AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-534A4
Description
Package Dimensions
The MIE-534A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intensity
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (
5mm ) package, radiant angle : 30
l
Peak wavelength
p
= 940 nm
l
Good spectral matching to si-photodetector
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10
s pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
11/20/2000
@ T
A
=25
o
C
Notes :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
@ T
A
=25
o
C
Unit: mm ( inches )
Unity Opto Technology Co., Ltd.
A
C
5.05
(.199)
2.54 NOM.
(.100)
7.62
(.300)
1.00
(.039)
0.50 TYP.
(.020)
23.40 MIN.
(.921)
1.00MIN.
(.039)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
SEE NOTE 2
MIE-534A4
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Intensity
I
F
=20mA
Ie
2.0
3.5
mW/sr
Forward Voltage
I
F
=50mA
V
F
1.30
1.5
V
Reverse Current
V
R
=5V
I
R
100
A
Peak Wavelength
I
F
=20mA
940
nm
Spectral Bandwidth
I
F
=20mA
50
nm
View Angle
I
F
=20mA
2
1/2
30
deg .
Typical Optical-Electrical Characteristic Curves
11/20/2000
Unity Opto Technology Co., Ltd.
0
0.5
1
840
940
1040
FIG.1 SPECTRAL DISTRIBUTION
Wavelength (nm)
Relative Radiant Intensity
0
20
40
60
80
100
0.8
1.2
1.6
2.0
2.4
2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
Forward Current (mA)
0
0.5
1
1.5
2
2.5
3
-40
-20
0
20
40
60
Ambient Temperature T
A
(
o
C)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Output Power To Value
I
=20mA
-55 -25
0
25
50
75 100 125
100
0
50
60
70
80
90
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
Forward Current I
F
(mA)
0
1
2
3
4
5
0
20
40
60
80
100
Output Power Relative To
Value at I
F
=20mA
Relative Radiant Intensity
1.0
0.9
0.8
0 10 20
FIG.6 RADIANTION DIAGRAM
0.5 0.3 0.1 0.2 0.4 0.6
30
90
70
60
50
80
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
40
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