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Электронный компонент: 2N5486

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2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-1
N-Channel JFETs
2N5484
SST5484
2N5485
SST5485
2N5486
SST5486
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
2N/SST5484
0.3 to 3
25
3
1
2N/SST5485
0.5 to 4
25
3.5
4
2N/SST5486
2 to 6
25
4
8
FEATURES
BENEFITS
APPLICATIONS
D
Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz 5485/6
D
Very Low Noise: 2.5 dB (typ) @
400 MHz 5485/6
D
Very Low Distortion
D
High AC/DC Switch Off-Isolation
D
Wideband High Gain
D
Very High System Sensitivity
D
High Quality of Amplification
D
High-Speed Switching Capability
D
High Low-Level Signal Amplification
D
High-Frequency Amplifier/Mixer
D
Oscillator
D
Sample-and-Hold
D
Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
D
S
G
TO-236
(SOT-23
)
2
3
1
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
D
S
G
TO-226AA
(TO-92)
Top View
2N5484
2N5485
2N5486
1
2
3
For applications information see AN102 and AN105.
2N/SST5484 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70246
S-04028--Rev. E, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
300
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/
_
C above 25
_
C
SPECIFICATIONS
FOR 2N SERIES (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484
2N5485
2N5486
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A , V
DS
= 0 V
35
25
25
25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 10 nA
0.3
3
0.5
4
2
6
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
1
5
4
10
8
20
mA
V
GS
= 20 V, V
DS
= 0 V
0.002
1
1
1
Gate Reverse Current
I
GSS
T
A
= 100
_
C
0.2
200
200
200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA
20
pA
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.8
V
Dynamic
Common-Source
Forward Transconductance
b
g
fs
V
DS
= 15 V, V
GS
= 0 V
3
6
3.5
7
4
8
mS
Common-Source
Output Conductance
b
g
os
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
50
60
75
m
S
Common-Source
Input Capacitance
C
iss
2.2
5
5
5
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.7
1
1
1
pF
Common-Source
Output Capacitance
C
oss
1
2
2
2
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
10
nV
/
Hz
High-Frequency
Common-Source
f = 100 MHz
5.5
2.5
Common-Source
Transconductance
Y
fs(RE)
f = 400 MHz
5.5
3
3.5
mS
Common-Source
V
DS
= 15 V
f = 100 MHz
45
75
m
Common-Source
Output Conductance
Y
os(RE)
V
DS
= 15 V
V
GS
= 0 V
f = 400 MHz
65
100
100
m
S
Common-Source
f = 100 MHz
0.05
0.1
Common-Source
Input Conductance
Y
is(RE)
f = 400 MHz
0.8
1
1
mS
V
DS
= 15 V, I
D
= 1 mA
f = 100 MHz
20
16
25
Common-Source Power Gain
G
ps
V
DS
= 15 V
f = 100 MHz
21
18
30
18
30
V
DS
= 15 V
I
D
= 4 mA
f = 400 MHz
13
10
20
10
20
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 M
W
, f = 1 kHz
0.3
2.5
2.5
2.5
dB
Noise Figure
NF
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 k
W
, f = 100 MHz
2
3
V
DS
= 15 V
f = 100 MHz
1
2
2
I
D
= 4 mA
R
G
= 1 k
W
f = 400 MHz
2.5
4
4
2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-3
SPECIFICATIONS FOR SST SERIES (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484
SST5485
SST5486
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A , V
DS
= 0 V
35
25
25
25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 10 nA
0.3
3
0.5
4
2
6
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
1
5
4
10
8
20
mA
V
GS
= 20 V, V
DS
= 0 V
0.002
1
1
1
Gate Reverse Current
I
GSS
T
A
= 100
_
C
0.2
200
200
200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA
20
pA
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.8
V
Dynamic
Common-Source
Forward Transconductance
b
g
fs
V
DS
= 15 V, V
GS
= 0 V
3
6
3.5
7
4
8
mS
Common-Source
Output Conductance
b
g
os
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
50
60
75
m
S
Common-Source
Input Capacitance
C
iss
2.2
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.7
pF
Common-Source
Output Capacitance
C
oss
1
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
10
nV
/
Hz
High-Frequency
Common-Source
f = 100 MHz
5.5
Common-Source
Transconductance
Y
fs
f = 400 MHz
5.5
mS
Common-Source
V
DS
= 15 V
f = 100 MHz
45
m
Common-Source
Output Conductance
Y
os
V
DS
= 15 V
V
GS
= 0 V
f = 400 MHz
65
m
S
Common-Source
f = 100 MHz
0.05
Common-Source
Input Conductance
Y
is
f = 400 MHz
0.8
mS
V
DS
= 15 V, I
D
=
1 mA
f = 100 MHz
20
Common-Source
Power Gain
G
ps
V
DS
= 15 V
f = 100 MHz
21
V
DS
= 15 V
I
D
= 4 mA
f = 400 MHz
13
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 M
W
, f = 1 kHz
0.3
dB
Noise Figure
NF
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 k
W
, f = 100 MHz
2
V
DS
= 15 V
f = 100 MHz
1
I
D
= 4 mA
R
G
= 1 k
W
f = 400 MHz
2.5
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NH
b.
Pulse test: PW
v
300
m
s duty cycle
v
3%.
c.
This parameter not registered with JEDEC.
2N/SST5484 Series
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70246
S-04028--Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
r
DS
g
os
r
DS
@
I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
I
DSS
g
fs
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DG
Drain-Gate Voltage (V)
I
D
Drain Current (mA)
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Gate Leakage Current
0.1 mA
I
GSS
@ 25
_
C
T
A
= 25
_
C
T
A
= 125
_
C
I
GSS
@
125
_
C
Output Characteristics
Output Characteristics
Common-Source Forward
Transconductance vs. Drain Current
0.1
1
10
10
8
0
V
GS(off)
= 3 V
T
A
= 55
_
C
25
_
C
125
_
C
0.2 V
0.4 V
0.6 V
0.8 V
1.2 V
1.0 V
V
GS
= 0 V
0.6 V
0.9 V
1.2 V
1.5 V
1.8 V
V
GS
= 0 V
0.3 V
10
8
0
6
4
2
20
0
16
12
8
4
0
10
2
4
6
8
100
80
0
60
40
20
500
0
400
300
200
100
0
10
2
4
6
8
0
12
8
4
16
20
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
6
4
2
10
0
8
6
4
2
0
10
2
4
6
8
15
0
12
9
6
3
0
10
2
4
6
8
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 2 V
V
GS(off)
= 3 V
I
D
= 5 mA
1 mA
0.1 mA
I
D
= 5 mA
1 mA
1.4 V
gos
Output Conductance (
S)
r
DS
(
on)

