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Электронный компонент: BZX84C12

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BZX84C2V7BZX84C51
Vishay Telefunken
Rev. 1, 01-Apr-99
1 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
350 mW Surface Mount Zener Diodes
Features
D
Planar die construction
D
350 mW Power dissipation
D
Zener voltages from 2.7V 51V
D
Ideally suited for automated assembly processes
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Power dissipation
on ceramic substrate
10mm x 8mm x 0.7mm
P
d
350
mW
Zener current (see figures 13 below)
Junction and storage
temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on ceramic substrate 10mm x 8mm x 0.7mm
R
thJA
420
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward Voltage
I
F
=10 mA
V
F
0.9
V
BZX84C2V7BZX84C51
Vishay Telefunken
Rev. 1, 01-Apr-99
2 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
Type
Marking
V
Z
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
T
C
I
R
@ V
R
BZX84C...
V
W
mA
W
mA
%/
C
m
A
V
@ I
ZT
2V7
KZC
2.5 to 2.9
100
5.0
600
1.0
0.065
20
1.0
3V0
KZD
2.8 to 3.2
100
5.0
600
1.0
0.060
10
1.0
3V3
KZE
3.1 to 3.5
95
5.0
600
1.0
0.055
5.0
1.0
3V6
KZF
3.4 to 3.8
95
5.0
600
1.0
0.055
5.0
1.0
3V9
KZG
3.7 to 4.1
90
5.0
600
1.0
0.050
3.0
1.0
4V3
KZH
4.0 to 4.6
90
5.0
600
1.0
0.035
3.0
1.0
4V7
KZ1
4.4 to 5.0
80
5.0
500
1.0
0.015
4.0
2.0
5V1
KZ2
4.8 to 5.4
60
5.0
480
1.0
+0.005
2.0
2.0
5V6
KZ3
5.2 to 6.0
40
5.0
400
1.0
+0.020
1.0
2.0
6V2
KZ4
5.8 to 6.6
10
5.0
150
1.0
+0.030
3.0
4.0
6V8
KZ5
6.4 to 7.2
15
5.0
80
1.0
+0.045
2.0
4.0
7V5
KZ6
7.0 to 7.9
15
5.0
80
1.0
+0.050
1.0
5.0
8V2
KZ7
7.7 to 8.7
15
5.0
80
1.0
+0.055
0.7
5.0
9V1
KZ8
8.5 to 9.6
15
5.0
100
1.0
+0.065
0.5
6.0
10
KZ9
9.4 to 10.6
20
5.0
150
1.0
+0.065
0.2
7.0
11
KY1
10.4 to 11.6
20
5.0
150
1.0
+0.070
0.1
8.0
12
KY2
11.4 to 12.7
25
5.0
150
1.0
+0.075
0.1
8.0
13
KY3
12.4 to 14.1
30
5.0
170
1.0
+0.080
0.1
8.0
15
KY4
13.8 to 15.6
30
5.0
200
1.0
+0.080
0.05
0.7V
Znom
16
KY5
15.3 to 17.1
40
5.0
200
1.0
+0.090
0.05
0.7V
Znom
18
KY6
16.8 to 19.1
45
5.0
225
1.0
+0.090
0.05
0.7V
Znom
20
KY7
18.8 to 21.2
55
5.0
225
1.0
+0.090
0.05
0.7V
Znom
22
KY8
20.8 to 23.3
55
5.0
250
1.0
+0.090
0.05
0.7V
Znom
24
KY9
22.8 to 25.6
70
5.0
250
1.0
+0.090
0.05
0.7V
Znom
27
KYA
25.1 to 28.9
80
2.0
300
0.5
+0.090
0.05
0.7V
Znom
30
KYB
28 to 32
80
2.0
300
0.5
+0.090
0.05
0.7V
Znom
33
KYC
31 to 35
80
2.0
325
0.5
+0.090
0.05
0.7V
Znom
36
KYD
34 to 38
90
2.0
350
0.5
+0.090
0.05
0.7V
Znom
39
KYE
37 to 41
130
2.0
350
0.5
+0.110
0.05
0.7V
Znom
43
KYF
40 to 46
150
2.0
375
0.5
+0.110
0.05
0.7V
Znom
47
KYG
44 to 50
170
2.0
375
0.5
+0.110
0.05
0.7V
Znom
51
KYH
48 to 54
180
2.0
400
0.5
+0.110
0.05
0.7V
Znom
1) Device mounted on ceramic substrate 8mmx10mmx0.7mm
2) V
Z
measured at I
ZT
using a pulse test. I
Z
pulse width = 5 ms. Standard voltage tolerance is 5%.
BZX84C2V7BZX84C51
Vishay Telefunken
Rev. 1, 01-Apr-99
3 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
T
j
=25
C
5.0mA
I Z-Current ( mA
)
Z
V
Z
Z-Voltage ( V )
15251
C3V9
C5V6
C6V8
C4V7
C3V3
Test Current I
z
C8V2
C2V7
Figure 1. ZCurrent vs. ZVoltage
0
10
20
30
0
10
20
30
40
I Z-Current ( mA
)
Z
V
Z
Z-Voltage ( V )
15252
T
j
=25
C
5.0mA
Test Current I
z
2.0mA
Test Current I
z
C10
C22
C27
C33
C36
C15
C12
C18
Figure 2. ZCurrent vs. ZVoltage
0
2
4
6
8
10
10
20 30 40 50 60 70
80 90 100
2.0mA
Test Current I
z
I Z-Current ( mA
)
Z
V
Z
Z-Voltage ( V )
15253
0
T
j
=25
C
C39
C43
C47
C51
Figure 3. ZCurrent vs. ZVoltage
400
See Note 1
200
100
300
0
500
0
100
200
P
T
otal
Power
Dissipation
(
mW
)
T
amb
Ambient Temperature (
C )
15254
tot
Figure 4. Total Power Dissipation vs.
Ambient Temperature
10
100
1000
10
100
1
C Diode Capacitance ( pF )
V
Z
Z-Voltage ( V )
15255
D
T
j
=25
C
V
R
= 1V
V
R
= 2V
V
R
= 2V
V
R
= 1V
Figure 5. Diode Capacitance vs. ZVoltage
BZX84C2V7BZX84C51
Vishay Telefunken
Rev. 1, 01-Apr-99
4 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
Dimensions in mm
14370
top view
Case: SOT23, molded plastic
Mounting position: any
Approx. weight: 0.008 grams
BZX84C2V7BZX84C51
Vishay Telefunken
Rev. 1, 01-Apr-99
5 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423