CHA2098b
Ref. : DSCHA20981233 21- August-01
1/
8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz High Gain Buffer Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2098b is a high gain broadband three-
stage monolithic buffer amplifier. It is designed
for a wide range of applications, from military to
commercial communication systems.
The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a P-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 20-40GHz
16dBm output power ( 1dB gain comp. )
19dB
1.5dB gain
Low DC power consumption, 150mA @ 3.5V
Chip size : 1.67 X 0.97 X 0.10 mm
IN
OUT
Vd1
Vd2,3
Vg1
Vg2
Vg3
Typical on-wafer results :
-25
-15
-5
5
15
25
10
15
20
25
30
35
40
45
Frequency ( GHz )
Main Characteristics
Tamb. = 25C
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
20
40
GHz
G
Small signal gain
17
19
dB
P1dB
Output power at 1dB gain compression
13
16
dBm
Id Bias
current
150 200 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA2098b
20-40GHz High Gain Buffer Amplifier
Ref. : DSCHA20981233 21-August-01
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd1,2,3 = 3.5V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range (1)
20
40
GHz
G
Small signal gain (1)
17
19
dB
G
Small signal gain flatness (1)
1.5
dB
Is
Reverse isolation (1)
30
dB
P1db
Output power at 1dB gain compression (1)
13
16
dBm
P03
Output power at 3dB gain compression
15
16
dBm
VSWRin Input VSWR (1)
3.0:1
VSWRout Output VSWR (1)
3.0:1
NF Noise
figure
10.0 dB
Id Bias
current
150 200 mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
20-40GHz High Gain Buffer Amplifier
CHA2098b
Ref. : DSCHA20981233 21-August-01
3/
8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Performance
Tamb=+25C, Vd=3.5V, Vg=-0.1V
10
11
12
13
14
15
16
17
18
19
20
18
22
26
30
34
38
FREQUENCY (GHz)
GA
IN
(d
B
)
Gain vs Frequency
-30
-25
-20
-15
-10
-5
0
18
22
26
30
34
38
FREQUENCY (GHz)
INP
U
T RE
TURN LO
S
S
(
d
B)
-30
-25
-20
-15
-10
-5
0
O
U
TP
UT RE
TURN LO
S
S
(
d
B)
Input
Output
Input and Output Loss vs. Frequency
CHA2098b
20-40GHz High Gain Buffer Amplifier
Ref. : DSCHA20981233 21-August-01
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
15
16
17
18
19
20
21
22
23
24
25
20
22
24
26
28
30
32
34
36
38
FREQUENCY (GHz)
G
A
IN (
d
B)
0
2
4
6
8
10
12
14
16
18
20
P-
1
d
B (
d
Bm)
Gain
P-1dB
Gain and Compressed Power vs. Frequency
0
2
4
6
8
10
12
14
16
18
20
10
11
12
13
14
15
16
17
18
19
OUTPUT POWER (dBm)
G
A
IN (dB)
0
2
4
6
8
10
12
14
16
18
20
POW
E
R ADDED EF
F
I
CIENCY (%
)
Gain
PAE
Gain and Efficiency Vs Output Power (F=30GHz)
0
5
10
15
20
25
-12
-10
-8
-6
-4
-2
0
INPUT POWER (dBm)
P
O
UT (dBm),
G
A
I
N
(dB)
100
130
160
190
220
250
IDS (
m
A)
Gain
Pout
IDS
Gain, Output Power and IDS vs. Input Power (F=38GHz)
20-40GHz High Gain Buffer Amplifier
CHA2098b
Ref. : DSCHA20981233 21-August-01
5/
8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Parameters (on Wafer)
Bias conditions: Vd=3.5V Vg=0V
Freq. S11 S11 S12 S12 S21 S21 S22 S22
GHz
dB / dB / dB / dB /
15 -18.37 116.1 -69.59 148.0 16.72 130.6 -7.99 77.7
16 -19.49 113.8 -65.95 154.4 18.13 102.0 -10.02 51.4
17 -20.63 113.4 -65.20 -158.1 18.90 73.7 -13.84 20.3
18 -22.15 114.4 -60.58 155.1 19.31 46.4 -16.29 -13.8
19 -24.36 120.5 -58.79 155.7 19.42 22.3 -19.17 -64.4
20 -26.49 140.0 -54.42 136.8 19.97 -1.6 -18.06 -99.8
21 -24.05 163.8 -51.83 127.3 19.63 -27.5 -16.16 -138.5
22 -22.26 156.6 -52.04 81.3 18.79 -46.8 -16.79 -168.8
23 -21.20 159.0 -60.55 107.0 18.65 -57.2 -17.79 168.2
24 -20.46 150.9 -54.03 100.6 19.86 -80.0 -18.36 -171.8
25 -20.57 148.8 -50.49 90.6 19.82 -102.7 -15.84 175.6
26 -20.37 145.4 -49.95 75.8 19.89 -121.3 -15.59 171.0
27 -20.01 141.8 -49.48 67.0 19.82 -142.0 -14.72 159.9
28 -20.38 136.9 -48.65 53.7 19.60 -161.3 -14.17 154.0
29 -20.51 132.4 -48.33 37.5 19.53 -179.4 -13.37 144.0
30 -21.26 127.2 -49.24 25.1 19.45 162.3 -12.84 131.6
31 -21.82 125.6 -47.95 22.8 19.64 144.2 -13.15 123.6
32 -22.62 129.0 -47.60 3.6 19.53 123.6 -12.50 114.6
33 -21.97 127.4 -48.30 -3.7 19.28 104.7 -12.28 102.1
34 -22.69 118.7 -45.57 -22.6 19.27 86.4 -11.93 93.5
35 -23.12 114.3 -47.53 -45.6 19.15 66.9 -11.82 79.2
36 -22.50 103.9 -48.92 -49.1 18.96 46.8 -12.13 67.7
37 -22.15 91.0 -48.07 -69.1 18.52 28.3 -12.07 58.5
38 -20.65 71.9 -49.33 -67.4 18.36 10.1 -11.87 47.6
39 -18.94 39.2 -46.75 -105.6 18.43 -9.4 -10.98 36.1
40 -17.28 8.4 -47.08
-108.5
18.34 -31.1
-10.60 19.8
41 -14.60 -18.5 -48.00 -134.6 17.82 -53.7 -10.11 6.4
42 -12.20
-40.3
-47.52
-160.4
17.39 -76.8 -9.83 -7.0
43 -10.21 -59.7 -46.21 160.6 16.75 -99.2 -9.28 -20.8
44 -8.25 -80.9 -49.74 147.7 15.88 -123.1 -8.54 -37.0
45 -6.83 -97.6 -48.99 136.5 14.64 -145.6 -8.12 -50.7
46 -5.68
-113.3
-53.12
32.5 13.15
-167.2
-7.61
-62.9
47 -4.73 -129.1 -50.08 -34.8 11.65 172.2 -7.25 -77.1
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