Reverse Voltage 35 to 60 V
Forward Current 7.5 A
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
1
2
PIN
DIA.
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (MBRF7Hxx)
TO-220AC (MBR7Hxx)
Dimensions in inches
and (millimeters)
TO-263AB (MBRB7Hxx)
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
1
2
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2
CASE
0.370 (9.40)
0.360 (9.14)
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
Metal silicon junction, majority carrier conduction
Low forward voltage drop, low power loss
and high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
High temperature soldering guaranteed:
250 C/10 seconds, 0.25" (6.35 mm) from case
Rated for reverse surge and ESD
175 C maximum operation junction temperature
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88796
www.vishay.com
14-Mar-03
1
Schottky Barrier Rectifiers
New Product
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88796
2
14-Mar-03
Maximum Ratings
(T
C
= 25 C unless otherwise noted)
Parameter
Symbol
MBR7H35 MBR7H45 MBR7H50 MBR7H60
Unit
Maximum repetitive peak reverse voltage
V
RRM
35
45
50
60
V
Working peak reverse voltage
V
RWM
35
45
50
60
V
Maximum DC blocking voltage
V
DC
35
45
50
60
V
Max. average forward rectified current (see fig. 1)
I
F(AV)
7.5
A
Peak repetitive forward current at T
C
= 155 C
(rated V
R
, 20 KHz sq. wave)
I
FRM
15
A
Non-repetitive avalanche energy
at 25
C, I
AS
= 4 A, L = 10 mH
E
AS
80
mJ
Peak forward surge current 8.3ms single half sine-wave
I
FSM
150
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current
at t
p
= 2.0
s, 1 KH
Z
I
RRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20
s waveform)
E
RSM
20
10
mJ
Electrostatic discharge capacitor voltage
V
C
25
kV
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated V
R
)
dv/dt
10,000
V/
s
Operating junction temperature range
T
J
65 to +175
C
Storage temperature range
T
STG
65 to +175
C
RMS Isolation voltage (MBRF type only) from terminals
4500
(1)
to heatsink with t = 1.0 second, RH
30%
V
ISOL
3500
(2)
V
1500
(3)
Electrical Characteristics
(T
C
= 25 C unless otherwise noted)
Parameter
Symbol
MBR7H35, MBR7H45
MBR7H50, MBR7H60
Unit
Typ
Max
Typ
Max
Maximum instantaneous
at I
F
= 7.5 A
T
J
= 25 C
0.63
0.73
forward voltage
(4)
at I
F
= 7.5 A
T
J
= 125 C
V
F
0.50
0.55
0.58
0.61
V
at I
F
= 15 A
T
J
= 25 C
0.75
0.87
at I
F
= 15 A
T
J
=125 C
0.61
0.66
0.68
0.72
Maximum instantaneous reverse current
T
J
= 25 C
50
50
A
at rated DC blocking voltage
(4)
T
J
=125 C
I
R
3.0
10
2.0
10
mA
Thermal Characteristics
(T
C
= 25 C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Thermal resistance from junction to case
R
JC
3.0
5.0
3.0
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19")
(2) Clip mounting (on case), where leads do overlap heatsink
(4) Pulse test: 300 ms pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR7H35 MBR7H60
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
MBRF7H35 MBRF7H60
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
13" reel, 800/reel, 4.8K/carton
MBRB7H35 MBRB7H60
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13" reel, 800/reel, 4.8K/carton
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88796
www.vishay.com
14-Mar-03
3
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
1
10
100
25
50
75
100
125
150
175
Fig. 3 Typical Instantaneous
Forward Characteristics
Fig. 5 Typical Junction
Capacitance
Fig. 6 Typical Transient
Thermal Impedance
Number of Cycles at 60 H
Z
Reverse Voltage (V)
P
eak F
orw
ard Surge Current (A)
0
2
4
6
8
10
0
25
50
75
100
125
150
175
Fig. 1 Forward Current
Derating Curve
A
v
er
age F
orw
ard Current (A)
Case Temperature (
C)
Fig. 2 Maximum Non-Repetitive
Peak Forward Surge Current
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous F
orw
ard Current (A)
0
20
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
Fig. 4 Typical Reverse
Characteristics
Instantaneous Re
v
erse Leakage Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
r
anseint
Ther
mal Impedance (
C/W)
pF - J
unction Capacitance
0.01
0.1
0.1
1
1.0
10
10
1
0.1
10
100
100
1000
10
1
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
T
J
= 150
C
T
J
= 150
C
T
J
= 125
C
T
J
= 25
C
T
J
= 125
C
T
J
= 25
C
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
T
J
= 25
C
f = 1.0 MH
Z
Vsig = 50mVp-p
MBRF
MBR, MBRB
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