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Электронный компонент: CHA5215a-99F

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CHA5215a
Ref. : DSCHA52150160 -08-Jun-00
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5.8GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5215a is a MMIC multifunction
integrating a 3-stage medium power
amplifier, a gain control and an output
detector. A high saturated output power
allows a linear operating point for
multichannel communication applications.
The output power can be controlled thanks
to the combination of a detected output
voltage and an important gain control
dynamic range.
The circuit is manufactured with a standard
0.7m implanted power MESFET, air
bridges, via holes through the substrate
and electron beam gate lithography
process. It is supplied in chip form or in
ceramic flat-pack package.
Main Features
Wide operating frequency range
High saturated output power
High linearity
High gain
High dynamic gain control
Output power monitor
Chip dimensions : 2.47 x 1.27 x 0.10 mm
IN
OUT
Vg
Vd
Gc
Ref
Pc
Block diagram
0
5
10
15
20
25
30
5
5,2 5,4 5,6 5,8
6
6,2 6,4 6,6 6,8
7
Frequency (GHz)
G
a
i
n

(
d
B
)
Main Characteristics
Tamb = +25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
5
5.8
7
GHz
Gmax
Maximum gain
25
dB
G
Gain control range
10
15
dB
Psat
Saturated output power
27
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHA5215a
5.8GHz Medium Power Amplifier
Ref. : DSCHA52150160 -08-Jun-00
2/12
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C
Symbol
Parameter
Test
Conditions
Min.
Typ.
Max
Unit
Fop
Operating frequency range
5
5.8
7
GHz
Glin
Linear gain (Gc=-5V)
25
dB
Gdr
Gain control dynamic range
10
15
dB
Gc
Gain control voltage
-5
0
V
Pout
Saturated output power
27
dBm
Sdet
Output power monitor sensitivity
-5
mV/mW
Vref
Reference monitor voltage
550
mV
RLin
Input return loss (full band) (2)
7
12
dB
RLout
Output return loss (2)
6
dB
Vd
Positive supply voltage (1)
9
V
Id
Positive supply current
330
400
mA
Vg
Negative supply voltage
-1.4
V
Ig
Negative supply current
15
mA
(1) Depending on the application a trade-off can be obtained between linearity and power
consumption by adjusting the positive supply voltage (from 6 to 9V).
(2) The return loss can be improved by using a simple matching network (available on request).
Absolute Maximum Ratings
(1)
Tamb = +25C
Symbol
Parameter
Values
Unit
Vd
Positive supply voltage
10
V
Vg
Negative supply voltage
-6 to 0 (3)
V
Gc
Gain control voltage
-6 to 0.6
Pin
Maximum peak input power overdrive (2)
20
dBm
Top
Operating temperature range
-50 to +70
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
(3) Choose Vg in order to have Id
400mA when Vd is applied
5.8 GHz Medium Power Amplifier
CHA5215a
Ref. : DSCHA52150160 -08-Jun-00
3/12
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = -5V
Freq.
GHz
S11
dB
S11
/
/
/
/
S12
dB
S12
/
/
/
/
S21
dB
S21
/
/
/
/
S22
dB
S22
/
/
/
/
4
-9.23
5.6
-47.73
162.4
0.33
-78.2
-8.28
105.5
4.1
-9.05
0.4
-48.42
142.3
2.86
-78.2
-7.72
90.6
4.2
-8.84
-5
-48.78
129.4
5.44
-89.7
--7.46
77.4
4.3
-8.65
-10.8
-50.4
113.1
7.93
-89.7
-7.22
-64.7
4.4
-8.44
-16.8
-50.72
101.3
10.36
-110.2
-6.96
52.6
4.5
-8.25
-23.2
-51.79
88.3
12.76
-110.2
-6.69
52.6
4.6
-8.07
-30.1
-51.93
73.9
15.1
-136.9
-6.38
-27.5
4.7
-7.93
-37.5
-52.56
59.8
17.38
-122.7
-6.1
13.8
4.8
-7.89
-45.4
-52.92
41.2
19.49
-171.3
-5.94
-0.17
4.9
-7.99
-53.7
-53.56
22.4
21.31
-153.1
-6.03
-15.9
5
-8.27
-61.5
-54.49
-0.2
22.75
146.5
-6.46
-30.7
5.1
-8.64
-68.7
-55.71
-22.4
23.74
168.2
-7.27
-44
5.2
-9.03
-74.9
-57.22
-45.7
24.35
102.9
-8.33
-54.2
5.3
-9.39
-80.9
-58.74
-69.8
24.69
124.4
-9.44
-61
5.4
-9.73
-86.6
-60.04
-93.3
24.83
63.8
-10.35
-64.5
5.5
-10.1
-92.4
-60.95
-119.4
24.88
82.7
-10.93
-66
5.6
-10.52
-97.9
-61.36
-144.1
24.86
29.1
-11.21
-66.8
5.7
-11
-103.1
-61.75
-168
24.77
46.1
-11.25
-67.8
5.8
-11.56
-107.6
-61.42
170.3
24.65
-2.4
-11.13
-68.9
5.9
-12.09
-11.1
-60.99
150.8
24.49
13
-10.98
-70.7
6
-12.62
-113.2
-60.57
134.4
24.33
-31
-10.74
-72.5
6.1
-13.05
-114.5
-60.34
117.6
24.19
-17.1
-10.54
-74.4
6.2
-13.21
-114.3
-59.89
105.9
24.09
-57.5
-10.35
-76.4
6.3
-13.14
-114.1
-59.38
93.5
24.03
-44.5
-10.15
-78.1
6.4
-12.77
-114.4
-58.47
82.1
23.98
-82.9
-9.92
-79.2
6.5
-12.18
-115.7
-57.61
70.1
24.02
-70.3
-9.63
-80.5
6.6
-11.48
-117.9
-56.81
59.1
24.09
-108.1
-9.27
-81.7
6.7
-10.65
-121.7
-55.59
44.2
24.2
-95.4
-8.79
-83.3
6.8
-9.76
-126.9
-55.19
31.3
24.37
-134.9
-8.35
-85.5
6.9
-8.9
-133.7
-54.39
17.7
24.52
-121.1
-7.86
-88.3
7
-8.03
-141.9
-53.67
0.7
24.65
-165.1
-7.4
-92
CHA5215a
5.8GHz Medium Power Amplifier
Ref. : DSCHA52150160 -08-Jun-00
4/12
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = 0V
Freq.
