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Электронный компонент: CHA2094B

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CHA2094b
Ref. : DSCHA20949312 08-Nov.-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2094 is a three-stage monolithic low
noise amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems.
The circuit is manufactured with a HEMT
process : 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 36-40GHz
3.0dB Noise Figure
21dB gain
1.5dB gain flatness
Low DC power consumption, 60mA @ 3.5V
Chip size :
1.72 X 1.08 X 0.10 mm
Vgs1&2
Vgs3
Vds
IN
OUT
Vds
Typical on wafer measurements :
Frequency (GHz)
Gain & NF ( dB )
0
4
8
12
16
20
24
34
35
36
37
38
39
40
41
42
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
36
40
GHz
G
Small signal gain
18
21
dB
P1dB
Output power at 1dB gain compression
5
8
dBm
NF
Noise figure
3.0
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA2094b
36-40GHz Low Noise Amplifier
Ref. : DSCHA20949312 08-Nov.-99
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd1,2,3 = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
36
40
GHz
G
Small signal gain (1)
18
21
dB
G
Small signal gain flatness (1)
1.5
dB
Gsb
Gain flatness over 40MHz ( within -30 ; +75C )
0.5
dBpp
Is
Reverse isolation (1)
25
30
dB
P1dB
Output power at 1dB gain compression
5
8
dBm
VSWRin
Input VSWR (1)
2.5:1
3.0:1
VSWRout
Output VSWR (1)
2.5:1
3.0:1
NF
Noise figure (2)
3.0
4.0
dB
Vd
DC Voltage
Vd
Vg
-2
3.5
-0.25
4
+0.4
V
V
Id
Bias current (2)
60
100
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
36-40GHz Low Noise Amplifier
CHA2094b
Ref. : DSCHA20949312 08-Nov.-99
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Vd = 3.5 Volt, Id = 60 mA.
Freq.
GHz
S11
dB
S11
/
/
S12
dB
S12
/
/
S21
dB
S21
/
/
S22
dB
S22
/
/
25,00
-2,96
165,27
-48,02
140,03
-16,95
-110,44
-10,05
-118,86
26,00
-3,22
155,96
-49,76
133,48
-11,32
-109,43
-10,84
-124,50
27,00
-3,67
144,32
-51,68
113,25
-5,73
-112,96
-11,84
-133,29
28,00
-4,43
129,06
-53,38
148,20
0,02
-123,12
-13,68
-140,35
29,00
-5,76
107,80
-51,07
153,30
5,87
-138,63
-15,98
-152,02
30,00
-8,60
75,37
-49,11
129,75
11,83
-163,77
-21,67
-162,85
31,00
-15,20
16,43
-43,10
102,32
17,22
158,34
-29,55
-46,20
32,00
-24,70
-117,32
-41,34
47,85
19,91
110,72
-17,96
-70,62
33,00
-32,32
128,04
-41,14
-5,29
20,48
71,50
-17,40
-106,13
34,00
-21,29
-38,29
-40,51
-43,14
20,60
40,20
-19,96
-133,62
35,00
-14,52
-70,72
-39,47
-69,20
20,79
12,71
-24,56
178,55
36,00
-11,33
-94,87
-38,30
-90,11
20,92
-13,60
-24,34
95,27
37,00
-9,96
-113,38
-37,80
-109,61
20,87
-38,94
-18,55
56,67
38,00
-9,89
-129,95
-35,94
-126,74
20,54
-63,47
-14,97
35,23
39,00
-10,20
-144,39
-35,21
-146,49
19,98
-85,35
-13,19
15,89
40,00
-11,51
-153,53
-34,78
-160,72
19,57
-105,56
-11,91
7,58
41,00
-13,21
-157,59
-34,26
-175,92
18,86
-125,69
-10,90
-5,61
42,00
-13,92
-154,55
-33,87
172,60
18,41
-143,91
-10,93
-16,38
43,00
-13,55
-158,17
-33,94
156,97
18,09
-160,70
-11,24
-20,60
44,00
-13,26
-169,25
-33,11
149,30
17,84
-178,94
-10,76
-22,75
45,00
-12,63
174,58
-32,50
134,15
17,56
162,79
-10,73
-25,23
46,00
-11,41
151,40
-32,48
126,00
17,17
143,77
-10,27
-26,04
47,00
-10,18
125,52
-31,57
119,05
16,79
124,08
-9,19
-30,65
48,00
-8,38
94,26
-29,97
102,75
16,21
102,47
-8,20
-37,96
49,00
-5,83
71,80
-31,11
79,31
15,23
80,21
-7,79
-48,28
50,00
-4,17
49,01
-32,37
66,58
13,86
58,54
-7,34
-61,88
51,00
-2,17
29,23
-36,86
59,57
12,36
38,69
-8,29
-75,36
52,00
-1,17
11,23
-34,48
52,60
10,48
19,05
-9,08
-85,34
53,00
-0,84
-2,48
-38,67
15,86
8,26
1,67
-9,77
-96,49
54,00
-0,55
-14,01
-40,49
-6,97
5,94
-13,96
-10,59
-106,13
55,00
-0,36
-22,96
-42,95
-5,11
3,49
-27,62
-11,16
-116,76
CHA2094b
36-40GHz Low Noise Amplifier
Ref. : DSCHA20949312 08-Nov.-99
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Output Power ( P-1dB gain compression ) Measurements.
( CW on wafer )
Conditions : Vd = 3.5 Volt, Frequency = 38 GHz.
4
6
8
10
12
14
16
18
20
22
20
30
40
50
60
70
80
90
100
Current Id ( mA )
Gain & P-1dB ( dB, dBm )
Gain
P-1dB
Conditions : Id = 60 mA, Frequency = 38 GHz.
4
6
8
10
12
14
16
18
20
22
2.5
3
3.5
4
4.5
Bias voltage Vd ( Volt )
Gain & P-1dB ( dB, dBm )
Gain
P-1dB
36-40GHz Low Noise Amplifier
CHA2094b
Ref. : DSCHA20949312 08-Nov.-99
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical ( Gain & NF ) versus Id Measurements ( on wafer ).
Conditions : Vd = 3.5 Volt, Frequency = 38 GHz.
4
9
14
19
24
0
10
20
30
40
50
60
70
80
90
100
Current Id ( mA )
Gain ( dB )
0
1
2
3
4
5
6
7
8
9
10
NF ( dB )
Gain
NF
Typical Measurements in Test Jig.
Bias Conditions :
Vd = 3.5 Volt, Id = 50 mA.
4
9
14
19
24
36
37
38
39
40
41
42
43
44
45
46
47
Frequency ( GHz )
Gain ( dB )
0
1
2
3
4
5
6
7
8
9
10
NF ( dB )
GAIN
NF