VISHAY
TFBS4710
Document Number 82612
Rev. 1.3, 11-Nov-03
Vishay Semiconductors
www.vishay.com
1
Not for New Design
18071
Serial Infrared Transceiver SIR, 115.2 kbit/s,
2.7 V to 5.5 V Operation
Description
The TFBS4710 is a low profile, full range Infrared
Data Transceiver module. It supports IrDA data rates
up to 115.2 kbit/s (SIR). The transceiver module con-
sists of a photo PIN photodiode, an infrared emitter
(IRED), and a low-power CMOS control IC to provide
a total front-end solution in a single package.
The device has a link distance of 1 meter. The Rxd
pulse width is independent of the duration of Txd
pulse and always stays at a fixed width thus making
the device optimum for all standard SIR Encoder/
Decoder and interfaces. The Shut Down (SD) feature
cuts current consumption to typically 10 nA.
Features
Compliant with the latest IrDA physical layer
specification ( 9.6 kbit/s to 115.2 kbit/s)
Small package:
H 2.74 mm x D 3.33 mm x L 8.96 mm
Typical Link distance 1 m
Drop in replacement for IRM5000D/ IRMT5000
Battery & Power Management Features:
> Idle Current - 75
A Typical
> Shutdown Current - 10 nA Typical
> Operates from 2.4 V - 5.0 V within specification
over full temperature range from - 25 C to + 85 C
Remote Control - transmit distance up to 8 meters
Tri-State Receiver Output, floating in shutdown
with a weak pull-up
Fixed Rxd output pulse width (2
s typical)
Meets IrFM Fast Connection requirements
Split power supply, an independant, unregulated
supply for IRED Anode and a well regulated
supply for V
CC
Directly Interfaces with Various Super I/O and
Controller Devices and Encoder/ Decoder such as
TOIM4232.
Applications
Ideal for Battery Operated Devices
PDAs
Mobile Phones
Electronic Wallet (IrFM)
Notebook Computers
Digital Still and Video Cameras
Printers, Fax Machines, Photocopiers,
Screen Projectors
Data Loggers
External Infrared Adapters (Dongles)
Diagnostics Systems
Medical and Industrial Data Collection Devices
Parts Table
Part
Description
Qty / Reel
TFBS4710-TR1
Oriented in carrier tape for side view surface mounting
1000 pcs
TFBS4710-TT1
Oriented in carrier tape for top view surface mounting
1000 pcs
www.vishay.com
2
Document Number 82612
Rev. 1.3, 11-Nov-03
VISHAY
TFBS4710
Vishay Semiconductors
Functional Block Diagram
Pinout
TFBS4710
weight 100 mg
Definitions:
In the Vishay transceiver data sheets the following nomenclature is
used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared
standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy
1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the
Low Power Option to MIR and FIR and VFIR was added with IrPhy
1.4.A new version of the standard in any case obsoletes the former
version.
With introducing the updated versions the old versions are obso-
lete. Therefore the only valid IrDA standard is the actual version
IrPhy 1.4 (in Oct. 2002).
Pin Description
Driver
Comp
Amp
Driver
TxD
SD
GND
Power
Control
VCC
IRED A
RxD
18280
1
2
3
4
5
6
18511
Pin Number
Function
Description
I/O
Active
1
IRED
Anode
IRED Anode is connected to a power supply. The LED current can be decreased
by adding a resistor in series between the power supply and IRED Anode. A
separate unregulated power supply can be used at this pin.
2
Txd
This Input is used to turn on IRED transmitter when SD is low. An on-chip
protection circuit disables the LED driver if the Txd pin is asserted for longer than
80
s
I
HIGH
3
Rxd
Received Data Output, normally stays high but goes low for a fixed duration
during received pulses. It is capable of driving a standard CMOS or TTL load.