Drain-Source On-Resistance (
)
g
fs

Forward T
ransconductance (mS)
I
DS
S

Saturation Drain Current (mA)
g
fs

Forward T
ransconductance (mS)
I
G

Gate Leakage
I
D
Drain Current (mA)
I
D
Drain Current (mA)
2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
Transfer Characteristics
V
GS(off)
= 2 V
T
A
= 55
_
C
125
_
C
Transfer Characteristics
T
A
= 55
_
C
125
_
C
V
GS(off)
= 3 V
25
_
C
V
GS
Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
V
GS(off)
= 2 V
T
A
= 55
_
C
125
_
C
25
_
C
V
GS
Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
T
A
= 55
_
C
125
_
C
25
_
C
V
GS(off)
= 3 V
I
D
Drain Current (mA)
I
D
Drain Current (mA)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
0.1
1
10
T
A
= 25
_
C
3 V
V
GS(off)
= 2 V
10
0.1
A
V
+
g
fs
R
L
1
)
R
L
g
os
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
V
GS(off)
= 2 V
3 V
10
0
8
6
4
2
0
2
0.4
0.8
1.2
1.6
300
0
240
180
120
60
10
0
8
6
4
2
0
3
0.6
1.2
1.8
2.4
10
0
8
6
4
2
0
2
0.4
0.8
1.2
1.6
10
0
8
6
4
2
0
3
0.6
1.2
1.8
2.4
100
0
80
60
40
20
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
1
25
_
C
r
DS
(
on)

Drain-Source On-Resistance (
)
g
fs

Forward T
ransconductance (mS)
g
fs

Forward T
ransconductance (mS)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
A
V

V
oltage Gain