CHV2243
Ref. : DSCHV22431074 -15-Mar.-01
1/6
Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Fully Integrated Q-band VCO
based on Ku-band Oscillator and Q-band Multiplier
GaAs Monolithic Microwave IC
Description
The CHV2243 is a monolithic multifunction
for frequency generation. It integrates a
Ku-band oscillator with frequency control
(VCO), a Q-band frequency multiplier and
buffer amplifiers. The VCO is fully
integrated. On chip P-HEMT based
Schottky diode is used as varactor. All the
active devices are internally self biased.
The circuit is manufactured with the P-
HEMT process : 0.25m gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is available in chip form.
Main Features
n
Ku-band VCO + Q-band multiplier
n
Fully integrated VCO
n
Wide frequency tuning range
n
PLL
oriented
n
Auxiliary output at VCO frequency
n
High temperature range
n
On-chip self biasing
n
Automatic assembly oriented
n
Chip size 2.41 x 1.18 x 0.1 mm
(F_out)
F_VCO = F_out/3
x3
RF_out
V_tune
+V
-V
VCO_out_aux
Multifunction block diagram
36,5
37
37,5
38
38,5
39
39,5
40
0
0,5
1
1,5
2
Tuning voltage (V)
Out
put
f
r
e
que
nc
y
(
G
H
z
)
Typical tuning characteristic
Main Characteristics
Tamb = +25C
Symbol
Parameter
Min
Typ
Max
Unit
F_out
Output centre frequency
38
38.25
38.5
GHz
F_vco
Oscillator frequency
F_out/3
F_tune1
Output frequency tuning range
1.5
3
GHz
Pout
Output power
5
7
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHV2243
Q-band VCO
Ref. : DSCHV22431074 -15-Mar.-01
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Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Full temperature range, used according to section "Typical assembly and bias configuration"
Symbol
Parameter
Min
Typ
Max
Unit
F_out
Output centre frequency
38
38.25
38.5
GHz
F_vco
VCO frequency
F_out/3
F_tune1
Maximum frequency tuning range (@ F_out)
1.5
3
4
GHz
F_tune2
Specified frequency tuning range (@ F_out)
(1)
200
300
500
MHz
F_tune2(T)
Maximum variation of Frequency over
temperature (2)
-300
+300
MHz
P_out
Output power on RF_out port
5
7
12
dBm
H1
Sub-harmonics rejection (Fout/3) (2)
-16
-11
dBc
H2
Sub-harmonics rejection (2*Fout/3) (2)
-17
-12
dBc
P_VCO
VCO output power on VCO_out_aux port (4)
tbd
V_tune
Control voltage range
0.5-1
0 - 2
V
F_slope
Frequency tuning slope (2)
1000
2800
4500
MHz/v
F_slope(T)
Maximum variation of Frequency tuning
slope over temperature (2)
-26
+34
%
P_V+
Frequency pushing vs positive supply
voltage (2)
150
450
MHz/v
P_V-
Frequency pushing vs negative supply
voltage (2)
80
250
MHz/v
PN
Phase noise (given at F_out) (2)
@ 1kHz
@ 10kHz
@ 100kHz
@ 200kHz
@ 1MHz
-5
-35
-65
-73
-92
+5
-25
-55
-63
-82
dBc/Hz
+V
Positive supply voltage (3)
4.4
4.5
4.6
V
+I
Positive supply current
130
180
mA
-V
Negative supply voltage (3)
-4.6
-4.5
-4.4
V
-I
Negative supply current
4
8
mA
Top
Operating temperature range
-40
+100
C
(1) F_tune2 is the frequency tuning range relative to the specified parameters, this
frequency tuning range has to be inside 38 to 38.5GHz.
(2) Specified within F_tune2
(3) Negative supply voltage must be applied at least 1s before positive supply
voltage
(4) This output is optional, it can be not connected
Q-band VCO
CHV2243
Ref. : DSCHV22431074 -15-Mar.-01
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Unit
V_tune
Tuning voltage
2.5
V
+V
Positive supply voltage
5
V
-V
Negative supply voltage
-5
V
+I
Positive supply current
250
mA
-I
Negative supply current
15
mA
Tstg
Storage temperature range
-55 to +155
C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
CHV2243
Q-band VCO
Ref. : DSCHV22431074 -15-Mar.-01
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Mechanical Data and Pin References
Origin 0,0
Layout 2410X1110
1
2
3
4
5
6
7
8
9
10
11
15
12
13
14
200
10
40
70
1440
350
500
650
800
950
1100
1250
1550
1850
2150
2355
61
5
Unit = m
External chip size (including saw streets) = 2480 x 1180 +/- 35
Chip thickness = 100 +/- 10
HF Pads (13) = 68 x 118
VCO_out_aux Pad = 100 x 100
DC/IF Pads = 100 x 100
Pin number
Pin name
Description
12, 14
Ground: should not be bonded. If required,
please ask for more information.
3
Ground (optional)
13
RF_out
RF output port @38GHz
8, 10
+V
Positive supply voltage
5, 9
-V
Negative supply voltage
4, 6, 7, 11
NC
1, 2
V-tune
Tuning voltage input ports (should be connected
together, see typical assembly and bias
configuration)
15
VCO_out_aux Auxiliary VCO output at 12.7GHz (F_out / 3) (optional)
Q-band VCO
CHV2243
Ref. : DSCHV22431074 -15-Mar.-01
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Assembly and Bias Configuration
1
2
3
4
5
6
7
8
9
10
11
15
12
13
14
L_aux
-strip line
L_out
-strip line
-V
+V
V-tune
DC and control lines
>= 120pF
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The positive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table.
For the RF pads the equivalent wire bonding inductance (diameter=25m) has to
be according to the following recommendation.
Port
Equivalent inductance
(nH)
Approximated wire
length (mm)
RF_out (13)
L_out = 0.28
0.35
VCO_out_aux (15)
L_aux = 0.4
0.5
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
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