LL4148 / LL4448
Document Number 85557
Rev. 1.8, 24-Mar-06
Vishay Semiconductors
www.vishay.com
1
94 9371
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diodes
Electrical data identical with the devices
1N4148 and 1N4448 respectively
Lead (Pb)-free component
Component in acc. to RoHS 2002/95/EC and
WEEE 2002/96/EC
Applications
Extreme fast switches
Mechanical Data
Case: MiniMELF Glass case (SOD80)
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Thermal Characteristics
T
amb
= 25 C, unless otherwise specified
Part
Type differentiation
Ordering code
Remarks
LL4148
V
RRM
= 100 V, V
F
= max. 1000 mV at I
F
= 50 mA
LL4148-GS18 or LL4148-GS08
Tape and Reel
LL4448
V
RRM
= 100 V, V
F
= max. 1000 mV at I
F
= 100 mA
LL4448-GS18 or LL4448-GS08
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
100
V
Reverse voltage
V
R
75
V
Peak forward surge current
t
p
= 1 s
I
FSM
2
A
Repetitive peak forward current
I
FRM
500
mA
Forward continuous current
I
F
300
mA
Average forward current
V
R
= 0
I
FAV
150
mA
Power dissipation
P
V
500
mW
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500
K/W
Junction temperature
T
j
175
C
Storage temperature range
T
stg
- 65 to + 175
C
e2
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Document Number 85557
Rev. 1.8, 24-Mar-06
LL4148 / LL4448
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Typical Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 5 mA
LL4448
V
F
620
720
mV
I
F
= 50 mA
LL4148
V
F
860
1000
mV
I
F
= 100 mA
LL4448
V
F
930
1000
mV
Reverse current
V
R
= 20 V
I
R
25
nA
V
R
= 20 V, T
j
= 150 C
I
R
50
A
V
R
= 75 V
I
R
5
A
Breakdown voltage
I
R
= 100 A, t
p
/T = 0.01,
t
p
= 0.3 ms
V
(BR)
100
V
Diode capacitance
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
C
D
4
pF
Rectification efficiency
V
HF
= 2 V, f = 100 MHz
r
45
%
Reverse recovery time
I
F
= I
R
= 10 mA,
i
R
= 1 mA
t
rr
8
ns
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
t
rr
4
ns
Figure 1. Forward Current vs. Forward Voltage
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
-
For
w
ard
C
u
rrent (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9096
LL4148
Scattering Limit
T
j
= 25 C
Figure 2. Forward Current vs. Forward Voltage
94 9097
T
j
= 25
C
LL4448
Scattering Limit
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
-
For
w
ard
C
u
rrent (mA)
F
V
F
- Forward Voltage (V)
2.0
LL4148 / LL4448
Document Number 85557
Rev. 1.8, 24-Mar-06
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 3. Reverse Current vs. Reverse Voltage
1
10
100
1000
I-
Re
v
erse C
u
rrent (nA)
R
V
R
- Reverse Voltage (V)
10
1 100
94 9098
T
j
= 25 C
Scattering Limit
Figure 4. Diode Capacitance vs. Reverse Voltage
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
C
-
Diode
Capacitance (pF)
D
100
94 9099
2.5
V
R
- Reverse Voltage (V)
T
f = 1 MHz
j
= 25 C
96 12070
3.7 (0.146)
3.3 (0.130)
0.47 max. (0.019)
Cathode indification
2.5 (0.098) max
5.0 (0.197) ref
1.25 (0.049) min
2.0 (0.079) min
1.6 (0.063)
1.4 (0.055)
Document no.: 6.560-5005.01-4
Rev. 7 - Date: 07.February.2005
foot print recommendation:
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4
Document Number 85557
Rev. 1.8, 24-Mar-06
LL4148 / LL4448
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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