SUBMINIATURE
PHOTOINTERRUPTER
MIR-3301
Description
Package Dimensions
The MIR-3301 consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
Features
l
Compact and thin
l
MIR-3301 : Compact DIP, long lead type
l
Optimum detecting diatance : 0.8 - 1.0 mm
l
Wavelength : 940nm
l
Visible light cut-off type
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Symbol
Minimum Rating Maximum Rating
Unit
Continuous Forward Current
I
F
50
mA
INPUT
Reverse Voltage
V
R
5
V
Power Dissipation
P
ad
75
mW
Collector-emitter breakdown voltage
V
(BR)CEO
30
V
OUTPUT Emitter-Collector breakdown voltage
V
(BR)ECO
5
V
Collector power dissipation
P
C
75
mW
Total power dissipation
P
TOT
100
mW
Operating Temperature Range
T
opr
-25
o
C
to + 85
o
C
Storage Temperature Range
T
stg
-40
o
C
to + 100
o
C
02/04/2002
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260
o
C
Unity Opto Technology Co., Ltd.
Unit: mm
2.750.2
1.50.2
4.0
0.15
101.0
0.65
0.50.1
15
B
A
D
C
A
C
B
D
1.80
3.40.2
( Emitter center )
( Detector center )
15
0~20
0~20
MIR-3301
Optical-Electrical Characteristics
Parameter
Min .
Typ .
Max .
Unit .
Test Conditions
Input
Forward Voltage
-
1.2
1.4
V
I
F
=20mA
Reverse Current
-
-
10
A
V
R
=5V
Output
Collector Dark Current
-
-
100
nA
Vce=10V
B
38
-
75
C
56
-
108
D
80
-
151
E
112
-
216
Response Time (RISE)
-
20
100
S
I
c
=100
A,Vce=2V
Response Time (FALL)
-
20
100
S
R
L
=1K,d=1mm
*2
Leak Current
-
-
0.1
A
I
F
=4mA,Vce=5V
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING .
*2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Typical Optical-Electrical Characteristic Curves
02/04/2002
t
f
I
LEAK
*1
Collector Current
I
F
=4mA,Vce=5V
Ic
t
r
A
Symbol
V
F
I
R
Iceo
Unity Opto Technology Co., Ltd.
Transfer Cha-
racteristics
Device
Al refletive
2 mm-thick glass
0
20
40
60
80
100
120
-25
0
25
50
75
100
Ambient Temperature T
A
(
o
C
)
Fig.1 forward Current
VS
.
Ambient Temperature
Forward Current I
F
(mA)
Ambient Temperature T
A
(
o
C
)
Fig.2 Power Dissipation vs.
Ambient Temperature
Power Dissipation (mW)
P
TOT
P
ad
, P
C
0
10
20
30
40
50
60
-25
0
25
50
75
100
Collector Current Ic (
A)
0
100
200
300
400
500
600
0
5
10
15
20
Vce=5V
Ta=25
o
C
Forward Current I
F
(mA)
Forward Current I
F
(mA)
Fig.4 Collector Current vs.
Forward Current
0
10
20
30
40
50
0
0.5
1
1.5
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
MIR-3301
Typical Optical-Electrical Characteristic Curves
Test Circuit for Response Time
02/04/2002
Unity Opto Technology Co., Ltd.
10%
t
s
t
r
Input
Output
t
d
t
f
Output
R
L
Input R
D
90%
Vcc
0
50
100
150
200
250
300
350
0
2
4
6
8
10
12
Collector Current Ic (
A)
Ta=25
o
C
I
F
=10mA
4mA
1mA
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
0
20
40
60
80
100
120
-25
0
25
50
75
100
Relative Collector Current (%)
Ambient Temperature T
A
(
o
C
)
Fig.6 Relative Collector Current
VS
.
0
25
50
75
100
Collector Dark Current I
CEO
Ambient Temperature T
A
(
o
C
)
Fig.7 Collector Dark Current vs.
Ambient Temperature
V
CE
=10V
Response Time (
s)
Load Resistance R
t
(K
)
Fig.8 Response Time vs.
Load Resistance
10
-6
10
-7
10
-8
10
-9
10
-10
Relative Collector Current (%)
0
20
40
60
80
100
700
800
900
1000
1100
1200
Relative Sensitivity (%)
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Ta=25
o
C
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
9 10
I
F
=4mA
V
CE
=5V
T
A
=25
o
C
Distance (mm)
Fig.10 Relative Collector Current vs. Distance
between MIR-3301 and Card
0.1
1
10
100
0.01
0.1
1
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
50
20
5
2
0.5
0.2
V
CE
=2V
I
C
=100A
T
a
=25
o
C
t
r
t
r
t
d
t
s
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