltage @ T
A
=100
+
I
R
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
35 nS
Typical Junction Capacitance ( Note 2 )
Cj
10 8
pF
Maximum Thermal Resistance (Note 3)
R
JA
R
JL
85
35
+
/W
Operating Temperature Range
T
J
-55 to +150
+
Storage Temperature Range
T
STG
-55 to + 150
+
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2"(5.0 x 5.0mm) Copper Pad Area.
REV.1 Oct.-2003
- 403 -
RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J)
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK
FOR
W
ARD
SURGE
CURRENT
.
(A)
1
10
100
30
20
10
5.0
25
15
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
(JEDEC Method) at T =120 C
L
o
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
.
(A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
1
10
50
0.1
FORWARD VOLTAGE. (V)
ES1A
-
D
ES1F
-
J
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
A
VERAGE
FOR
W
ARD
CURRENT
.
(A)
80
90
100
120
140
150
130
110
0
0.2
0.6
0.8
1.2
1.0
0.4
LEAD TEMPERATURE. ( C)
o
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
.(
A
)
0
20
40
60
80
100
120
140
10
100
1000
1
0.1
0.01
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=125 C
0
Tj=85 C
0
Tj=25 C
0
1
0
0
10
100
14
10
6.0
4.0
2.0
12
8.0
FIG.5- TYPICAL JUNCTION CAPACITANCE
JUNCTION
CAP
ACIT
ANCE.(pF)
REVERSE VOLTAGE. (V)
ES1A
- D
ES1
F - J
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
PDF 
ZIP