1N4151W-V
Document Number 85721
Rev. 1.2, 06-Apr-05
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Fast Switching Diode
Features
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case
styles including the DO-35 case with the type des-
ignation 1N4151, and the MiniMELF case with the
type designation LL4151.
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
1)
Valid provided that electrodes are kept at ambient temperature.
Part
Ordering code
Marking
Remarks
1N4151W-V
1N4151W-V-GS18 or 1N4151W-V-GS08
A5
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
50
V
Peak reverse voltage
V
RM
75
V
Average rectified current half
wave rectification with resistive
load
T
amb
= 25 C and f
50 Hz
I
F(AV)
150
1)
mA
Surge current
t < 1 s and T
j
= 25 C
I
FSM
500
mA
Power dissipation
T
amb
= 25 C
P
tot
410
1)
mW
e3
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2
Document Number 85721
Rev. 1.2, 06-Apr-05
1N4151W-V
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 C, unless otherwise specified
1)
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Rectification Efficiency Measurement Circuit
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
R
thJA
450
1)
C/W
Junction temperature
T
j
150
C
Storage temperature range
T
S
- 65 to 150
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 50 mA
V
F
1.0
V
Leakage current
V
R
= 50 V
I
R
50
nA
V
R
= 20 V, T
j
= 150 C
I
R
50
A
Reverse breakdown voltage
I
R
= 5
A (pulsed)
V
(BR)R
75
V
Capacitance
V
F
= V
R
= 0 V
2
pF
Reverse recovery time
I
F
= 10 mA to I
R
= 10 mA
to I
R
= 1 mA
t
rr
4
ns
I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
t
rr
2
ns
Rectification efficiency
f = 100 MHz, V
RF
= 2 V
0.45
17436
60
5 k
2 nF
V
O
V
= 2 V
RF
1N4151W-V
Document Number 85721
Rev. 1.2, 06-Apr-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
18742
1000
100
10
1
0.1
0.01
I
-
Forward
Current
(
m
A
)
F
0
0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
0.2
V - Forward Voltage ( V )
= 100
C
T
j
25
C
F
18662
1
10
100
1000
10000
r
-
Dynamic
Forward
Resistance
(
)
f
1
10
0.1
0.01
100
I
F
- Forward Current ( mA )
= 25
C
T
j
f = 1 kHz
200
18743
T
amb
- Ambient Temperature (
C )
1000
800
600
400
200
20 40 60 80 100 120 140 160180
P
-
Admissible
Power
Dissipation
(
m
W
)
tot
0
0
Figure 4. Relative Capacitance vs. Reverse Voltage
Figure 5. Leakage Current vs. Junction Temperature
18664
2
4
6
8
0
1.1
1.0
0.9
0.8
0.7
10
C
-
Relative
Capacitance
(
p
F
)
tot
V
R
- Reverse Voltage ( V )
= 25
C
T
j
f = 1 MHz
1
18744
10
100
1000
10000
0 20
40 60 80 100 120 140 160 180 200
I
-
Leakage
Current
(
n
A
)
R
T
j
- Junction Temperature (
C )
= 50 V
V
R
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4
Document Number 85721
Rev. 1.2, 06-Apr-05
1N4151W-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
/T
T = 1/f
= t
p
p
I
FRM
t
p
T
t
I
= 0
0.1
0.2
0.5
10
10
1
-1
100
10
1
-5
10
10
-4
10
-3
10
-2
18709
I
-
Admissible
Repetitive
FRM
Peak
Forward
Curren
t(A)
t
p
- Pulse Length ( s )
Cathode Band
17432
0.55 (0.022)
1.70 (0.067)
1.40 (0.055)
3.85
(0.152)
3.55
(0.140)
2.85
(0.112)
2.55
(0.100)
0.1 (0.004) max.
1.35 (0.053) max.
0.25 (0.010) min.
0.15 (0.006) max.
2.40
(0.094)
1.40 (0.055)
ISO Method E
Mounting Pad Layout
0.72 (0.028)
1N4151W-V
Document Number 85721
Rev. 1.2, 06-Apr-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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