Symbol
Conditions
Values
I
T(AV)
Half wave resistive load T
C
= 60 C
1511 A
I
TSM
T
VJ
= 125 C; 10 ms half sine, V
R
=50% V
RRM
21 K. A.
T
VJ
= 125 C; 10 ms half sine, V
R
=0
26.25 K.A.
I
2
T
T
VJ
= 125 C; 10 ms half sine, V
R
=50% V
RRM
2210000 A
2
s
T
VJ
= 125 C; 10 ms half sine, V
R
=0
3440000 A
2
s
I
GT
T
VJ
= 25 C; V
DRM
= 5V
200 mA
V
GT
T
VJ
= 25 C; V
DRM
= 5V
3.5 V
dv/dt
T
VJ
= 125 C; Voltage = 67% V
DRM
*200 V/S
[di/dt]
CR
Repetitive 50 Hz
500 A/S
V
T
T
VJ
= 25 C; I
T
= 2900 A
1.50 V max
V
o
T
VJ
= 125 C
0.86 V
R
o
T
VJ
= 125 C
0.25 m
I
RRM
/I
DRM
T
VJ
= 130 C
100 mA
I
H
T
VJ
= 25 C; R
6-K
=
230 mA
I
L
T
VJ
= 25 C; V
D
= 5V
350 mA
R
th(i-c)
dc
0.022 C/W
R
th(i-h)
0.004 C/W
T
VJ
125 C
T
STG
-40 to + 125 C
Mounting Force
20-22 KN
Case outline
F
Thyristors
DCR1003
Technica l Da ta
Typical applications : D.C. Motor control, Controlled rectifiers, High power drives.
Type No.
V
RRM
V
RSM
(Volts)
(Volts)
DCR1003/06
600
700
DCR1003/08
800
900
DCR1003/10
1000
1100
DCR1003/12
1200
1300
DCR1003/14
1400
1500
DCR1003/16
1600
1700
DCR1003/18
1800
1900
F ea tures
Double side cooling.
Voltage grade upto 1800V.
Weight 500gm (Approx.)
* Higher dv/dt selection available.
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