UTC 2N2955
SILICON PNP TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R205-004,A
SILICON PNP TRANSISTORS
The UTC 2N2955 is a silicon PNP transistor in TO-3
metal case. It is intended for power switching circuits,
series and shunt regulators, output stages and high fidelity
amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETERS SYMBOL
VALUE
UNITS
Collector-Base Voltage
V
CBO
100 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
7 V
Collector-Emitter Voltage
V
CEV
70 V
Collector Current
Ic
15
A
Collector Peak Current(1)
I
CM
15 A
Base Current
I
B
7
A
Base Peak Current(1)
I
BM
15 A
Total Dissipation at Ta=25
C
P
tot
115 W
Storage Temperature
T
STG
-65 to 200
C
Max. Operating Junction Temperature
Tj
200
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
V
CEO
(sus)
Ic=200mA, I
B
=0V 60
V
Collector-Emitter Sustaining Voltage V
CER
(sus)
Ic=0.2 A, R
BE
=100 Ohms
70
V
Collector Cut-off Current
I
CEO
V
CE
=30V,IB=0
0.7
mA
Collector Cut-off Current
I
CEX
V
CE
=100V,V
BE
(off)=1.5V.
V
CE
=100V,V
BE
(off)=1.5V,
Ta=150
C
1.0
5.0
mA
Emitter Cut-off Current
I
EBO
V
BE
=7V,I
C
=0
5.0
mA
ON CHARACTERISTICS
DC Current Gain(note)
h
FE
Ic=4A,V
CE
=4V,
Ic=10A,V
CE
=4V
20
5
70
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=4A,I
B
=400mA
Ic=10A,I
B
=3.3A
1.1
3.0
V
UTC 2N2955
SILICON PNP TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R205-004,A
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Base-Emitter On Voltage
V
BE
(on) Ic=4A,V
CE
=4V
1.5
V
SECOND BREAKDOWN
Second Breakdown Collector with
Base Forward Biased
Is/b V
CE
=60V,T=1.0s, Non-repetitive 2.87
A
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
fT
Ic=0.5A,V
CE
=10V,f=1MHz 2.5
MHz
Small-Signal Current Gain
hFE
Ic=1A,V
CE
=4V,f=1kHz 15
120
Small-Signal Current Gain
Cut-off Frequency
fHFE Ic=1A,V
CE
=4V
F=1.0kHz
10
kHz
Note(1):Pulse Test: Puls Width<=300
s, Duty Cycle<=2%
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