UTC 2SC2328A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R211-008,A
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SA928A
TO-92NL
1
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
30 V
Collector-emitter voltage
V
CEO
30 V
Emitter-base voltage
V
EBO
5 V
Collector dissipation
Pc
1
W
Collector current
Ic
2
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BV
CBO
Ic=100
A,I
E
=0
30
V
Collector-emitter breakdown voltage
BV
CEO
Ic=10mA,I
B
=0 30
V
Emitter-base breakdown voltage
BV
EBO
I
E
=1mA,Ic=0 5
V
Collector cut-off current
I
CBO
V
CB
=30V,I
E
=0
100
nA
Emitter cut-off current
I
EBO
V
BE
=5V,Ic=0
100
nA
DC current gain(note)
h
FE
V
CE
=2V,Ic=500mA 100
320
Base-emitter on voltage
V
BE
(on) V
CE
=2V,Ic=500mA
1
V
Collector-emitter saturation voltage
V
CE
(sat) Ic=1.5A,I
B
=0.03A
2
V
Output capacitace
Cob
V
CB
=10V, I
E
=0,f=1MHz
30
pF
Current gain bandwidth product
f
T
V
CE
=2V,Ic=500mA
120
MHz
CLASSIFICATION OF hFE
RANK O
Y
RANGE 100-200 160-320
UTC 2SC2328A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R211-008,A
TYPICAL CHARACTERISTIC CURVES
0
2
4
6
8
10
12
14
16
0
200
400
600
800
1000
1200
1400
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
I
C
(
m
A)
,COL
L
E
CT
OR CURRENT
FIG.1 STATIC CHARACTERISTIC
0 0.2
0.4
0.6
0.8
1.0
1.2
0
200
400
600
800
1000
1200
1400
V
BE
(V),BASE-EMITTER VOLTAGE
I
C
(
m
A)
,COL
L
E
CT
OR CURRENT
FIG.2 BASE-EMITTER ON VLOTAGE
1.4
V
CE
=2V
1
3
10
30 100 300 1000
3000
10
30
50
100
300
500
1000
Ic(mA),COLLECTOR CURRENT
h
F
E DC CURRENT
GAIN
FIG.3 DC CURRENT GAIN
V
CE
=2V
1
3
10
30 100 300 1000
3000
0.01
0.03
0.05
0.1
0.3
0.5
1
Ic(mA),COLLECTOR CURRENT
V
CE
(s
at)(V
),S
A
TU
R
A
TIO
N
V
O
LTA
G
E
FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE
Ic=50l
B
Ta=25C
3
0
20
40
60
80 100 120 140
160
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta(C),AMBIENT TEMPERATURE
P
D
(W
),P
O
W
E
R
D
I
S
S
IP
A
T
ION
FIG.5 POWER DERATING
0.3
0.01
V
CE
(V), COLLECTOR EMITTER VOLTAGE
I
D
(
m
A)
,COL
L
E
CT
OR CURRENT
FIG.6 SAFE OPERATING AREA
0.5
1
0.1
3
5
10
30
0.03
0.05
0.1
0.3
0.5
1
3
5
50 100
Ic(MAX)
Ic(MAX) PULSE
Ta=25C
D.C
OPERATION
1s
1ms
V
CEO
MAX
PDF 
ZIP