GHz
S11
dB
S11
/
/
/
/
S12
dB
S12
/
/
/
/
S21
dB
S21
/
/
/
/
S22
dB
S22
/
/
/
/
4
-22.97
169.9
-34.74
25.6
-6.22
-172.9
-9.34
98.1
4.1
-22.15
159
-36.83
7.2
-4.74
-179.4
-8.85
84.5
4.2
-21.67
149.3
-39.2
-7.2
-3.27
172
-8.7
72.1
4.3
-21.35
141.2
-41.02
-21.2
-1.91
162.4
-8.55
60.6
4.4
-21.16
133.9
-42.96
-32.2
-0.62
152
-8.42
49.6
4.5
-21.03
127.4
-44.55
-44.2
0.63
141.2
-8.26
38.7
4.6
-20.94
121.3
-46.11
-54.2
1.84
129.6
-8.04
27.7
4.7
-21
115.9
-47.53
-66.2
3.01
117.4
-7.8
16.4
4.8
-21.08
110.6
-48.79
-77.7
4.12
104.3
-7.56
4.8
4.9
-21.27
106.4
-50.14
-91.6
5.13
90.4
-7.39
-7.3
5
-21.5
102.4
-51.39
-105.3
5.99
75.7
-7.32
-19.6
5.1
-21.8
99.6
-52.81
-121.3
6.67
60.5
-7.43
-31.8
5.2
-22.06
97.1
-54.39
-139.6
7.14
45.1
-7.74
-43.2
5.3
-22.27
95.6
-55.86
-158.3
7.42
30.1
-8.24
-53.6
5.4
-22.47
94.1
-57.39
-177.5
7.55
15.9
-8.88
-62.2
5.5
-22.59
92.9
-58.53
161.5
7.58
2.6
-9.62
-69
5.6
-22.69
91.6
-59.33
140.9
7.57
-10
-10.38
-73.8
5.7
-22.8
90.4
-59.48
119.9
7.58
-21.7
-11.1
-76.7
5.8
-22.9
89
-59.27
101.7
7.62
-32.9
-11.7
-77.5
5.9
-23.14
88
58.76
84.8
7.72
-43.7
-12.14
-76.8
6
-23.38
86.6
-58.03
68.8
7.91
-54.2
-12.31
-74.7
6.1
-23.7
86.9
-57.17
53.3
8.19
-64.9
-12.23
-72.2
6.2
-24.15
87
-56.52
39.9
8.56
-75.9
-11.83
-69.4
6.3
-24.62
89.3
-55.51
27.7
9.02
-87.5
-11.16
-67.3
6.4
-25.03
94.1
-54.47
16
9.55
-100.1
-10.23
-66.4
6.5
-25.04
102.4
-53.41
1
10.1
-114.2
-9.15
-67.5
6.6
-24.31
110.2
-52.5
-14.7
10.6
-129.9
-8.02
-70.8
6.7
-22.84
115.5
-51.5
-30.3
10.89
-147.6
-7.02
-76.5
6.8
-21.18
115.4
-51.21
-50.7
10.83
-166.8
-6.33
-84.2
6.9
-19.83
111
-51.51
-68.5
10.31
173.9
-6.06
-92.3
7
-18.99
105.2
-51.88
-84.2
9.39
155.9
-6.14
-99.7
5.8 GHz Medium Power Amplifier
CHA5215a
Ref. : DSCHA52150160 -08-Jun-00
5/12
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Measurements
Bias Conditions : Vd = +5V, Id=330mA (Vg = -1.4V)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
7
Frequency (GHz)
Gain
(d
B)
Gmax
Gmin
-30
-25
-20
-15
-10
-5
0
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
7
Frequency (GHz)
Input
ret
urn lo
ss (
d
B)
Gmax
Gmin
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
7
Frequency (GHz)
O
u
t
put
ret
urn lo
ss (
d
B)
G max
G min