FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% R
g
Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
Si4830ADY
Vishay Siliconix
Document Number: 72021
S-32621--Rev. D, 29-Dec-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
30
0.022 @ V
GS
= 10 V
7.5
30
0.030 @ V
GS
= 4.5 V
6.5
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
Schottky Diode
Ordering Information: Si4830ADY--E3 (Lead Free)
Si4830ADY-T1--E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
7.5
5.7
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
6.0
4.6
A
Pulsed Drain Current
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25_C
P
D
2.0
1.1
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
1.3
0.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
M i
J
ti
t A bi t
a
t v 10 sec
R
52
62.5
53
62.5
Maximum Junction-to-Ambient
a
Steady-State
R
thJA
93
110
93
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
35
40
35
40
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4830ADY
Vishay Siliconix
www.vishay.com
2
Document Number: 72021
S-32621--Rev. D, 29-Dec-03
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
0.8
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
V
DS
= 30 V V
GS
= 0 V
Ch-1
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-2
100
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V V
GS
= 0 V T
J
= 85_C
Ch-1
15
mA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85_C
Ch-2
2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
b
r
DS( )
V
GS
= 10 V, I
D
= 7.5 A
0.017
0.022
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 6.5 A
0.024
0.030
W
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 7.5 A
19
S
Diode Forward Voltage
b
V
SD
I
S
= 1 A V
GS
= 0 V
Ch-1
0.75
1.2
V
Diode Forward Voltage
b
V
SD
I
S
= 1 A, V
GS
= 0 V
Ch-2
0.47
0.5
V
Dynamic
a
Total Gate Charge
Q
g
7
11
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 7.5 A
2.9
nC
Gate-Drain Charge
Q
gd
DS
,
GS
,
D
2.5
Gate Resistance
R
g
0.5
1.5
2.4
W
Turn-On Delay Time
t
d(on)
9
15
Rise Time
t
r
V
DD
= 15 V, R
L
= 15 W
10
17
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15 W
I
D
^ 1 A, V
GEN
= 10 V, R
g
= 6 W
19
30
ns
Fall Time
t
f
9
15
ns
Source Drain Reverse Recovery Time
t
I
F
= 1 7 A di/dt = 100 A/ms
Ch-1
35
55
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
Ch-2
32
55
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.50
V
Forward Voltage Drop
V
F
I
F
= 1.0 A, T
J
= 125_C
0.36
0.42
V
V
r
= 30 V
0.004
0.100
Maximum Reverse Leakage Current
I
rm
V
r
= 30 V, T
J
= 100_C
0.7
10
mA
g
rm
V
r
= -30 V, T
J
= 125_C
3.0
20
Junction Capacitance
C
T
V
r
= 10 V
50
pF
Si4830ADY
Vishay Siliconix
Document Number: 72021
S-32621--Rev. D, 29-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0
240
480
720
960
1200
0
5
10
15
20
25
30
0
5
10
15
20
25
30
0
1
2
3
4
5
0
5
10
15
20
25
30
0
2
4
6
8
10
V
GS
= 10 thru 5 V
T
C
= 125_C
-55_C
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
3 V
-
On-Resistance (
r
DS(on)
W
)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
3
6
9
12
15
0.000
0.010
0.020
0.030
0.040
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
C
rss
V
DS
= 15 V
I
D
= 7.5 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 7.5 A
V
GS
= 10 V
V
GS
= 4.5 V
Gate Charge
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
C
oss
C
iss
4 V
On-Resistance vs. Drain Current
(Normalized)
-
On-Resistance
r
DS(on)
Si4830ADY
Vishay Siliconix
www.vishay.com
4
Document Number: 72021
S-32621--Rev. D, 29-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
2
4
6
8
10
T
J
= 150_C
I
D
= 7.5 A
20
10
0.1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Foot
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
100 ms
-
Drain Current (A)
I
D
0.1
Limited by r
DS(on)
T
C
= 25_C
Single Pulse
1 s
10 s
dc
1
T
J
= 25_C
10 ms
1 ms
0
60
100
20
40
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
80
1
10
10
-1
10
-2
10
-3
Si4830ADY
Vishay Siliconix
Document Number: 72021
S-32621--Rev. D, 29-Dec-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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