FEATURES
D TrenchFETr Power MOSFET
D New PowerPAKr Package
- Low Thermal Resistance, R
thJC
- Low 1.07-mm Profile
APPLICATIONS
D Load Switch
Si7413DN
Vishay Siliconix
New Product
Document Number: 72616
S-32519--Rev. A, 08-Dec-03
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
0.015 @ V
GS
= -4.5 V
-13.2
-20
0.020 @ V
GS
= -2.5 V
-11.4
0.029 @ V
GS
= -1.8 V
-9.5
P-Channel MOSFET
G
D
S
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7413DN-T1--E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
"8
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
-13.2
-8.4
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 85_C
I
D
-9.5
-6.1
A
Pulsed Drain Current
I
DM
-30
A
Continuous Source Current (Diode Conduction)
a
I
S
-3.2
-1.3
Maximum Power Dissipation
a
T
A
= 25_C
P
D
3.8
1.5
W
Maximum Power Dissipation
a
T
A
= 85_C
P
D
2.0
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t v 10 sec
R
26
33
Maximum Junction-to-Ambient
a
Steady State
R
thJA
65
81
_C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.9
2.4
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si7413DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72616
S-32519--Rev. A, 08-Dec-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -400 mA
-0.4
-1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "8
V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20 V, V
GS
= 0 V
-1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20 V, V
GS
= 0 V, T
J
= 85_C
-5
mA
On-State Drain Current
a
I
D(on)
V
DS
v -5 V, V
GS
= -4.5 V
-30
A
V
GS
= -4.5 V, I
D
= -13.2 A
0.012
0.015
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -11.4 A
0.016
0.020
W
DS(on)
V
GS
= -1.8 V, I
D
= -3.5 A
0.023
0.029
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -13.2 A
47
S
Diode Forward Voltage
a
V
SD
I
S
= -3.2 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
34
51
Gate-Source Charge
Q
gs
V
DS
= -10 V,
V
GS
= -4.5 V, I
D
= -13.2 A
5.4
nC
Gate-Drain Charge
Q
gd
8.8
Gate Resistance
R
g
f = 1 MHz
5
W
Turn-On Delay Time
t
d(on)
30
45
Rise Time
t
r
V
DD
= -10 V, R
L
= 10 W
50
75
Turn-Off Delay Time
t
d(off)
V
DD
= -10 V, R
L
= 10 W
I
D
^ -1 A, V
GEN
= -4.5 V, R
g
= 6 W
200
300
ns
Fall Time
t
f
95
140
Source-Drain Reverse Recovery Time
t
rr
I
F
= -3.2 A, di/dt = 100 A/ms
35
55
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
25
30
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0
5
10
15
20
25
30
0
1
2
3
4
5
V
GS
= 5 thru 2 V
25_C
T
C
= 125_C
1 V
-55_C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
Si7413DN
Vishay Siliconix
New Product
Document Number: 72616
S-32519--Rev. A, 08-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
V
SD
- Source-to-Drain Voltage (V)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
1
2
3
4
5
-
On-Resistance (
r
DS(on)
W
)
V
GS
- Gate-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0.05
0
5
10
15
20
25
30
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
1000
2000
3000
4000
5000
0
4
8
12
16
20
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 13.2 A
V
GS
= 4.5 V
I
D
= 13.2 A
V
GS
= 1.8 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
T
J
= 150_C
T
J
= 25_C
I
D
= 13.2 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
Source Current (A)
I
S
V
GS
= 4.5 V
V
GS
= 2.5 V
I
D
= 3.5 A
Si7413DN
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72616
S-32519--Rev. A, 08-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
0.01
0
1
40
50
10
600
Single Pulse Power, Juncion-To-Ambient
Time (sec)
30
20
Power (W)
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.1
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 400 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
10
100
Safe Operating Area, Junction-To-Ambient
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
A
= 25_C
Single Pulse
-
Drain Current (A)
I
D
P(t) = 10
dc
0.1
I
D(on)
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
I
DM
Limited
Si7413DN
Vishay Siliconix
New Product
Document Number: 72616
S-32519--Rev. A, 08-Dec-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
PDF 
ZIP