O
LOW
4
SD
Shutdown. Setting this pin active for more than 1.5 ms switches the device into
shutdown mode
I
HIGH
5
V
CC
Regulated Supply Voltage
6
GND
Ground
VISHAY
TFBS4710
Document Number 82612
Rev. 1.3, 11-Nov-03
Vishay Semiconductors
www.vishay.com
3
Absolute Maximum Ratings
Reference Point Ground, Pin 6 unless otherwise noted.
Electrical Characteristics
Transceiver
T
amb
= 25 C, V
CC
= V
IREDA
= 2.4 V to 5.5 V unless otherwise noted.
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
Supply voltage range, all states
V
CC
- 0.3
+ 6.0
V
Input current
For all Pins except IRED Anode
Pin
I
CC
10.0
mA
Output Sink Current, Rxd
25.0
mA
Average output current, pin 1
20 % duty cycle
I
IRED
(DC)
60
mA
Repetitive pulsed output current < 90
s, t
on
< 20 %
I
IRED
(RP)
300
mA
IRED anode voltage, pin 1
V
IREDA
- 0.5
+ 6.0
V
Voltage at all inputs and outputs V
in
> V
CC
is allowed
V
IN
- 0.5
+ 6.0
V
Power dissipation
See derating curve
200
mW
Junction temperature
125
C
Ambient temperature range
(operating)
T
amb
- 30
+ 85
C
Storage temperature range
T
stg
- 40
+ 100
C
Soldering temperature
See Recommended Solder
Profile
240
C
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
Supply voltage range, all states
V
CC
2.4
5.5
V
Idle supply current @ V
CC1
(receive mode, no signal)
SD = Low, E
e
= 1 klx
*)
,
T
amb
= - 25 C to + 85 C,
V
CC1
= V
CC2
= 2.7 V to 5.5 V
I
CC1
90
130
A
SD = Low, E
e
= 1 klx
*)
,
T
amb
= 25 C,
V
CC1
= V
CC2
= 2.7 V to 5.5 V
I
CC1
75
A
Receive current
V
CC
= 2.7 V
I
CC
280
A
Shutdown current
SD = High, T = 25 C, E
e
= 0 klx
I
SD
2
A
SD = High, T = 85 C
I
SD
3
A
Operating temperature range
T
A
- 25
+ 85
C
Output voltage low, Rxd
I
OL
= 1 mA
V
OL
- 0.5
0.15 x V
CC
V
Output voltage high, Rxd
I
OH
= - 500
A
V
OH
0.8 x V
CC
V
CC
+ 0.5
V
I
OH
= - 250
A
V
OH
0.9 x V
CC
V
CC
+ 0.5
V
Rxd to V
CC
impedance
R
Rxd
400
500
600
k
Input voltage low: Txd, SD
V
IL
- 0.5
0.5
V
Input voltage high: Txd, SD
CMOS level (0.5 x V
CC
typ,
threshold level)
V
IH
V
CC
- 0.5
6.0
V
Input leakage current (Txd, SD)
V
in
= 0.9 x V
CC
I
ICH
- 2
+ 2
A
www.vishay.com
4
Document Number 82612
Rev. 1.3, 11-Nov-03
VISHAY
TFBS4710
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
T
amb
= 25 C, V
CC
= 2.4 V to 5.5 V unless otherwise noted
Transmitter
T
amb
= 25 C, V
CC
= 2.4 V to 5.5 V unless otherwise noted.
