Si5475DC
Vishay Siliconix
Document Number: 71324
S-21251--Rev. B, 05-Aug-02
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
()
I
D
(A)
0.031 @ V
GS
= --4.5 V
--7.6
--12
0.041 @ V
GS
= --2.5 V
--6.6
0.054 @ V
GS
= --1.8 V
--5.8
1206-8 ChipFETt
D
D
D
G
D
D
D
S
1
S
G
D
P-Channel MOSFET
Bottom View
Marking Code
BF XX
Lot Traceability
and Date Code
Part #
Code
Ordering Information: Si5475DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
--12
V
Gate-Source Voltage
V
GS
8
V
Continuous Drain Current (T
J
= 150_C)
a
T
A
= 25_C
I
D
--7.6
--5.5
Continuous Drain Current (T
J
= 150_C)
a
T
A
= 85_C
I
D
--3.5
--3.9
A
Pulsed Drain Current
I
DM
20
A
Continuous Source Current
a
I
S
--2.1
--1.1
Maximum Power Dissipation
a
T
A
= 25_C
P
D
2.5
1.3
W
Maximum Power Dissipation
a
T
A
= 85_C
P
D
1.3
0.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
--55 to 150
_
C
Soldering Recommendations (Peak Temperature)
b, c
260
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t 5 sec
R
40
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
80
95
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
C/
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
b.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
c.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Si5475DC
Vishay Siliconix
www.vishay.com
2
Document Number: 71324
S-21251--Rev. B, 05-Aug-02
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= --I mA
--0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= 8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= --9.6 V, V
GS
= 0 V
--1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= --9.6 V, V
GS
= 0 V, T
J
= 85_C
--5
mA
On-State Drain Current
a
I
D(on)
V
DS
--5 V, V
GS
= --4.5 V
--20
A
V
GS
= --4.5 V, I
D
= --5.5 A
0.027
0.031
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= --2.5 V, I
D
= --4.8 A
0.035
0.041
DS(on)
V
GS
= --1.8 V, I
D
= --2 A
0.045
0.054
Forward Transconductance
a
g
fs
V
DS
= --5 V, I
D
= --5.2 A
19
S
Diode Forward Voltage
a
V
SD
I
S
= --1.1 A, V
GS
= 0 V
--0.7
--1.2
V
Dynamic
b
Total Gate Charge
Q
g
19
29
Gate-Source Charge
Q
gs
V
DS
= --6 V, V
GS
= --4.5 V, I
D
= --5.5 A
3.9
nC
Gate-Drain Charge
Q
gd
3.6
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
DD
= --6 V, R
L
= 6
20
30
Turn-Off Delay Time
t
d(off)
V
DD
= --6 V, R
L
= 6
I
D
--1 A, V
GEN
= --4.5 V, R
G
= 6
122
180
ns
Fall Time
t
f
80
120
Source-Drain Reverse Recovery Time
t
rr
I
F
= --1.1 A, di/dt = 100 A/ms
40
60
Notes
a.
Pulse test; pulse width 300 ms, duty cycle 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
T
C
= --55_C
125_C
1.5 V
25_C
Output Characteristics
Transfer Characteristics
V
DS
-- Drain-to-Source Voltage (V)
-
-
D
r
ai
n
C
urrent
(A
)
I
D
V
GS
-- Gate-to-Source Voltage (V)
-
-
D
r
ai
n
C
urrent
(A
)
I
D
1 V
2 V
Si5475DC
Vishay Siliconix
Document Number: 71324
S-21251--Rev. B, 05-Aug-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-
-
On-R
esi
s
tance
(
r
D
S
(on)
)
0
500
1000
1500
2000
2500
3000
0
2
4
6
8
10
12
0.8
0.9
1.0
1.1
1.2
1.3
1.4
--50
--25
0
25
50
75
100
125
150
0
1
2
3
4
5
0
5
10
15
20
0.00
0.02
0.04
0.06
0.08
0.10
0
5
10
15
20
V
DS
-- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 6 V
I
D
= 5.5 A
I
D
-- Drain Current (A)
V
GS
= 4.5 V
I
D
= 5.5 A
V
GS
= 2.5 V
V
GS
= 1.8 V
Gate Charge
On-Resistance vs. Drain Current
-
-
Gate-to-S
ource
V
o
l
t
age
(V
)
Q
g
-- Total Gate Charge (nC)
C
-
-
C
apaci
t
ance
(
pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
-- Junction Temperature (_C)
(N
ormal
i
z
ed)
-
-
On-R
esi
s
tance
(
r
DS(
o
n
)
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.02
0.04
0.06
0.08
0.10
0
1
2
3
4
5
T
J
= 150_C
T
J
= 25_C
I
D
= 5.5 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
-
On-R
esi
s
tance
(
r
DS(
o
n
)
)
V
SD
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
-
-
S
ource
C
u
rrent
(A
)
I
S
V
GS
= 4.5 V
Si5475DC
Vishay Siliconix
www.vishay.com
4
Document Number: 71324
S-21251--Rev. B, 05-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
50
10
20
Po
we
r
(
W)
Single Pulse Power
Time (sec)
40
1
100
600
10
10
--1
10
--2
10
--3
10
--3
10
--2
1
10
600
10
--1
10
--4
100
--0.15
--0.10
--0.05
--0.00
0.05
0.10
0.15
0.20
0.25
0.30
--50
--25
0
25
50
75
100
125
150
I
D
= 1
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
a
ri
ance
(
V
)
V
GS
(th)
T
J
-- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
No
r
m
a
lize
d
Ef
fe
ctive
T
r
a
n
s
ie
n
t
Thermal
I
mpedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80_C/W
3. T
JM
-- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
--3
10
--2
1
10
10
--1
10
--4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
No
r
m
a
lize
d
Ef
fe
ctive
T
r
a
n
s
ie
n
t
Thermal
I
mpedance
PDF 
ZIP