UTC 2SD1060
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-016,B
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
FEATURE
*Low collector-to-emitter saturation voltage:
V
CE(sat
)=0.4V max/I
C
=3A, I
B
=0.3A
APPLICATIONS
*Suitable for relay drivers, high-speed inverter, converters,
and other general large-current switching.
TO-220
1
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C)
PARAMETER SYMBOL VALUE UNIT
Collector to Base Voltage
V
CBO
60 V
Collector to Emitter Voltage
V
CEO
50 V
Emitter to Base Voltage
V
EBO
6 V
Collector Current
IC
5
A
Collector Current (Pulse)
I
CP
9 A
Collector Dissipation (Tc=25
C) P
C
30 W
Junction Temperature
Tj
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL
CHARACTERISTICS
(Ta=25
C)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-Off Current
I
CBO
V
CB
=40V,I
E
=0
0.1
mA
Emitter Cut-Off Current
I
EBO
V
EB
=4V,I
C
=0
0.1
mA
DC Current Gain
hFE1
hFE2
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=3A,
70
30
360
Gain bandwidth product
fT
V
CE
=5V, I
C
=1A
30
MHZ
Output Capacitance
Cob
V
CB
=10V, f=1MHz
100
pF
Collector-to-Emitter Saturation Voltage
V
CE
(sat) I
C
=3A, I
B
=0.3A
0.4
V
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
=1mA, I
E
=0
60
V
Collector-to-Emitter Breakdown
Voltage
V
(BR)CEO
I
C
=1mA, R
BE
=
50 V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
C
=0, I
E
=1mA
6
V
Turn-ON Time
t
ON
See specified test circuit
0.1
s
Storage Time
tstg
See specified test circuit
1.4
s
Fall Time
tf
See specified test circuit
0.2
s
UTC 2SD1060
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-016,B
CLASSIFICATION of hFE1
RANK Q R S
RANGE 70-140 100-200 180-360
SWITCHING TIME TEST CIRCUIT
PDF 
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