FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Soild State Relays
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
2N7000KL/BS170KL
Vishay Siliconix
New Product
Document Number: 72705
S-40247--Rev. A, 16-Feb-04
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
V
GS(th)
(V)
I
D
(A)
60
2 @ V
GS
= 10 V
1 0 to 2 5
0.47
60
4 @ V
GS
= 4.5 V
1.0 to 2.5
0.33
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
Ordering Information: 2N7000KL-TR1
Device Marking
Front View
"S" 2N
7000KL
xxyy
"S" = Siliconix Logo
xxyy = Date Code
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
Ordering Information: BS170KL-TR1
Device Marking
Front View
"S" BS
170KL
xxyy
"S" = Siliconix Logo
xxyy = Date Code
D
S
G
100 W
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C)
T
A
= 25_C
I
D
0.47
Continuous Drain Current
(T
J
= 150_C)
T
A
= 70_C
I
D
0.37
A
Pulsed Drain Current
a
I
DM
1.0
Power Dissipation
T
A
= 25_C
P
D
0.8
W
Power Dissipation
T
A
= 70_C
P
D
0.51
W
Maximum Junction-to-Ambient
R
thJA
156
_C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
Notes
a.
Pulse width limited by maximum junction temperature.
2N7000KL/BS170KL
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72705
S-40247--Rev. A, 16-Feb-04
SPECIFICATIONS
a
(T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 mA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1
2.0
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "10 V
"1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55_C
10
mA
On State Drain Current
b
I
D( )
V
GS
= 10 V, V
DS
= 7.5 V
0.8
A
On-State Drain Current
b
I
D(on)
V
GS
= 4.5 V, V
DS
= 10 V
0.5
A
Drain Source On Resistance
b
r
DS( )
V
GS
= 10 V, I
D
= 0.5 A
1.1
2
W
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.2 A
1.6
4
W
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
550
mS
Diode Forward Voltage
V
SD
I
S
= 0.3 A, V
GS
= 0 V
0.87
1.3
V
Dynamic
b
Total Gate Charge
Q
g
0.4
0.6
Gate-Source Charge
Q
gs
V
DS
= 10 V, V
GS
= 4.5 V
I
D
^ 0.25 A
0.11
nC
Gate-Drain Charge
Q
gd
I
D
^ 0.25 A
0.15
Gate Resistance
R
g
173
W
Turn On Time
t
d(on)
3.8
10
Turn-On Time
t
r
V
DD
= 30 V, R
L
= 150 W
I
D
^ 0 2 A V
GEN
= 10V
4.8
15
ns
Turn-Off Time
t
d(off)
I
D
^ 0.2 A, V
GEN
= 10V
R
g
= 10 W
12.8
20
ns
Turn-Off Time
t
f
g
9.6
15
Notes
a.
Pulse test: PW v300 ms duty cycle v2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
= 10, 7 V
3 V
5 V
4 V
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I D
T
J
= -55_C
125_C
25_C
6 V
1.2
0.9
0.6
0.3
0
2N7000KL/BS170KL
Vishay Siliconix
New Product
Document Number: 72705
S-40247--Rev. A, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.4
0.8
1.2
1.6
2.0
-50
-25
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
V
GS
= 10 V @ 500 mA
V
GS
= 4.5 V
@ 200 mA
0
1
2
3
4
5
6
7
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
DS
= 10 V
I
D
= 250 mA
Gate Charge
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
On-Resistance vs. Drain Current
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
-
On-Resistance (
r DS(on)
W
)
0
8
16
24
32
40
0
5
10
15
20
25
Capacitance
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
0
1
2
3
4
5
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
- Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
-
On-Resistance (
r DS(on)
W
)
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25_C
T
J
= 125_C
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
10
T
J
= -55_C
V
GS
= 0 V
r
DS
(
on)
-
On-Resiistance
(Normalized)
2N7000KL/BS170KL
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72705
S-40247--Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0
1
16
20
100
600
0.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
Threshold Voltage Variance Over Temperature
V
ariance (V)
V
GS(th)
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
T
J
- Junction Temperature (_C)
8
12
4
10
T
A
= 25_C
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
10
0.1
0.1
1
10
100
0.001
1
1 ms
-
Drain Current (A)
I
D
0.01
Limited by r
DS(on)
T
A
= 25_C
Single Pulse
10 ms
100 ms
dc
I
DM
Limited
I
D(on)
Limited
BV
DSS
Limited
10 s
1 s
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=350_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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