1N5059...1N5062
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
1 (4)
Document Number 86000
Silicon Mesa Rectifiers
Features
D
Controlled avalanche characteristics
D
Glass passivated
D
Low reverse current
D
High surge current loading
D
Hermetically sealed axialleaded glass
envelope
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
1N5059
V
R
200
V
g
=Repetitive peak reverse voltage
1N5060
R
=V
RRM
400
V
1N5061
600
V
1N5062
800
V
Peak forward surge current
t
p
=10ms, halfsinewave
I
FSM
50
A
Average forward current
R
thJA
=45K/W, T
amb
=50
C
I
FAV
2
A
g
R
thJA
=100K/W, T
amb
=75
C
I
FAV
0.8
A
Junction and storage
temperature range
T
j
=T
stg
55...+175
C
Max. pulse energy in avalanche
mode, non repetitive
(inductive load switch off)
I
(BR)R
=1A, indicutive load
E
R
20
mJ
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
lead length l = 10mm, T
L
= constant
R
thJA
45
K/W
on PC board with spacing 25 mm
R
thJA
100
K/W
1N5059...1N5062
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
2 (4)
Document Number 86000
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=1A
V
F
1
V
g
I
F
=2.5A
V
F
1.15
V
Reverse current
V
R
=V
RRM
I
R
1
m
A
V
R
=V
RRM
, T
j
=100
C
I
R
10
m
A
V
R
=V
RRM
, T
j
=150
C
I
R
100
m
A
Reverse breakdown voltage
I
R
=100
m
A
1N5059
V
(BR)R
225
1600
V
g
R
m
1N5060
V
(BR)R
450
1600
V
1N5061
V
(BR)R
650
1600
V
1N5062
V
(BR)R
900
1600
V
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
4
m
s
Diode capacitance
V
R
=0V, f=1MHz
C
D
50
pF
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
40
80
120
160
200
25
50
75
100
125
150
175
T
j
Junction Temperature (
C )
15764
V
R
= V
RRM
P
Reverse Power Dissipation ( mW
)
R
160K/W
100K/W
45K/W
R
thJA
=
1N5062
1N5061
1N5060
1N5059
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0.1
1.0
10.0
100.0
1000.0
25
50
75
100
125
150
175
T
j
Junction Temperature (
C )
15765
V
R
= V
RRM
m
I Reverse Current (
A
)
R
Figure 2. Max. Reverse Current vs.
Junction Temperature
1N5059...1N5062
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
3 (4)
Document Number 86000
0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80 100 120 140 160 180
T
amb
Ambient Temperature (
C )
15763
I
A
verage
Forward
Current
(
A
)
FA
V
V
R
= V
R RM
half sinewave
R
thJA
=100K/W
PCB: d=25mm
R
thJA
=45K/W
l=10mm
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
I Forward Current (
A
)
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
Forward Voltage ( V )
15762
F
T
j
= 25
C
T
j
= 175
C
0.01
0.1
1
10
100
0.001
Figure 4. Max. Forward Current vs. Forward Voltage
0
10
20
30
40
50
0.1
1.0
10.0
100.0
V
R
Reverse Voltage ( V )
15766
C Diode Capacitance ( pF )
D
f=1MHz
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
Cathode Identification
3.6 max.
0.82 max.
4.2 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
technical drawings
according to DIN
specifications
94 9538
26 min.
26 min.
Polarity: Cathode indicated by a band
1N5059...1N5062
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
4 (4)
Document Number 86000
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
PDF 
ZIP