BYS1290
Vishay
Semiconductors
1 (4)
Rev. 3, 08-Sep-00
www.vishay.com
Document Number 86015
Schottky Barrier Rectifier
Features
D
High efficiency
D
Low power losses
D
Very low switching losses
D
Low reverse current
D
High surge capability
Applications
Polarity protection
Low voltage, high frequency rectifiers
15 811
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage=
Repetitive peak reverse voltage
V
R
=
V
RRM
90
V
Peak forward surge current
t
p
=10ms, half sinewave
I
FSM
30
A
Average forward current
I
FAV
1.5
A
Junction and storage
temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction lead
T
L
=constant
R
thJL
25
mounted on epoxyglass hard tissue
150
K/W
Junction ambient
mounted on epoxyglass hard tissue, 50mm
2
35
m
m Cu
R
thJA
125
K/W
mounted on Aloxidceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
thJA
100
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=1A
V
750
mV
Forward voltage
I
F
=15mA
V
F
360
mV
Reverse current
V
R
=V
RRM
I
R
100
m
A
Reverse current
V
R
=V
RRM
, T
j
=100
C
I
R
1
mA
BYS1290
Vishay
Semiconductors
2 (4)
Rev. 3, 08-Sep-00
www.vishay.com
Document Number 86015
Characteristics (T
j
= 25
_
C unless otherwise specified)
I Forward Current (
A)
0.001
0.010
0.100
1.000
10.000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
16471
F
T
j
= 25
C
T
j
= 150
C
Figure 1. Forward Current vs. Forward Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100 120 140 160
T
amb
Ambient Temperature (
C )
16472
I
A
verage
Forward
Current
(
A
)
FA
V
V
R
= V
R RM
half sinewave
R
thJA
v25K/W
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
0
0.4
0.8
1.2
1.6
2.0
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
95 9723
40
80
120
160
200
V
R
= 0 V, Half Sinewave
100K/W
125K/W
150K/W
R
thJA
=25K/W
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
100
1000
10000
100000
25
50
75
100
125
150
T
j
Junction Temperature (
C )
16473
V
R
= V
RRM
m
I Reverse Current (
A
)
R
Figure 4. Reverse Current vs. Junction Temperature
0
500
1000
1500
2000
2500
25
50
75
100
125
150
T
j
Junction Temperature (
C )
16474
V
R
= V
RRM
P
Reverse Power Dissipation ( mW
)
R
P
R
Limit
@100%V
R
Figure 5. Max. Reverse Power Dissipation vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
180
0.1
1.0
10.0
100.0
V
R
Reverse Voltage ( V )
16475
C Diode Capacitance ( pF )
D
f=1MHz
Figure 6. Diode Capacitance vs. Reverse Voltage
BYS1290
Vishay
Semiconductors
4 (4)
Rev. 3, 08-Sep-00
www.vishay.com
Document Number 86015
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-
Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-
Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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