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TSOP22..WE1
Document Number 82092
Rev. 1.6, 31-Jan-05
Vishay Semiconductors
www.vishay.com
1
16646
IR Receiver Modules for Remote Control Systems
Description
The TSOP22..WE1 - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP22..WE1 is the
standard IR remote control receiver series, support-
ing all major transmission codes.
Features
Photo detector and preamplifier in one
package
Internal filter for PCM frequency
Improved shielding against electrical
field disturbance
TTL and CMOS compatibility
Output active low
Low power consumption
Special Features
Improved immunity against ambient light
Suitable burst length
10 cycles/burst
Parts Table
Block Diagram
Application Circuit
Part
Carrier Frequency
TSOP2230WE1
30 kHz
TSOP2233WE1
33 kHz
TSOP2236WE1
36 kHz
TSOP2237WE1
36.7 kHz
TSOP2238WE1
38 kHz
TSOP2240WE1
40 kHz
TSOP2256WE1
56 kHz
30 k
2
3
1
V
S
OUT
Demo-
GND
Pass
AGC
Input
PIN
Band
dulator
Control Circuit
16835
C
1
=
4.7 F
TSOPxxxx
OUT
GND
Circuit
C
R
1
= 100
+V
S
GND
Transmitter
with
TSALxxxx
V
S
R
1
+ C
1
recommended to suppress power supply
disturbances.
V
O
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
16842
e3
www.vishay.com
2
Document Number 82092
Rev. 1.6, 31-Jan-05
TSOP22..WE1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Electrical and Optical Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Supply Voltage
(Pin 2)
V
S
- 0.3 to + 6.0
V
Supply Current
(Pin 2)
I
S
5
mA
Output Voltage
(Pin 1)
V
O
- 0.3 to + 6.0
V
Output Current
(Pin 1)
I
O
5
mA
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
- 25 to + 85
C
Operating Temperature Range
T
amb
- 25 to + 85
C
Power Consumption
(T
amb
85 C)
P
tot
50
mW
Soldering Temperature
t
5 s
T
sd
260
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Supply Current (Pin 2)
V
S
= 5 V, E
v
= 0
I
SD
0.8
1.2
1.5
mA
V
S
= 5 V, E
v
= 40 klx, sunlight
I
SH
1.5
mA
Supply Voltage (Pin 2)
V
S
4.5
5.5
V
Transmission Distance
E
v
= 0, test signal see fig.1, IR
diode TSAL6200, I
F
= 250 mA
d
35
m
Output Voltage Low (Pin 1)
I
OL
= 0.5 mA, E
e
= 0.7 mW/m
2
, f
= f
o
V
OL
250
mV
Minimum Irradiance (30 - 40
kHz)
Pulse width tolerance: t
pi
- 6/f
o
<
t
po
< t
pi
+ 5/f
o
, test signal see
fig.1
E
e min
0.2
0.5
mW/m
2
Minimum Irradiance (56 kHz)
Pulse width tolerance: t
pi
- 6/f
o
<
t
po
< t
pi
+ 5/f
o
, test signal see
fig.1
E
e min
0.3
0.7
mW/m
2
Maximum Irradiance
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
E
e max
30
W/m
2
Directivity
Angle of half transmission
distance
1/2
45
deg
TSOP22..WE1
Document Number 82092
Rev. 1.6, 31-Jan-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*
t
* t
pi
w 10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
Output Signal
t
d
1 )
t
po
2 )
1 )
7/f
0
< t
d
< 15/f
0
2 )
t
pi
5/f
0
< t
po
< t
pi
+6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
100.0 1000.010000.0
E
e
Irradiance ( mW/m
2
)
16908
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
Output Pulse
t Output Pulse Width ( ms )
po
E
e
t
V
O
V
OH
V
OL
t
600
ms
600
ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T
,T
Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
100.0 1000.010000.0
E
e
Irradiance ( mW/m
2
)
16909
Toff
l = 950 nm,
optical test signal, fig.3
Ton
on
off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7
0.9
1.1
1.3
f/f
0
Relative Frequency
16925
f = f
0
"5%
Df ( 3dB ) = f
0
/10
E / E Rel. Responsivity
e min
e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
0.10
1.00
10.00
100.00
E Ambient DC Irradiance (W/m
2
)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient,
l = 950 nm
E
Threshold Irradiance ( mW/m )
e min
2
www.vishay.com
4
Document Number 82092
Rev. 1.6, 31-Jan-05
TSOP22..WE1
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E
Threshold Irradiance ( mW/m )
e min
2
f = 1 kHz
f = 100 Hz
E
Threshold Irradiance ( mW/m )
0.0
0.4
0.8
1.2
1.6
0.0
0.4
0.8
1.2
2.0
E Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min
2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
20
40
60
80
100
120
Burst Length ( number of cycles / burst )
16913
f = 38 kHz, E
e
= 2 mW/m
2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Directivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
30 15
0
15
30
45
60
75
90
T
amb
Ambient Temperature ( C )
16918
Sensitivity in dark ambient
E
Threshold Irradiance ( mW/m )
e min
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750
850
950
1050
1150
- Wavelength ( nm )
16919
S(
)
-
Relative
Spectral
Sensitivity
rel
96 12223p2
0.4
0.2
0
0.2
0.4
0.6
0.6
0.9
0
30
10
20
40
50
60
70
80
1.0
0.8
0.7
d
rel
Relative Transmission Distance
TSOP22..WE1
Document Number 82092
Rev. 1.6, 31-Jan-05
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP22..WE1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
Burst length should be 10 cycles/burst or longer.
After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP22..WE1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP22..WE1 are:
DC light (e.g. from tungsten bulb or sunlight)
Continuous signal at 38 kHz or at any other fre-
quency
Signals from fluorescent lamps with electronic bal-
last with high or low modulation ( see Figure 13 or Fig-
ure 14 ).
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
0
5
10
15
20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
Time ( ms )
16921
IR Signal
IR Signal from fluorescent
lamp with high modulation