TSM3442
1-1
2003/12 rev. A
TSM3442
20V N-Channel Enhancement Mode MOSFET
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 3.6A = 60m
R
DS (on)
, Vgs @ 2.5V, Ids @ 3.1A = 90m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
N-Channel 2.5V (G-S) MOSFET
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Ordering Information
Part No.
Packing
Package
TSM3442CX6
Tape & Reel
3000pcs / Per Reel
SOT-26
Block Diagram
Absolute Maximum Rating
(Ta = 25 unless otherwise noted)
Parameter Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V V
Gate-Source Voltage
V
GS
8 V
Continuous Drain Current
I
D
3.6
A
Pulsed Drain Current
I
DM
10 A
Ta = 25
o
C 1.5
Maximum Power Dissipation
Ta = 75
o
C
P
D
1.0
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol
Limit
Unit
Lead Temperature (1/8" from case)
T
L
5 S
Junction to Ambient Thermal Resistance (PCB mounted)
R
ja
100
o
C/W
Note: Surface mounted on FR4 board t<=5sec.
Pin assignment:
1. Drain
6. Drain
2. Drain
5, Drain
3. Gate
4. Source
TSM3442
2-2
2003/12 rev. A
Electrical Characteristics
Rate I
D
= 2.4A, (Ta = 25
o
C unless otherwise noted)
Parameter Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA
BV
DSS
20 -- -- V
Drain-Source On-State
Resistance
V
GS
= 4.5V, I
D
= 3.6A
R
DS(ON)
-- 45 60
Drain-Source On-State
Resistance
V
GS
= 2.5V, I
D
= 3.1A
R
DS(ON)
-- 70 90
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.45 -- -- V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
-- --
1.0
uA
Gate Body Leakage
V
GS
= 8V, V
DS
= 0V
I
GSS
-- --
100
nA
On-State Drain Current
V
DS
5V, V
GS
= 4.5V
I
D(ON)
6 -- -- A
Forward Transconductance
V
DS
= 5V, I
D
= 3.6A
g
fs
--
10
--
S
Dynamic
Total Gate Charge
Q
g
--
5.0
10
Gate-Source Charge
Q
gs
--
0.65
--
Gate-Drain Charge
V
DS
= 10V, I
D
= 3.6A,
V
GS
= 4.5V
Q
gd
--
1.5
--
nC
Turn-On Delay Time
t
d(on)
-- 7 15
Turn-On Rise Time
t
r
--
55
80
Turn-Off Delay Time
t
d(off)
-- 16
60
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
t
f
--
10
25
nS
Input Capacitance
C
iss
--
450
--
Output Capacitance
C
oss
--
70 --
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
43 --
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
1.6
A
Diode Forward Voltage
I
S
= 1.0A, V
GS
= 0V
V
SD
--
0.75
1.2
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM3442
3-3
2003/12 rev. A
SOT-26 Mechanical Drawing
SOT-26 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 2.70 3.00 0.106 0.118
B 0.25 0.50 0.010 0.020
C 1.90(typ)
0.075(typ)
D 0.95(typ)
0.037(typ)
E 1.50 1.70 0.059 0.067
F 1.05 1.35 0.041 0.053
H 2.60 3.00 0.102 0.118
L 0.60(typ)
0.024(typ)
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