BFG93A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 11-Nov-99
1 (4)
Document Number 85076
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
13 579
2
1
4
3
94 9279
BFG93A Marking: R8
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
2
V
Collector current
I
C
50
mA
Total power dissipation
T
amb
60
C
P
tot
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thJA
450
K/W
BFG93A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 11-Nov-99
2 (4)
Document Number 85076
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Collector cut-off current
V
CE
= 20 V, V
BE
= 0
I
CES
100
m
A
Collector-base cut-off current
V
CB
= 15 V, I
E
= 0
I
CBO
100
nA
Emitter-base cut-off current
V
EB
= 2 V, I
C
= 0
I
EBO
10
m
A
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
V
(BR)CEO
12
V
Collector-emitter saturation voltage
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
0.1
0.4
V
DC forward current transfer ratio
V
CE
= 5 V, I
C
= 30 mA
h
FE
40
90
150
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Transition frequency
V
CE
= 5 V, I
C
= 30 mA, f = 500 MHz
f
T
6
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
0.45
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
0.2
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
1.25
pF
Noise figure
V
CE
= 8 V, Z
S
= 50
W
,
f = 800 MHz, I
C
= 5 mA
F
1.6
dB
V
CE
= 8 V, Z
S
= 50
W
,
f = 800 MHz, I
C
= 25 mA
F
2.1
dB
Power gain
V
CE
= 8 V, Z
S
= 50
W
,
Z
L
= Z
Lopt
, I
C
= 25 mA, f = 800 MHz
G
pe
16
dB
V
CE
= 8 V, Z
S
= 50
W
,
Z
L
= Z
Lopt
, I
C
= 25 mA, f = 2 GHz
G
pe
9
dB
Linear output voltage two
tone intermodulation test
V
CE
= 8 V, I
C
= 25 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
W
V
1
= V
2
260
mV
Third order intercept point
V
CE
= 8 V, I
C
= 25 mA, f = 800 MHz
IP
3
31
dBm
BFG93A
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 11-Nov-99
4 (4)
Document Number 85076
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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