UTC 2SC945
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-005,A
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
*Collector-Emitter voltage:
BV
CBO
=50V
*Collector current up to 150mA
*High hFE linearity
*Complimentary to 2SA733
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Dissipation(Ta=25
C
)
Pc 250
mW
Collector Current
Ic
150
mA
Base Current
I
B
50
mA
Junction Temperature
T
j
125
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=100
A, I
E
=0
60
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=10mA,I
B
=0 50
V
Collector Cut-Off Current
I
CBO
V
CB
=40V,I
E
=0
100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=3V,Ic=0
100
nA
DC Current Gain(note)
h
FE
V
CE
=6V,Ic=1mA
70
700
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=100mA,I
B
=10mA
0.1
0.3
V
Current Gain Bandwidth Product
f
T
V
CE
=10V,Ic=50mA 100
190
MHz
Output Capacitance
Cob
V
CB
=10V,I
E
=0,f=1MHz
2.0
3.0
pF
Noise Figure
NF
Ic=-0.1mA,V
CE
=6V
R
G
=10k
,f=100Hz
4.0
6.0 dB
UTC 2SC945
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-005,A
CLASSIFICATION OF hFE
RANK O G Y
L
RANGE 70-140 200-400 120-240 350-700
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic
,Col
l
e
c
t
or
c
u
r
r
ent (
m
A
)
0
4
8
12
16
20
0
20
40
60
80
100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, DC c
u
r
r
ent G
a
i
n
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
V
CE
=6V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic
,Col
l
e
c
t
or
c
u
r
r
ent (
m
A
)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=6V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
S
a
tur
a
ti
on v
o
l
t
age (
M
V
)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Cur
r
ent G
a
i
n
-
bandwi
d
th
pr
oduc
t,f
T
(MH
z
)
10
0
10
1
10
2
V
CE
=6V
Collector-Base voltage (V)
Cob,Capac
i
t
anc
e (
p
F
)
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
I
E
=0
I
B
=50
A
I
B
=100
A
I
B
=150
A
I
B
=200
A
I
B
=250
A
I
B
=300
A
10
-1
10
-1
PDF 
ZIP