2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030--Rev. D, 04-Jun-01
www.vishay.com
9-1
P-Channel JFETs
2N5460
SST5460
2N5461
SST5461
2N5462
SST5462
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
2N/SST5460
0.75 to 6
40
1
1
2N/SST5461
1 to 7.5
40
1.5
2
2N/SST5462
1.8 to 9
40
2
4
FEATURES
BENEFITS
APPLICATIONS
D
High Input Impedance
D
Very Low Noise
D
High Gain: A
V
= 80 @ 20
m
A
D
Low Capacitance: 1.2 pF Typical
D
Low Signal Loss/System Error
D
High System Sensitivity
D
High-Quality Low-Level Signal
Amplification
D
Low-Current, Low-Voltage Amplifiers
D
High-Side Switching
D
Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
Top View
S
G
D
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
2N5460
2N5461
2N5462
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage
40 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
40 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/
_
C above 25
_
C
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-2
Document Number: 70262
S-04030--Rev. D, 04-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N/SST5460
2N/SST5461
2N/SST5462
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 10
m
A , V
DS
= 0 V
55
40
40
40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 1
m
A
0.75
6
1
7.5
1.8
9
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
1
5
2
9
4
16
mA
V
GS
= 20 V, V
DS
= 0 V
0.003
5
5
5
nA
Gate Reverse Current
I
GSS
T
A
= 100
_
C
0.0003
1
1
1
m
A
Gate Operating Current
I
G
V
DG
= 20 V, I
D
= 0.1 mA
3
Drain Cutoff Current
I
D(off)
V
DS
= 15 V, V
GS
= 10 V
5
pA
I
D
= 0.1 mA
1.3
0.5
4
Gate-Source Voltage
V
GS
V
DS
= 15 V
I
D
= 0.2 mA
2.3
0.8
4.5
I
D
= 0.4 mA
3.8
1.5
6
V
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V, V
GS
= 0 V
1
4
1.5
5
2
6
mS
Common-Source
Output Conductance
g
os
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
75
75
75
m
S
Common-Source
2N
4.5
7
7
7
Reverse Transfer
Capacitance
C
iss
SST
4.5
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
1.2
pF
Common-Source
2N
1.5
2
2
2
Common-Source
Output Capacitance
C
oss
SST
1.5
Equivalent Input
V
DS
= 15 V, V
GS
= 0 V
2N
15
115
115
115
nV
/
Equivalent Input
Noise Voltage
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
SST
15
nV
/
Hz
V
DS
= 15 V, V
GS
= 0 V
W
2N
0.2
2.5
2.5
2.5
Noise Figure
NF
f = 100 Hz, R
G
= 1 M
W
BW = 1 Hz
SST
0.2
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIB
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030--Rev. D, 04-Jun-01
www.vishay.com
9-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
20
0
2
4
6
8
10
16
12
8
4
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
g
fs
@ V
DS
= 15 V, V
GS
= 0 V
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
5
0
2.5
1000
0
2
4
6
8
10
800
600
400
200
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
r
DS
@ I
D
= 100 mA, V
GS
= 0 V
g
os
@ V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
r
DS
g
os
100
80
60
40
20
0
2
0
4
8
12
16
20
1.6
1.2
0.8
0.4
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
Drain Current (mA)
I
D
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
V
GS
= 0 V
V
GS(off)
= 1.5 V
0.5
0
0.2
0.4
0.6
0.8
1
0.4
