Si3455ADV
Vishay Siliconix
Document Number: 71090
S-40424--Rev. C, 15-Mar-04
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
-30
0.100 @ V
GS
= -10 V
-3.5
-30
0.170 @ V
GS
= -4.5 V
-2.7
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3455ADV-T1
Si3455ADV-T1--E3 (Lead Free)
Marking Code:
A5xxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
-3.5
-2.7
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
-2.8
-2.1
A
Pulsed Drain Current
I
DM
-20
A
Continuous Source Current (Diode Conduction)
a
I
S
-1.7
-0.95
Maximum Power Dissipation
a
T
A
= 25_C
P
D
2.0
1.14
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
1.3
0.73
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t v 5 sec
R
50
62.5
Maximum Junction-to-Ambient
a
Steady State
R
thJA
90
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
36
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si3455ADV
Vishay Siliconix
www.vishay.com
2
Document Number: 71090
S-40424--Rev. C, 15-Mar-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
-1.0
-3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20
V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V, T
J
= 85_C
-5
mA
On-State Drain Current
a
I
D(on)
V
DS
v -5 V, V
GS
= -10 V
-20
A
Drain Source On State Resistance
a
r
DS( )
V
GS
= -10 V, I
D
= -3.5 A
0.080
0.100
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -4.5 V, I
D
= -2.7 A
0.140
0.170
W
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -3.5 A
6
S
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
8.5
13
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -3.5 A
2.2
nC
Gate-Drain Charge
Q
gd
1.5
Turn-On Delay Time
t
d(on)
10
20
Rise Time
t
r
V
DD
= -15 V, R
L
= 15 W
7
15
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15 W
I
D
^ -1 A, V
GEN
= -10 V, R
g
= 6 W
20
35
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ms
30
60
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
20
0
1
2
3
4
5
6
7
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 10 thru 7 V
T
C
= -55_C
125_C
4 V
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
3 V
5 V
6 V
Si3455ADV
Vishay Siliconix
Document Number: 71090
S-40424--Rev. C, 15-Mar-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-
On-Resistance (
r
DS(on)
W
)
0
100
200
300
400
500
600
700
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
3
6
9
0.00
0.06
0.12
0.18
0.24
0.30
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 3.5 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 3.5 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.06
0.12
0.18
0.24
0.30
0
2
4
6
8
10
T
J
= 150_C
I
D
= 3.5 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
V
GS
= 4.5 V
T
J
= 25_C
r
DS
(
on)
-
On-Resiistance
(Normalized)
Si3455ADV
Vishay Siliconix
www.vishay.com
4
Document Number: 71090
S-40424--Rev. C, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
15
30
5
10
Power (W)
Single Pulse Power
Time (sec)
20
25
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
100
600
10
10
-1
10
-2
10
-3
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