Controlled pull down current
SD, Txd = "0" or "1",
0 < V
in
< 0.15 V
CC
I
IRTx
+ 150
A
SD, Txd = "0" or "1"
V
in
> 0.7 V
CC
I
IRTx
- 1
0
1
A
Input capacitance
C
I
5
pF
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
Minimum detection threshold
irradiance, SIR mode
9.6 kbit/s to 115.2 kbit/s
= 850 nm - 900 nm,
0 = , 15
E
e
10
(1.0)
25
(2.5)
40
(4)
mW/m
2
(
W/cm
2
)
Maximum detection threshold
irradiance
= 850 nm - 900 nm
E
e
5
(500)
kW/m
2
(mW/cm
2
)
Maximum no detection
threshold irradiance
E
e
4
(0.4)
mW/m
2
(
W/cm
2
)
Rise time of output signal
10 % to 90 %, C
L
= 15 pF
t
r(Rxd)
10
100
ns
Fall time of output signal
90 % to 10 %, C
L
= 15 pF
t
f(Rxd)
10
100
ns
Rxd pulse width
Input pulse width > 1.2
s
t
PW
1.65
2.0
3.0
s
Leading edge jitter
Input Irradiance = 100 mW/m
2
,
115.2 kbit/s
250
ns
Standby /Shutdown delay
After shutdown active
150
s
Receiver startup time
Power-on delay
Latency
t
L
150
s
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
IRED operating current
I
D
250
300
350
mA
IRED forward voltage
I
r
= 300 mA
V
f
1.4
1.8
1.9
V
IRED leakage current
Txd = 0 V, 0 < V
CC
< 5.5 V
I
IRED
- 1
1
A
Output radiant intensity
= 0 , 15 , Txd = High,
SD = Low
I
e
40
70
350
mW/sr
V
CC
= 5.0 V,
= 0 , 15 , Txd =
High or SD = High (Receiver is
inactive as long as SD = High)
I
e
0.04
mW/sr
Output radiant intensity, angle of
half intensity
24
Peak-emission wavelength
P
880
900
nm
Spectral bandwidth
45
nm
Optical rise time
t
ropt
10
100
ns
Optical fall time
t
fopt
10
100
ns
Optical output pulse duration
Input pulse width 1.63
s,
115.2 kbit/s
t
opt
1.46
1.63
1.8
s
Input pulse width t
Txd
< 20
s
t
opt
t
Txd
t + 0.15
s
Input pulse width t
Txd
20 s
t
opt
50
s
Optical overshoot
25
%
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
VISHAY
TFBS4710
Document Number 82612
Rev. 1.3, 11-Nov-03
Vishay Semiconductors
www.vishay.com
5
Recommended Solder Profile
Recommended Circuit Diagram
The TFBS4710 integrates a sensitive receiver and a
built-in power driver. This combination needs a care-
ful circuit layout. The use of thin, long, resistive and
inductive wiring should be avoided. The inputs (Txd,
SD) and the output (Rxd) should be directly (DC) cou-
pled to the I/O circuit.
The combination of resistor R1 and capacitors C1,
C2, C3 and C4 filter out any power supply noise to
provide a smooth supply voltage.
The placement of these components is critical. It is
strongly recommended to position C3 and C4 as
close as possible to the transceiver power supply
pins. A Tantalum capacitor should be used for C1 and
C3 while a ceramic capacitor should be used for C2
and C4.
A current limiting resistor is not needed for normal
operation. It is strongly recommended to use the Rled
values mentioned in Table 1 below for high
temperature operation. For Low Power Mode, IRED
Anode voltage of less than 5 V is recommended.
Under extreme EMI conditions as placing a RF -
transmitter antenna on top of the transceiver, it is rec-
ommended to protect all inputs by a low-pass filter, as
a minimum a 12 pF capacitor, especially at the Rxd
port.
Basic RF design rules for circuit design should be fol-
lowed. Especially longer signal lines should not be
used without proper termination. For reference see
"The Art of Electronics" by Paul Horowitz, Winfield
Hill, 1989, Cambridge University Press, ISBN:
0521370957.
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0
50
100
150
200
250
300
350
Time/s
Temperature
/
C
2...4C/s
2 - 4 C/s
10 s max. @ 230C
120 s...180 s
160C max.
240C max.
90 s max.
18075
Figure 1. Recommended Application Circuit
VCC
Rled
R1= 47
C1
4.7 F
C2
0.1F
C3
4.7 F
C4
0.1 F
IR Controller
IRRX
IRTX
IRMODE
Vdd
GND
Vcc
(5)
SD
(4)
GND
(6)
RxD
(3)
IREDA (1)
TxD
(2)
TFBS4710
18281
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