0.3
0.2
0.1
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
Drain Current (mA)
I
D
0.4 V
0.6 V
0.8 V
1.0 V
1.2 V
V
GS
= 0 V
10
0
4
8
12
16
20
8
6
4
2
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
Drain Current (mA)
I
D
V
GS
= 0 V
0.5 V
2.0 V
1.0 V
1.5 V
V
GS(off)
= 3 V
2
0
0.2
0.4
0.6
0.8
1
1.6
1.2
0.8
0.4
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
Drain Current (mA)
I
D
V
GS
= 0 V
0.5 V
2.0 V
2.5 V
1.0 V
1.5 V
V
GS(off)
= 3 V
V
GS(off)
= 1.5 V
0.2 V
S)
g
os
Output Conductance (
m
I
DS
S
Saturation Drain Current (mA)
g
fs
Forward T
ransconductance (mS)
r
DS
(
on)
Drain-Source On-Resistance (
)
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-4
Document Number: 70262
S-04030--Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
5
0
0.4
0.8
1.2
1.6
2
4
3
2
1
0
Transfer Characteristics
T
A
= 55
_
C
125
_
C
Drain Current (mA)
I
D
V
GS
Gate-Source Voltage (V)
25
_
C
10
0
1
2
3
4
5
8
6
4
2
0
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
T
A
= 55
_
C
125
_
C
Drain Current (mA)
I
D
25
_
C
0.1
1
10
1000
800
0
600
400
200
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
T
A
= 25
_
C
V
GS(off)
= 1.5 V
3 V
4 V
10 nA
1 nA
0.1 pA
0
30
40
20
10
50
100 pA
10 p A
1 pA
Gate Leakage Current
V
DG
Drain-Gate Voltage (V)
Gate Leakage
I
G
I
GSS
@ 125
_
C
I
GSS
@ 25
_
C
T
A
= 125
_
C
T
A
= 25
_
C
5 mA
5 mA
5
0
0.4
0.8
1.2
1.6
2
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
T
A
= 55
_
C
25
_
C
125
_
C
V
GS
Gate-Source Voltage (V)
5
0
1
2
3
4
5
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
T
A
= 55
_
C
25
_
C
125
_
C
V
GS
Gate-Source Voltage (V)
V
GS(off)
= 1.5 V
V
DS
= 15 V
V
GS(off)
= 3 V
V
DS
= 15 V
V
GS(off)
= 1.5 V
V
DS
= 15 V
f = 1 kHz
V
GS(off)
= 3 V
V
DS
= 15 V
f = 1 kHz
1 mA
0.1 mA
r
DS
(
on)
Drain-Source On-Resistance (
)
g
fs
Forward T
ransconductance (mS)
g
fs
Forward T
ransconductance (mS)
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030--Rev. D, 04-Jun-01
www.vishay.com
9-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.01
0.1
1
100
80
0
60
40
20
A
V
V
oltage Gain
I
D
Drain Current (mA)
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off)
= 1.5 V
Circuit Voltage Gain vs. Drain Current
10
0
4
8
12
16
20
8
6
4
2
0
5
0
4
8
12
16
20
0
V
GS
Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Input Capacitance (pF)
C
iss
5 V
15 V
f = 1 MHz
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
Reverse Feedback Capacitance (pF)
C
rss
V
GS
Gate-Source Voltage (V)
5 V
15 V
f = 1 MHz
2.5
0.1
1
10
10
1
0.1
Common-Source Forward Transconductance
vs. Drain Current
I
D
Drain Current (mA)
T
A
= 55
_
C
125
_
C
10
100
1 k
100 k
10 k
100
10
1
0.1
1
10
20
16
0
12
8
4
Output Conductance vs. Drain Current
I
D
Drain Current (mA)
T
A
= 55
_
C
125
_
C
Equivalent Input Noise Voltage vs. Frequency
f Frequency (Hz)
V
DS
= 15 V
I
D
= 0.1 mA
I
D
= 1 mA
25
_
C
V
DS
= 15 V
f = 1 kHz
V
GS(off)
= 3 V
V
DS
= 15 V
f = 1 kHz
V
GS(off)
= 3 V
V
GS(off)
= 3 V
25
_
C
A
V
+
g
fs
R
L
1
)
R
L
g
os
R
L
+
10 V
I
D
g
fs
Forward T
ransconductance (
S)
e
n
Noise V
oltage nV
/ Hz
g
os
Output Conductance (
S)
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