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Электронный компонент: CHA2194-99F

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CHA2194
Ref : DSCHA21942035 -04-Feb.-02
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-44GHz Low Noise Amplifier
Self biased
GaAs Monolithic Microwave IC
Description

The circuit is a three-stage self biased wide
band monolithic low noise amplifier,
designed for 36GHz to 44GHz point to point
and point to multipoint communication .

The circuit is manufactured with a standard
HEMT process : 0.25m gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.

Main Feature
Broad band performance 36-44GHz
3dB noise figure
19dB gain,
0.5dB gain flatness
Low DC power consumption, 45mA
20dBm 3rd order intercept point
Chip size : 1.670 x 0.970x 0.1mm

Main Characteristics
On wafer typical
measurement
Tamb = +25C
Symbol Parameter Min
Typ
Max
Unit
NF
Noise figure at freq : 40GHz
3
4
dB
G Gain
17 19 dB
G
Gain flatness
0.5
1
dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
Frequency ( GHz )
G
a
in
&
N
F
( d
B
)
-25,00
-15,00
-5,00
5,00
15,00
25,00
RLosses(dB)
dBS21
NF
dBS11
dBS22
CHA2194
36-44GHz Low Noise Amplifier
Ref : DSCHA21942035 -04-Feb.-02
2/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = +3,5V (On wafer)
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
36
44
Ghz
G Gain
(1)
17 19 dB
G
Gain flatness (1)
0.5
1
dB
NF
Noise figure (1) (freq: 36-40 GHz)
3
4
dB
VSWRin Input VSWR (1)
2.5:1
3.0:1
VSWRout Ouput VSWR (1)
2:5:1
3.0:1
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain compression
8
10
dBm
Id
Drain bias current (2)
45
75
mA

(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2) This current is the typical value for low noise and low current consumption biasing :
Vd=3.5V , Vg12 and Vg3 not connected.

Absolute Maximum Ratings
(3)
Tamb = +25C
Symbol Parameter Values
Unit
Vd
Vg
Id
Drain bias voltage (5)
Vg12 and Vg3 max
Drain current
4
+1
75
V
V
mA
Pin
Maximum peak input power overdrive (4)
15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C

(3) Operation of this device above anyone of these paramaters may cause permanent damage.

(4) Duration < 1s.

(5) See chip biasing options page 9
36-44GHz Low Noise Amplifier
CHA2194
Ref : DSCHA21942035 -04-Feb.-02
3/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Result
Chip Typical Response ( On wafer Scattering parameters ) :
Tamb = +25C
Vd=3.5V Id=+42mA
F(GHz)
S11 S12 S21 S22
mod Pha mod Pha mod Pha mod Pha
dB deg dB deg dB deg dB deg
2,00 -4,39 -56,73 -75,42 44,36 -37,71 179,84 -0,11 -26,01
4,00 -3,92 -86,19 -68,73 -0,07 -38,99 144,86 -0,41 -51,53
6,00 -3,01 -111,00 -68,42 -40,89 -38,00 82,75 -0,87 -75,92
8,00 -2,33 -132,18 -62,78 -61,43 -31,40 -24,55 -1,53 -98,47
10,00 -1,87 -149,64 -58,07 -92,78 -22,10 -68,40 -2,33 -120,41
12,00 -1,57 -164,59 -54,16 -118,46
-15,19 -121,90 -3,50 -140,34
14,00 -1,35 -177,94 -51,89 -167,25
-11,48 -177,68 -4,77 -158,48
16,00 -1,25 169,65 -52,93 158,44 -10,44 129,48 -6,27 -176,02
18,00 -1,16 157,50 -51,04 165,85 -11,48 84,35 -8,13 163,01
20,00 -1,09 144,51 -49,77 164,40 -15,47 49,64 -12,66 138,91
22,00 -1,01 130,06 -48,14 114,15 -22,72 64,72 -16,87 134,36
24,00 -0,99 113,68 -47,48 73,88 -18,51 144,50 -25,93 129,23
25,00 -1,00 104,41 -48,97 61,97 -10,74 152,58 -35,08 177,75
26,00 -1,05 93,20 -48,69 52,80 -4,00 142,49 -27,71
-121,39
27,00 -1,15 80,32 -48,51 18,34 1,96 125,50 -25,75
-116,09
28,00 -1,42 63,49 -49,95 6,77 7,45 100,83
-22,24
-115,84
29,00 -2,17 40,77 -47,16 -37,23 12,59 70,07 -25,05 -110,45
30,00 -4,74 10,16 -44,24 -94,27 16,78 28,35 -21,79 -68,00
31,00 -11,78 -12,14 -41,60 -147,89
18,62 -19,04 -15,03 -77,79
32,00 -17,20 17,23 -41,18 175,51 18,62 -57,49 -13,03 -96,11
33,00 -16,20 20,67 -41,81 148,47 18,49 -87,41 -12,36 -107,46
34,00 -17,00 -2,28 -39,78 125,02 18,57 -113,67 -11,84 -116,00
35,00 -19,78 -48,40 -39,87 112,63 18,87 -138,52 -11,68 -122,31
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45,00 -9,14 15,96 -30,72 -59,51 18,88 -30,61 -9,22 158,00
46,00 -6,61 -8,98 -31,56 -86,95 18,39 -60,43 -9,63 130,78
47,00 -4,21 -34,87 -33,12 -117,26
17,52 -91,46 -10,19 94,17
48,00 -3,45 -62,16 -35,95
-136,86
15,52 -122,46
-11,03 49,86
49,00 -2,71 -84,52 -37,02
-153,94
13,00 -148,98
-10,81 7,88
50,00 -2,35 -102,45
-38,27 165,40 10,38 -171,73 -9,71 -23,44
CHA2194
36-44GHz Low Noise Amplifier
Ref : DSCHA21942035 -04-Feb.-02
4/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Scattering parameters) :
Tamb = +25C
Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA
Typical Gain , Matching and Noise Figure ( Measurements on wafer.)
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60
Frequency ( GHz )
Gain & NF
(
dB
)
-25,00
-15,00
-5,00
5,00
15,00
25,00
RLosses
(
dB
)
dBS21
NF
dBS11
dBS22
36-44GHz Low Noise Amplifier
CHA2194
Ref : DSCHA21942035 -04-Feb.-02
5/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response (In test JIG)
Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA

Typical gain slope versus temperature : -0.025dB/C
Typical noise figure slope versus temperature : 0.011dB/C
Typical Gain and NF versus temperature (measurements in test jig )
Typical Gain & Pout versus temperature (measurements in test-jig)
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
-20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10
-9
-8
-7
-6
-5
-4
Input power (dBm)
Ou
t
p
u
t
P
o
wer
(
d
B
m
)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Gain (dB
)
Pout (dBm) 40GHz +25C
Pout (dBm) 40GHz +85C
Pout (dBm) 40GHz -40C
GAIN (dB) 40GHz +25C
GAIN (dB) 40GHz +85C
GAIN (dB) 40GHz -40C
-5
-3
-1
1
3
5
7
9
11
13
15
17
19
21
23
25
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49
frequency (GHz)
Ga(dB)
0
2
4
6
8
10
12
14
NF(
d
B)
Gain Vd:3,5V 42mA T:+25C
Gain Vd=3,5V 47mA T:+85C
Gain Vd:3,5V 57mA T:-40C
NF Vd=3,5V +25C
NF Vd=3,5V +85C
NF Vd=3,5V -40C