CHU3277
Ref. DSCHU3277391 - 01 Apr 03
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Multi-function: Multiplier / MPA
GaAs Monolithic Microwave IC
Description
The CHU3277 is a W-band monolithic
multifunction, which integrates an input
buffer/power divider and two W-band chains in
parallel combined at the output. Each one
includes a frequency multiplier and a four-stages
medium power amplifier. The frequency
multipliers are based on active transistors and
allow operation at low input level with reduced
power consumption.
All the active devices are internally self-biased to
ease bias configuration. This chip is compatible
with automatic equipment for assembly.
The circuit is manufactured with the P-HEMT
process: 0.15m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
n
Wide operating frequency range
n
Low input power: 5dBm typical
n
High output power
n
Low AM noise
n
Wide temperature range
n
On-chip self biasing
W-band multifunction block-diagram
n
Very simple bias configuration
n
Low DC power consumption
n
Automatic assembly oriented
n
BCB layer protection
n
Chip size: 3.9 x 1.66 x 0.1mm
Main Typical Characteristics
Tamb = +25C
Symbol
Parameter
Min
Typ
Max
Unit
F_in
Input frequency
38
38.5
GHz
P_in
Input power
5
dBm
F_out
Output frequency
76
77
GHz
Pout
Output power
18
dBm
CHU3277
Ref. DSCHU3277391 - 01 Apr 03
2/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
CHU3277
W-band Multiplier/MPA
Ref. DSCHU3277391 - 01 Apr 03
3/7
Specifications subject to change without notice
Route Dpartementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: 33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Full operating temperature range, used according to section "Typical assembly and bias
configuration"
Symbol
Parameter
Min
Typ
Max
Unit
F_in
Input frequency
38
38.5
GHz
F_out
Output frequency
76
77
GHz
P_in
Input power
3
5
10
dBm
Pout
Output power (1)
15.5
18
20.5
dBm
Pout_Flat
Output power flatness
<1
dB
AM_noise
Amplitude noise @ 1kHz (SSB)
Amplitude noise @ 10kHz (SSB)
Amplitude noise @ 100kHz (SSB)
Amplitude noise @ 200kHz (SSB)
Amplitude noise @ 1MHz (SSB)
-137
-145
-151
-153
-157
-132
-140
-146
-148
-152
dBc/Hz
VSWR_in
VSWR at input port (50
)
2:1
2.5:1
+V
Positive supply voltage (2)
4.25
4.5
4.75
V
+I
Positive supply current
280
400
mA
-V
Negative supply voltage (2)
-4.75
-4.5
-4.25
V
-I
Negative supply current
8
12
mA
Top
Operating temperature range
-40
25
100
C
Tstg
Storage temperature range
-40
25
120
C
(1)Defined on load VSWR
1.5:1.
(2)Negative supply voltage must be applied at least 1us before positive supply voltage.
Absolute Maximum Ratings (3)
Symbol
Parameter
Values
Unit
P_in
Input power (4)
12
dBm
+V
Positive supply voltage
5
V
-V
Negative supply voltage
-5
V
+I
Positive supply current
450
mA
-I
Negative supply current
15
mA
Tstg
Storage temperature range
-55 to +155
C
(3) Operation of this device above anyone of these parameters may cause permanent damage.
(4) Duration < 1s.
CHU3277
W-band Multiplier/MPA
Ref. DSCHU3277391 - 01 Apr 03
4/7
Specifications subject to change w ithout notice
Route Dpartementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09
Chip Mechanical Data and Pin References
Units = m
Chip size = 3900 x 1660 35
Chip thickness = 100 10
HF Pads (2,8) = 90 x 110 (BCB opening)
DC Pads (4,5,6) = 100 x 100 (BCB opening)
Pin number
Pin name
Description
1,3,7,9
Ground: should not be bonded. If required, please
ask for more information.
6
GND
Ground (optional)
2
IN
Input port
8
OUT
Output port
5
+V
Positive supply voltage
4
-V
Negative supply voltage
CHU3277
W-band Multiplier/MPA
Ref. DSCHU3277391 - 01 Apr 03
5/7
Specifications subject to change without notice
Route Dpartementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: 33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Assembly and Bias Configuration
This drawing shows an example of assembly and bias configuration. All the transistors are
internally self-biased. An external capacitor is recommended for the positive and negative
supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25m) has to be
according to the following recommendation.
Port
Equivalent inductance
(nH)
Wire length (mm)
(1)
IN (2)
L_in = 0.27
0.34
OUT (8)
L_out = 0.27
0.34
(1) This value is the total length including the necessary loop from pad to pad.
For a microstrip configuration a hole in the substrate is necessary for chip assembly.
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