CHA2066RBF
Ref. : DSCHA2066RBF2317 -13-Nov.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Self biased Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a two-stage self biased wide
band monolithic low noise amplifier.
The MMIC is manufactured with a standard
PM-HEMT process: 0.25m gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
Broad band performance: 10-16GHz
Gain = 15dB (typical)
Noise Figure 2.0dB (typical)
Output power (P
-1dB
) 13dBm (typical)
Return loss < -6dB
SMD leadless package
Dimensions: 5.08 x 5.08 x 0.97 mm
3
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN 1."
CHA2066RBF
10-16GHz Low Noise Amplifier
Ref. : DSCHA2066RBF2317 -13-Nov.-02
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Schematic
Typical Bias Conditions
for an ambient Temperature of +25C, 55mA typical
Symbol Pin
No.
Parameter
Values Unit
Vdd
6
Drain bias voltage
4.0
V
Idd 6
Drain
current
55
mA
All other pins are not used for this device.
Absolute Maximum Ratings
(1)
Tamb = +25C
Symbol Parameter
(1)
Values
Unit
Vd
Drain bias voltage
4.5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range (3)
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
10-16GHz Low Noise Amplifier
CHA2066RBF
Ref. : DSCHA2066RBF2317 -13-Nov.-02
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical results on PCB (recommended motherboard layout)
Vd=4V, Id= 55mA
Gain & Return Loss
-20
-16
-12
-8
-4
0
4
8
12
16
20
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Linear Gain (dB)
Input Return Loss (dB)
Output Return Loss (dB)
Noise Figure (dB)
0
1
2
3
4
5
6
9
10
11
12
13
14
15
16
17
Frequency (GHz)
CHA2066RBF
10-16GHz Low Noise Amplifier
Ref. : DSCHA2066RBF2317 -13-Nov.-02
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Output power @ 1dB compression (dBm)
0
2
4
6
8
10
12
14
16
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
10-16GHz Low Noise Amplifier
CHA2066RBF
Ref. : DSCHA2066RBF2317 -13-Nov.-02
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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