SLOTTED
PHOTOINTERRUPTER
MIT-5A116-U
Description
Package Dimensions
The MIT-5A116-U consists of a Gallium Arsenide
infrared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing . It is a trans-
missive subminiature photointerrupter.
Features
l
Non -contact switching
l
For- direct pc board
l
Dual - in - line socket mounting
l
Fast switching speed
l
Choice of mounting configuration.
NOTE
1. Tolerance is 0.25 mm (.006") unless otherwise noted.
Absolute Maximum Ratings
@T
A
=25
o
C
Parameter
Symbol
Maximum Rating
Unit
Continuous Forward Current
I
F
50
mA
INPUT
Reverse Voltage
V
R
5
V
Power Dissipation
P
ad
75
mW
Collector-emitter breakdown voltage
V
(BR)CEO
30
V
OUTPUT Emitter-Collector breakdown voltage
V
(BR)ECO
5
V
Collector power dissipation
P
C
75
mW
Total power dissipation
P
TOT
mW
Operating Temperature Range
T
opr
-25
o
C
to + 85
o
C
Storage Temperature Range
T
stg
-40
o
C
to + 100
o
C
04/01/2002
100
Unity Opto Technology Co., Ltd.
0.50TYP
0.70 (.027)
6.60 0.10
9.00 0.30
0.50 0.10
14.00(.551)
(.038.004)
7.50
0.30
(.295
.012)
6.00
0.10
(.236
.004)
5.00 0.20
(.197.008)
4
3
2.50(.098)
10.00(.394)
0.70(.028)
10.00MIN
(.394)
(.406.012)
1.00(.040) MIN
2.35 0.10
6.00
(.236)
5.20
0.10
2-
0.70
0.10
(.260.004)
(.028004)
(.205
.004)
A
A'
(.020)
3.70
0.20
2.54 NOM
A-A' SECTION
(.146
.008)
(.020.004)
(.100)
B
B'
1.50(.059)
0.50 0.10
2.54
B-B' SECTION
(.020.004)
(.100)
5.20(.205)
0.90
(.035)
1.70
(.067)
1
2
MIT-5A116-U
Optical-Electrical Characteristics
@T
A
=25
o
C
Parameter
symbol
Min.
Typ.
Max.
Unit.
Test Conditions
Input
Forward Voltage
V
F
-
1.2
1.4
V
I
F
=20mA
Reverse Current
I
R
-
-
10
A V
R
=5V
Output
Collector Dark Current
Iceo
-
-
100
nA
Vce =10V
V
CE(SAT)
-
-
0.4
V
Ic=0.1mA,Ee=0.1mW/cm
2
Collector Current
Ic (on)
0.4
-
4
mA
I
F
=20mA, Vce =5V
Transfer Cha- Response Time (RISE)
t
r
-
20
100
S Ic=100
A, Vce =5V
racteristics
Response Time (FALL)
t
f
-
20
100
S R
L
=1k, d =1mm
Typical Optical-Electrical Characteristic Curves
04/01/2002
Collector Emitter Saturation Voltage
Unity Opto Technology Co., Ltd.
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
0
20
40
60
80
100
120
-25
0
25
50
75
100
Ambient Temperature T
A
(
o
C )
Fig.2 Power Dissipation vs
Ambient Temperature
Power Dissipation (mW)
P
TOT
P
D
, P
C
Collector Current Ic (
A)
Vce=2V
Ta=25
o
C
Forward Current I
F
(mA)
Fig.4 Collector Current vs
Forward Voltage
0
10
20
30
40
50
60
-25
0
25
50
75
100
Ambient Temperature T
A
Fig.1 forward Current
VS
.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature T
A
(
o
C )
Fig.6 Relative Collector Current
VS
. T
A
Forward Current I
F
(mA)
Forward Current I
F
(mA)
0
100
200
300
400
500
600
700
0
2
4
6
8
10
12
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
Ta=25
o
C
Collector Current Ic (
A)
I
F
=15mA
10mA
4mA
20mA
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
0
20
40
60
80
100
0.8
1.2
1.6
2.0
2.4
2.8
0
20
40
60
80
100
120
-25
0
25
50
75
100
MIT-5A116-U
Typical Optical-Electrical Characteristic Curves
4
Response Time Measurement Circuit
Sensing Position Characteristics
(Typical)
(Center of optical axis)
04/01/2002
0
20
40
60
80
100
700
800
900
1000
1100
1200
0
25
50
75
100
0.1
1
10
100
1000
0.01
0.1
1
10
100
10
-6
10
-7
10
-8
10
-9
10
-10
V
CE
=20V
Response Time (
s)
Load Resistance R
t
(K
)
Fig.8 Response Time vs.
Load Resistance
Collector Dark Current I
CEO
Unity Opto Technology Co., Ltd.
Relative Sensitivity (%)
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Ambient Temperature T
A
(
o
C )
Fig.7 Collector Dark Current vs.
Ambient Temperature
Ta=25
o
C
Input
Output
90 %
10 %
tr
tf
t
t
0
50
100
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
Relative light current I
L
(%)
Distance d (mm)
Y
X
0
+
0
+
Y
X
I
F
=20mA
V
CE
=5V
Ta=25
o
C
I
F
=20mA
V
CE
=5V
Ta=25
o
C
V
CE
=2V
I
C
=100mA
Ta=25
o
C
IL
Input
V
CC
Output
VR
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