CHA2190
Ref : DSCHA21902036 -05-Feb.-02-
1/9
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
self biased
GaAs Monolithic Microwave IC
Description
The circuit is a two-stages self biased wide
band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25m gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Feature
Broad band performance 20-30GHz
2.2dB noise figure
15dB gain,
0.5dB gain flatness
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1.670 x 1.03x 0.1mm
Main Characteristics
On wafer typical
measurement
Tamb = +25C
Symbol Parameter Min
Typ
Max
Unit
NF
Noise figure at freq : 40GHz
2.2
3
dB
G Gain
13 15 dB
G
Gain flatness
.0.5
1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
-26
-22
-18
-14
-10
-6
-2
2
6
10
14
18
14
16
18
20
22
24
26
28
30
32
34
36
Frequency ( GHz )
dBS
ij & NF (
dB )
dBS11
dBS21
dBS22
NF
CHA2190
20-30GHz Low Noise Amplifier
Ref :
DSCHA21902036 -05-Feb.-02-
2/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = +4V (On wafer)
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
20
30
Ghz
G Gain
(1)
13 15 dB
G
Gain flatness (1)
0.5
1
dB
NF
Noise figure (1)
2.2
3
dB
VSWRin Input VSWR (1)
3.0:1
VSWRout Ouput VSWR (1)
3.0:1
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain compression (2)
11 dBm
Id
Drain bias current (3)
50
70
mA
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased
See chip biasing option page 8
(3) This current is the typical value for low noise and low current consumption biasing :
Vd=4V , Vg1=Vg2=0V or not connected.
Absolute Maximum Ratings
(4)
Tamb = +25C
Symbol Parameter Values
Unit
Vd
Vg
Drain bias voltage (6)
Vg1 and Vg2 max
4.5
+1
V
V
Pin
Maximum peak input power overdrive (5)
15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(4) Operation of this device above anyone of these paramaters may cause permanent damage.
(5) Duration < 1s.
(6) See chip biasing options page 8/9
20-30GHz Low Noise Amplifier
CHA2190
Ref : DSCHA21902036 -05-Feb.-02-
3/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Scattering parameters ) :
Tamb = +25C
Vd=4V Id=+50mA
Freq
dBS11
PS11
dBS12
PS12
dBS21
PS21
dBS22
PS22
mod.
pha.
mod.
pha.
mod.
pha.
mod.
pha.
GHz
dB
deg.
dB
deg.
dB
deg.
dB
deg.
2.00
-0.37
-74.86
-70.84
-53.91
-29.15
56.50
-2.03
-84.36
5.00
-0.53
-151.19
-61.97
-91.19
-54.49
149.52
-4.15
-155.38
8.00
-0.59
157.19
-63.84
-162.71
-21.34
-178.25
-5.97
161.51
9.00
-0.66
141.20
-64.59
167.32
-14.41
176.87
-6.38
149.74
10.00
-0.79
125.32
-62.91
152.65
-7.52
163.27
-7.07
136.72
11.00
-1.00
109.39
-62.00
165.51
-1.20
140.92
-8.02
124.05
12.00
-1.26
93.11
-61.10
65.75
4.21
111.98
-9.38
111.29
13.00
-1.33
73.86
-54.13
-36.78
8.62
79.00
-11.25
101.00
14.00
-1.39
52.92
-45.84
-88.69
12.13
43.65
-14.06
92.70
15.00
-1.79
26.36
-41.70
-126.55
14.89
7.60
-16.84
90.96
16.00
-3.06
-7.27
-38.40
-159.80
16.82
-31.20
-19.09
106.80
17.00
-5.59
-46.11
-36.52
168.18
17.53
-68.31
-17.25
106.98
18.00
-9.90
-88.64
-34.29
139.94
17.39
-102.75
-16.27
97.39
19.00
-13.09
-132.63
-34.84
112.28
16.98
-131.32
-17.29
75.43
20.00
-14.29
-179.39
-34.82
93.31
16.44
-156.45
-18.70
49.82
21.00
-14.48
143.23
-34.24
79.42
15.90
