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Электронный компонент: BZX85C27

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BZX85C...
Vishay Telefunken
Rev. 3, 01-Apr-99
1 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85608
Silicon Epitaxial Planar ZDiodes
Features
D
Sharp edge in reverse characteristics
D
Low reverse current
D
Low noise
D
Very high stability
D
Available with tighter tolerances
Applications
Voltage stabilization
94 9369
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Power dissipation
l=4mm, T
L
=25
C
P
V
1.3
W
Junction temperature
T
j
175
C
Storage temperature range
T
stg
65...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, T
L
=constant
R
thJA
110
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=200mA
V
F
1
V
BZX85C...
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (5)
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Document Number 85608
Type
V
Znom
I
ZT
for V
ZT
and r
zjT
r
zjk
at I
ZK
I
R
at V
R
TK
VZ
BZX85C...
V
mA
V
1)
W
W
mA
m
A
V
%/K
2V7
2.7
80
2.5 to 2.9
< 20
< 400
1
< 150
1
0.08 to 0.05
3V0
3.0
80
2.8 to 3.2
< 20
< 400
1
< 100
1
0.08 to 0.05
3V3
3.3
80
3.1 to 3.5
< 20
< 400
1
< 40
1
0.08 to 0.05
3V6
3.6
60
3.4 to 3.8
< 20
< 500
1
< 20
1
0.08 to 0.05
3V9
3.9
60
3.7 to 4.1
< 15
< 500
1
< 10
1
0.07 to 0.02
4V3
4.3
50
4.0 to 4.6
< 13
< 500
1
< 3
1
0.07 to 0.01
4V7
4.7
45
4.4 to 5.0
< 13
< 500
1
< 3
1
0.03 to +0.04
5V1
5.1
45
4.8 to 5.4
< 10
< 500
1
< 1
1.5
0.01 to +0.04
5V6
5.6
45
5.2 to 6.0
< 7
< 400
1
< 1
2
0 to +0.045
6V2
6.2
35
5.8 to 6.6
< 4
< 300
1
< 1
3
+0.01 to +0.055
6V8
6.8
35
6.4 to 7.2
< 3.5
< 300
1
< 1
4
+0.015 to +0.06
7V5
7.5
35
7.0 to 7.9
< 3
< 200
0.5
< 1
4.5
+0.02 to +0.065
8V2
8.2
25
7.7 to 8.7
< 5
< 200
0.5
< 1
6.2
0.03 to 0.07
9V1
9.1
25
8.5 to 9.6
< 5
< 200
0.5
< 1
6.8
0.035 to 0.075
10
10
25
9.4 to 10.6
< 7
< 200
0.5
< 0.5
7.5
0.04 to 0.08
11
11
20
10.4 to 11.6
< 8
< 300
0.5
< 0.5
8.2
0.045 to 0.08
12
12
20
11.4 to 12.7
< 9
< 350
0.5
< 0.5
9.1
0.045 to 0.085
13
13
20
12.4 to 14.1
< 10
< 400
0.5
< 0.5
10
0.05 to 0.085
15
15
15
13.8 to 15.6
< 15
< 500
0.5
< 0.5
11
0.055 to 0.09
16
16
15
15.3 to 17.1
< 15
< 500
0.5
< 0.5
12
0.055 to 0.09
18
18
15
16.8 to 19.1
< 20
< 500
0.5
< 0.5
13
0.06 to 0.09
20
20
10
18.8 to 21.2
< 24
< 600
0.5
< 0.5
15
0.06 to 0.09
22
22
10
20.8 to 23.3
< 25
< 600
0.5
< 0.5
16
0.06 to 0.095
24
24
10
22.8 to 25.6
< 25
< 600
0.5
< 0.5
18
0.06 to 0.095
27
27
8
25.1 to 28.9
< 30
< 750
0.25
< 0.5
20
0.06 to 0.095
30
30
8
28 to 32
< 30
< 1000
0.25
< 0.5
22
0.06 to 0.095
33
33
8
31 to 35
< 35
< 1000
0.25
< 0.5
24
0.06 to 0.095
36
36
8
34 to 38
< 40
< 1000
0.25
< 0.5
27
0.06 to 0.095
39
39
6
37 to 41
< 50
< 1000
0.25
< 0.5
30
0.06 to 0.095
43
43
6
40 to 46
< 50
< 1000
0.25
< 0.5
33
0.06 to 0.095
47
47
4
44 to 50
< 90
< 1500
0.25
< 0.5
36
0.06 to 0.095
51
51
4
48 to 54
< 115
< 1500
0.25
< 0.5
39
0.06 to 0.095
56
56
4
52 to 60
< 120
< 2000
0.25
< 0.5
43
0.06 to 0.095
62
62
4
58 to 66
< 125
< 2000
0.25
< 0.5
47
0.06 to 0.095
68
68
4
64 to 72
< 130
< 2000
0.25
< 0.5
51
0.06 to 0.095
75
75
4
70 to 79
< 135
< 2000
0.25
< 0.5
56
0.06 to 0.095
1)
Tighter tolerances available on request:
BZX85B...
2% of V
Znom
BZX85C...
Vishay Telefunken
Rev. 3, 01-Apr-99
3 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85608
Characteristics (T
j
= 25
_
C unless otherwise specified)
50
0
0.4
0.8
1.2
1.6
2.0
95 9612
0
50
100
150
P
T
otal Power Dissipation (
W
)
tot
T
amb
Ambient Temperature (
C )
200
l=4mm
l=10mm
l=20mm
Figure 1. Total Power Dissipation vs. Ambient Tempera-
ture
0
5
10
15
20
0
50
100
150
200
250
30
95 9613
R
Therm. Resist. Junction /
Ambient ( K/W
)
thJA
l Lead Length ( mm )
25
l
l
T
L
=constant
Figure 2. Thermal Resistance vs. Lead Length
0
10
20
30
40
1
10
100
1000
60
95 9616
C Diode Capacitance ( pF )
D
V
Z
Z-Voltage ( V )
50
f = 1 MHz
T
amb
= 25
C
V
R
= 30V
V
R
= 20V
V
R
= 5V
V
R
= 2V
V
R
= 0V
Figure 3. Diode Capacitance vs. ZVoltage
1
10
100
95 9615
1
10
100
1000
r Dif
ferential Z-Resistance ( )
Z
V
Z
Z-Voltage ( V )
W
I
Z
=1mA
5mA
10mA
2mA
20mA
Figure 4. Differential ZResistance vs. ZVoltage
1
10
100
1000
Z
Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
Pulse Length ( ms )
95 9614
10
1
10
0
10
1
10
2
10
3
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
Single Pulse
R
thJA
=110K/W
DT=T
jmax
T
amb
i
ZM
=(V
Z
+(V
Z
2
+4r
zj
DT/Z
thp
)
1/2
)/(2r
zj
)
Figure 5. Thermal Response
BZX85C...
Vishay Telefunken
Rev. 3, 01-Apr-99
4 (5)
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FaxBack +1-408-970-5600
Document Number 85608
Dimensions in mm
Cathode Identification
2.5 max.
0.85 max.
4.1 max.
26 min.
94 9368
technical drawings
according to DIN
specifications
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3 g
26 min.
BZX85C...
Vishay Telefunken
Rev. 3, 01-Apr-99
5 (5)
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Document Number 85608
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423