CHA6042
Ref. : DSCHA6042218 - 06-Aug.-02
1
/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1316GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6042 is a four-stage pHEMT HPA
MMIC designed for VSAT ground terminals
and other radio applications. The CHA6042
provides 32dBm nominal output power at
1dB gain compression over the 13-16GHz
frequency range, and 32dB small-signal
gain. This product will be available in chip
form.
Main Features
Frequency Range:
13-16GHz
Gain: 32dB
Output Power (P-1dB): 32dBm
Output TOI:
40dBm
Input Return Loss:
15dB
Output Return Loss:
13dB
Bias: 9V,
1A
Dimensions: 2.34 x 1.36 x 0.07mm
10
15
20
25
30
35
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
S.
S
.
G
A
IN
(
d
B
)
-25
-20
-15
-10
-5
0
RE
T
URN L
O
S
S
(d
B
)
GAIN (dB)
Output Return Loss (dB)
Input Return Loss (dB)
CHA6042
13-16GHz High Power Amplifier
Ref. : DSCHA6042218 - 06-Aug.-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Predicted Output Power at 1dB Gain Compression
Absolute Maximum Ratings
Tamb. = 25
C (1)
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Duration < 1 s
3. AuSn solder mount to CuW or CuMo carrier assumed
26
27
28
29
30
31
32
33
34
35
36
12
13
14
15
16
17
FREQUENCY (GHz)
O
U
T
P
UT
P
O
W
E
R (P
-1
dB) (dBm
)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
10.5
V
Ids
Drain bias current_small signal
1500
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Maximum Drain Gate voltage (Vd-Vg)
+12
V
Pin
Maximum peak input power overdrive (2)
+18
dBm
Ta
Operating Temperature Range (3)
-45 to +80
C
Tstg
Storage Temperature Range
-55 to +125
C
13-16GHz High Power Amplifier
CHA6042
Ref. : DSCHA6042218 - 06-Aug.-02
3
/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
RF
RF Out
Vd1
Vd2
Vd3
Vd4
Vg1
Vg2
Vg3
Vg4
Schematic
Typical Bias Conditions
Tamb. = 25
C
Symbol
Parameter
Values
Unit
Vd 1, 2, 3, 4
Drain bias voltage
9.0
V
Vg 1, 2, 3, 4
Gate bias voltage
-0.5
V
Idd
Total drain current
1000
mA
CHA6042
13-16GHz High Power Amplifier
Ref. : DSCHA6042218 - 06-Aug.-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
MMIC Outline & Bond Pads
Not to scale, dimensions are in millimeters
2.34
0.35
1.36
0.35
1
2
3
4
5
6
7
8
9
1
Bond Pad
Symbol
x-dim.
y-dim.
x-center
y-center
(um)
(um)
(um)
(um)
1
RF input
100
200
115
835
2
Vd1
100
100
305
1255
3
Vd2
100
100
470
1255
4
Vd3
150
100
1280
1255
5
Vd4
200
100
1775
1255
6
RF output
100
200
2235
785
7
Vg4
100
100
1630
105
8
Vg3
100
100
1310
105
9
Vg2
100
100
920
105
10
Vg1
100
100
525
105
Chip size : 2340m +/-35m x 1360m +/- 35m
13-16GHz High Power Amplifier
CHA6042
Ref. : DSCHA6042218 - 06-Aug.-02
5
/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
MMIC Assembly and Bonding Diagram ( not to scale )
VD1
VD2
VD3
VD4
R
F
O
U
R
F
IN
VG
VG
VG3
VG
V
g
100p
0.01
100p
V
D
100p
0.01
100p
50 Ohm line
50 Ohm line
RFin
RFout
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