CHA2157
Ref. : DSCHA21579090
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55-60GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2157 is a two stages low noise and
medium power amplifier. It is designed for a
wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a HEMT
process, 0.15m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
3.5 dB noise figure
10 dB
1dB gain
15 dBm output power (-1dB gain comp.)
DC power consumption, 80mA @ 3.3V
Chip size :
1.71 x 1.04 x 0.10 mm
-20
-15
-10
-5
0
5
10
15
55
56
57
58
59
60
Frequency (GHz)
Gain & Rloss (dB)
Gain
S11
S22
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
55
60
GHz
G
Small signal gain
8
10
12
dB
NF
Noise figure
3.5
4.5
dB
P1dB
Output power at 1dB gain compression
13
15
dBm
Id
Bias current
80
150
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA2157
55-60GHz Low Noise Amplifier
Ref. : DSCHA21579090
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.3V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
55
60
GHz
G
Small signal gain (1)
8
10
12
dB
G
Small signal gain flatness (1)
1.0
2.0
dB
Is
Reverse isolation (1)
20
25
dB
NF
Noise figure
3.5
4.5
dB
P1dB
CW output power at 1dB compression (1)
13
15
dBm
VSWRin
Input VSWR (1)
3.0:1
6.0:1
VSWRout
Output VSWR (1)
3.0:1
6.0:1
Vd
DC Voltage
3.3
3.8
V
Id
Bias current
80
150
mA
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
TBD
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
55-60GHz Low Noise Amplifier
CHA2157
Ref. : DSCHA21579090
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +3.3V, Vg1 = Vg2 to have Id = 80 mA
F(GHz)
S11
S11
S12
S12
S21
S21
S22
S22
dB
deg
dB
deg
dB
deg
dB
deg
15
-6,19
168,5
-53,85
104,2
-4,75
-110,1
-2,94
146,8
16
-6,01
163,4
-53,05
83,1
-5,02
-126
-3,07
142,5
17
-5,78
158,3
-55,51
61,9
-5,8
-141,7
-3,32
138,2
18
-5,57
152,8
-63,53
136,7
-6,59
-154,4
-3,34
134,5
19
-5,32
148,7
-49,37
58,7
-6,68
-164,3
-3,7
127,7
20
-5,04
142,7
-51,91
58,7
-7,14
-174
-4,2
123,4
21
-4,8
137,4
-51,32
48,4
-7,51
172,8
-4,71
120,3
22
-4,5
131,6
-52,83
40,4
-8,77
162,3
-5,05
118
23
-4,32
125,4
-50,9
67
-9,37
162,4
-5,33
114
24
-4,06
119,8
-49,33
39,6
-9,09
150,7
-6,14
111,7
25
-3,83
113,1
-49,97
36,3
-10,11
142,7
-6,85
111,1
26
-3,65
106,5
-49,38
37,1
-11,13
139,8
-7,43
113,4
27
-3,56
99,7
-47,44
39,9
-11,39
143,2
-7,66
116,1
28
-3,42
93,1
-45,59
23,7
-10,79
145,5
-7,83
120,6
29
-3,33
85,6
-46,24
25
-9,24
145,2
-7,15
127,2
30
-3,32
78,1
-43,98
12,4
-7,26
139,8
-5,72
129,5
31
-3,35
70,4
-42,56
2
-5,66
125,3
-4,07
126,3
32
-3,47
62,2
-41,07
-12,4
-5,35
110,7
-2,81
117,8
33
-3,69
53,6
-40,29
-28,3
-5,21
98,9
-2,13
107,8
34
-4,05
44,7
-40,08
-46,4
-5,56
91,8
-1,91
97,8
35
-4,58
35
-40,8
-63,2
-5,61
88,6
-1,95
88,9
36
-5,45
24,5
-41,16
-70,6
-4,92
89,3
-2,12
80,9
37
-6,88
13,9
-41,12
-84,2
-3,29
88
-2,3
73,4
38
-9,34
3,7
-42,27
-89,6
-1,05
83,8
-2,51
66,2
39
-13,51
-1,3
-41,21
-108,8
1,77
74,4
-2,7
58,2
40
-21,64
49,9
-41,07
-130,8
4,18
55,5
-3,22
50,2
41
-13,04
95,8
-47,32
-151,5
5,47
38,5
-3,59
43,3
42
-7,18
87,7
-50,87
-74,5
7,16
20,8
-4,06
34,9
43
-4,19
70,7
-42,36
-79,2
8,35
-0,2
-4,88
26,9
44
-2,48
53,6
-38,05
-96,4
9,2
-19,7
-5,68
20
45
-1,56
37,1
-35,54
-113,9
9,96
-39,3
-6,66
12,8
46
-1,13
22
-34,48
-122,1
10,55
-58,1
-7,73
6,5
47
-0,93
6
-32,16
-127,2
11,32
-77
-9,16
0,1
48
-1,23
-8,5
-28,67
-156,4
11,99
-98
-10,87
0,2
49
-2,14
-22
-28,47
176,8
12,18
-121
-11,61
6,6
50
-3,09
-34,3
-29,18
157,7
12,1
-142,7
-11,33
7,5
51
-4,76
-42,4
-29,48
147,1
11,94
-163,6
-10,87
5,3
52
-6,29
-45,5
-27,33
127,2
11,65
176,6
-10,03
2,7
53
-7,54
-46,3
-27,27
99,4
11,31
156,8
-9,34
-6,2
54
-7,99
-42,1
-27,59
81,8
10,87
137,9
-8,91
-16,1
55
-7,63
-39
-27,52
64,5
10,44
119,9
-8,6
-27
56
-6,75
-39,3
-27,7
50,7
10
102,2
-8,49
-37,5
57
-5,78
-43,8
-26,84
38,4
9,64
84,8
-8,27
-48,9
58
-4,75
-51,4
-26,96
22,3
9,39
67,5
-8,12
-59,8
59
-4,31
-63,3
-26,49
4,2
9,1
46,8
-8,13
-69,7
60
-4,01
-71,9
-26,42
-10,1
8,56
30,1
-7,89
-80,5
CHA2157
55-60GHz Low Noise Amplifier
Ref. : DSCHA21579090
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Measurements
Bias conditions: Tamb = +25C, Vd = 3.3V, Vg1 = Vg2 to have Id = 80mA
-20
-15
-10
-5
0
5
10
15
0
10
20
30
40
50
60
Frequency (GHz)
Gain & Rloss (dB)
Gain
S11
S22
-20
-15
-10
-5
0
5
10
15
55
56
57
58
59
60
Frequency (GHz)
Gain & Rloss (dB)
Gain
S11
S22
Typical packaged Measurements
Bias conditions: Tamb = +25C, Vd = 3.3V, Vg1 = Vg2 to have Id = 80mA
-20
-15
-10
-5
0
5
10
15
50
52
54
56
58
60
Frequency (GHz)
Gain & Rloss (dB)
Gain
S11
S22
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
50
52
54
56
58
60
Frequency (GHz)
Gain & NF (dB)
Gain
NF
55-60GHz Low Noise Amplifier
CHA2157
Ref. : DSCHA21579090
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
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