FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rated
D Lead (Pb)-Free Version is RoHS
Compliant
Available
Si6866DQ
Vishay Siliconix
Document Number: 71102
S-50695--Rev. B, 18-Apr-05
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
20
0.030 @ V
GS
= 4.5 V
"5.8
20
0.040 @ V
GS
= 2.5 V
"5.0
Si6866DQ
S
1
G
1
S
2
G
2
1
2
3
4
8
7
6
5
D
D
D
D
TSSOP-8
Top View
D
Ordering Information: Si6866DQ-T1
Si6866DQ-T1--E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
"12
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
"5.8
"5.0
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
"4.7
"4.0
A
Pulsed Drain Current (10 ms Pulse Width)
I
DM
"30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.5
1.1
Maximum Power Dissipation
a
T
A
= 25_C
P
D
1.67
1.2
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
1.06
0.76
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t v 10 sec
R
60
75
Maximum Junction-to-Ambient
a
Steady State
R
thJA
86
105
_C/W
Maximum Junction-to-Foot
Steady State
R
thJF
38
45
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si6866DQ
Vishay Siliconix
www.vishay.com
2
Document Number: 71102
S-50695--Rev. B, 18-Apr-05
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
0.6
1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "12 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85_C
25
mA
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 4.5
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5
V, I
D
= 5.8 A
0.023
0.030
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 5.0 A
0.033
0.040
W
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 5.8 A
18
S
Diode Forward Voltage
a
V
SD
I
S
= 1.5 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
11
15
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 5.8 A
2.4
nC
Gate-Drain Charge
Q
gd
2.4
Turn-On Delay Time
t
d(on)
17
25
Rise Time
t
r
V
DD
= 10 V, R
L
= 10 W
37
50
Turn-Off Delay Time
t
d(off)
V
DD
= 10 V, R
L
= 10 W
I
D
^ 1 A, V
GEN
= 4.5 V, R
G
= 6 W
41
55
ns
Fall Time
t
f
24
35
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.5 A, di/dt = 100 A/ms
30
40
Notes
a.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
6
12
18
24
30
0
2
4
6
8
10
V
GS
= 5 thru 3 V
T
C
= -55_C
125_C
2 V
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
1.5 V
2.5 V
Si6866DQ
Vishay Siliconix
Document Number: 71102
S-50695--Rev. B, 18-Apr-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS
(
on)
-
On-Resiistance
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0
400
800
1200
1600
0
4
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0.0
0.9
1.8
2.7
3.6
4.5
0
3
6
9
12
0.00
0.02
0.04
0.06
0.08
0.10
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 5.8 A
I
D
- Drain Current (A)
V
GS
= 4.5 V
I
D
= 5.8 A
V
GS
= 2.5 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
T
J
= 150_C
T
J
= 25_C
I
D
= 5.8 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
V
GS
= 4.5 V
Si6866DQ
Vishay Siliconix
www.vishay.com
4
Document Number: 71102
S-50695--Rev. B, 18-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
8
32
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
16
24
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 86_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
100
10
10
-1
10
-2
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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71102
.
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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