-179.20
-21.00
23.10
22.00
-14.71
118.23
-33.88
62.77
15.50
160.71
-20.27
-12.66
23.00
-14.92
100.80
-33.65
47.72
15.38
141.01
-20.10
-51.60
24.00
-15.42
87.80
-32.93
34.93
15.30
121.05
-17.74
-76.68
25.00
-16.38
78.89
-32.22
20.45
15.22
101.34
-16.09
-98.65
26.00
-16.55
77.15
-31.63
3.26
15.22
81.83
-14.40
-114.01
27.00
-16.33
77.12
-30.73
-11.52
15.24
61.81
-13.10
-131.22
28.00
-14.66
71.74
-30.72
-31.79
15.28
41.14
-12.13
-145.23
29.00
-13.19
61.95
-29.96
-45.41
15.27
20.38
-11.55
-159.84
30.00
-11.49
46.38
-29.74
-65.11
15.22
-1.31
-11.52
-175.03
31.00
-10.10
25.97
-29.29
-84.32
15.13
-23.85
-11.39
171.38
32.00
-8.49
1.99
-29.08
-104.88
14.92
-47.58
-12.30
155.28
33.00
-7.01
-24.08
-29.25
-127.09
14.46
-72.54
-13.60
135.95
34.00
-5.76
-50.88
-28.83
-147.90
13.73
-98.45
-16.45
111.53
35.00
-4.56
-78.91
-29.98
-177.63
12.61
-124.59
-22.00
75.08
36.00
-3.67
-103.63
-31.24
165.34
11.09
-149.58
-20.99
-22.73
37.00
-3.02
-125.99
-31.84
144.11
9.30
-173.89
-17.26
-69.71
38.00
-2.57
-146.23
-35.07
127.07
7.29
163.92
-12.77
-88.90
39.00
-2.18
-162.01
-35.66
98.71
5.36
143.17
-10.42
-108.31
40.00
-1.82
-178.56
-36.87
109.75
3.19
121.75
-8.88
-119.32
CHA2190
20-30GHz Low Noise Amplifier
Ref :
DSCHA21902036 -05-Feb.-02-
4/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Typical Gain , Matching and Noise Figure (On wafer Measurements)
Tamb = +25C
Vd = 4V Vg1 and Vg2 non connected; Id = 50mA
Typical gain slope versus temperature : -0.025dB/C
Typical noise figure slope versus temperature : 0.011dB/C
Chip Typical Response (In test Jig )
-26
-22
-18
-14
-10
-6
-2
2
6
10
14
18
14
16
18
20
22
24
26
28
30
32
34
36
Frequency ( GHz )
dBS2
1
& NF ( dB )
-26
-22
-18
-14
-10
-6
-2
2
6
10
14
18
R
Losses(dB
)
dBS21
NF
dBS11
dBS22
0
2
4
6
8
10
12
14
16
18
20
22
24
18
20
22
24
26
28
30
32
34
36
Frequency (GHz)
G
a
/ NF
(
d
B)
0
20
40
60
80
100
120
Id
(
m
A)
Id( Vd=4.5V Vg2=+1V)
Id (Vd=4V)
Id (Vd=4V Vg2=-1V)
Gain: Vd=4V
NF : (all biasing options)
Gain: Vd=4.5V Vg2=+1V
Gain: Vd=4V Vg2=-1V
20-30GHz Low Noise Amplifier
CHA2190
Ref : DSCHA21902036 -05-Feb.-02-
5/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Circuit typical response (In test-Jig):
Power measurements (Vd=4V)
Typical Output Power (Measurement in test Jig)
Tamb = +25C
These values are representative of the package assembly with input and output bonding.
T
ypical Output power 1dB for typical biasing
0
4
8
12
16
20
24
28
32
36
40
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Frequency (GHz)
P-1
d
B
(dB
m
) / Ga
in (P-1
dB
) dB
-20
-10
0
10
20
30
40
50
60
70
80
Id (mA)
I
d (Vd=4V)
I
d (Vd=4.5V Vg2=+1V
Gain P-1dB (Vd=4V)
Gain P-1dB (Vd=4.5V Vg2=+1V)
P-1dB (Vd=4V)
P-1dB (Vd=4.5V Vg2=+1V)
I
d (Vd=4V vg2=-1V
Gain P-1dB (Vd=4V Vg2=-1V)
P-1dB (Vd=4.5V Vg2=+1V)
11
13
15
17
19
21
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input Power (dBm)
Gain (
d
B
)
-5
-3
-1
1
3
5
7
9
11
13
15
Output Powe
r(dBm)
GAIN dB(20GHz)
GAIN dB(24GHz)
GAIN dB(28GHz)
GAIN dB(30GHz)
GAIN dB(32GHz)
POUT dBm (20GHz)
POUT dBm (24GHz)
POUT dBm (28GHz)
POUT dBm (30GHz)
POUT dBm (32GHz)
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