TO-46 PACKAGE
NPN PHOTOTRANSISTOR
MID-40A22
Description
Package Dimensions
The MID-40A22 is a NPN silicon phototransistor mounted
in a lensed, special dark plastic package. The lensing effect
of the package allows an acceptance angle of 25 that
measured from the optical axis to the half power point .
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
Acceptance angle : 25
l
Good spectral matching IRED (
p 940 nm) type
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
12/4/2000
Unity Opto Technology Co., Ltd.
Unit : mm ( inches )
0.50 TYP
(.020)
5.46
(.215)
2.54
(.100)
4.75
(.187)
1.00MIN
(.039)
25.00MIN
(.984 )
5.80
(.228)
E
C
COLLECTOR
INDICATOR
45
0.70
(.028)
Notes :
1. All dimensions are in inches (millimeters).
2. Tolerance is .010" (0.25 mm) unless otherwise noted.
3. Protruded resin under flange is .059" (1.5mm) max.
4. Lead spacing is measured where the leads emerge from the package.
5. Specifications are subject to change without notice.
MID-40A22
Optical-Electrical Characteristics
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Collector-Emitter
I
c
=0.1mA
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=0.1mA
Breakdown Voltage
Ee=0
Collector-Emitter
I
c
=0.5mA
Saturation Voltage
Ee=0.1mW/cm
2
Rise Time
V
cc
=5V, R
L
=1K
Tr
15
Fall Time
I
C
=1mA
Tf
15
Collector Dark
V
CE
=10V
Current
Ee=0
On State Collector
V
CE
=5V
Current
Ee=0.1mW/cm
2
Typical Optical-Electrical Characteristic Curves
12/4/2000
nA
100
@ T
A
=25
o
C
I
C(ON)
1
V
CE(SAT)
0.4
V
12/04/2000
S
I
CEO
mA
V
(BR)CEO
V
V
30
5
V
(BR)ECO
0
1
2
3
4
5
0
1
2
3
4
5
6
0.001
0.01
0.1
1
10
100
1000
0
40
80
120
Unity Opto Technology Co., Ltd.
Ee - Irradiance - mW/cm
2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
0
40
80
120
160
200
0
2
4
6
8
10
Iceo-Collector Dark Current -
A
T
A
- Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
0
0.5
1
1.5
2
2.5
3
3.5
4
-75
-25
25
75
125
R
L
- Load Resistance - K
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
I
C
Normalized Collector Current
Tr Tf Rise and Fall Time -
S
Relative Collector Current
1.0
0.9
0.8
FIG.5 SENSITIVITY DIAGRAM
Relative Sensitivity
0 10 20
0.5
0.3
0.1
0.2
0.4
0.6
30
40
90
70
60
50
80
Vce = 5 V
Vce =5 V
Ee =0.1 mW/cm
2
@
= 940 nm
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
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