UTC 2SB562
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-004,A
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
*Low frequency power amplifier
*Complement to 2SD468
TO-92NL
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-25 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
Ic
-1
A
Collector Peak Current
Ic(peak)
-1.5
A
Collector Power Dissipation
P
C
0.9
W
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector to base breakdown voltage
V
(BR)CBO
Ic=-10
A, I
E
=0
-25
V
Collector to emitter breakdown
voltage
V
(BR)CEO
Ic=-1mA, R
BE
=
-20
V
Emitter to base breakdown voltage
V
(BR)EBO
I
E
=-10
A, I
C
=0
-5
V
Collector Cut-Off Current
I
CBO
V
CB
=-20V, I
E
=0
-1
A
DC Current transfer ratio
h
FE
V
CE
=-2V, Ic=-0.5A (note)
85
240
Collector to emitter saturation
voltage
V
CE
(sat) Ic=-0.8A,
I
B
=-0.08A (note)
-0.2
-0.5
V
Base to emitter voltage
V
BE
V
CE
=-2V, Ic=-0.5A (note)
-0.8
-1.0
V
Gain bandwidth product
f
T
V
CE
=-2V, Ic=-0.5A (note)
350
MHz
Collector output capacitance
Cob
V
CB
=-10V, I
E
=0, f=1MHz
38
pF
Note 1:Pulse test
UTC 2SB562
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R211-004,A
CLASSIFICATION OF h
FE
RANK B C
RANGE
85 - 170
120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
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