UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-040,A
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1
A to 50mA.
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
MAXIMUM RATINGS
(TA=25
C, unless otherwise noted)
RATING SYMBOL
2N5088
2N5089
UNIT
Collector-Emitter voltage
V
CEO
30
25 V
Collector-Base voltage
V
CBO
35
30 V
Emitter-base voltage
V
EBO
4.5 V
Collector current-continuous
Ic
100
mA
Operating and Storage
Junction Temperature Range
T
j,
T
stg
-55 ~ +150
C
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS
(TA=25
C, unless otherwise noted)
PARAMETER SYMBOL
MAX
UNIT
Total Device Dissipation
Derate above 25
C
P
D
625
5
mW
mW/
C
Thermal Resistance, Junction to Case
R
JC
83.3
C/W
Thermal Resistance, Junction to
Ambient
R
JA
200
C/W
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-040,A
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise noted)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(note)
2N5088
2N5089
V
(BR)CEO
I
C
=1.0mA, I
B
=0
30
25
V
V
Collector-Base Breakdown Voltage
2N5088
2N5089
V
(BR)CBO
I
C
=100
A, I
E
=0
35
30
V
V
Collector Cut-Off Current
2N5088
2N5089
I
CBO
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
50
50
nA
nA
Emitter Cutoff Current
I
EBO
V
EB
=3.0V, I
C
=0
V
EB
=4.5V, I
C
=0
50
100
nA
nA
ON CHARACTERISTICS
DC Current Gain
h
FE
V
CE
=5.0V, I
C
=100
A 2N5088
2N5089
V
CE
=5.0V, I
C
=1.0mA 2N5088
2N5089
V
CE
=5.0V, I
C
=10mA 2N5088
(NOTE) 2N5089
300
400
350
450
300
400
900
1200
Collector-Emitter Saturation Voltage
V
CE
(sat) I
C
=10mA, I
B
=1.0mA
0.5 V
Base-Emitter On Voltage
V
BE
(on)
I
C
=10mA, V
CE
=5.0V
0.8 V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
V
CE
=5.0mA, Ic=500
A, f=20MHz
50
MHz
Collector-Base Capacitance
Ccb
V
CB
=5.0V, I
E
=0, f=100kHz
4
pF
Emitter-Base Capacitance
Ceb
V
EB
=0.5V, Ic=0, f=100kHz
10
pF
Small-Signal Current Gain
2N5088
2N5089
h
FE
V
CE
=5.0V, Ic=1.0mA, f=1.0kHz
350
450
1400
1800
Noise Figure
2N5088
2N5089
NF V
CE
=5.0V, Ic=100
A, R
s
=10k
,
f=10KHz to 15.7kHz
3.0
2.0
dB
dB
Note: Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R201-040,A
TYPICAL CHARACTERISTICS
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R201-040,A
UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R201-040,A
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