VISHAY
TCET111.(G)
Document Number 83546
Rev. A3, 18-Mar-03
Vishay Semiconductors
www.vishay.com
1
Coll.
Emitter
Anode Cath.
C
17918
1
Optocoupler with Phototransistor Output
\
Features
CTR offered in 9 Groups
Isolation materials according to UL94-VO
Pollution degree 2
(DIN/VDE 0110 / resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction:
Therefore, extra low coupling capacity of typical
0.2 pF, high Common Mode Rejection
Low temperature coefficient of CTR
Temperature range - 40 to + 110 C
Coupling System U
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV
peak
Isolation test voltage (partial discharge test volt-
age) V
pd
= 1.6 kV
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V
peak
)
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
Creepage current resistance according to VDE
0303/IEC 112 Comparative Tracking Index:
CTI
175
Thickness through insulation
0.75 mm
Internal creepage distance > 4 mm
External creepage distance > 8 mm
Agency Approvals
BSI: EN 60065:2002, EN 60950:2000
Certificate number 7081 and 7402
FIMKO (SETI): EN 60950:2000
Certificate number FI 18973
Underwriters Laboratory (UL)
File number E 76222
VDE IEC 60747
Certificate number 115667
Applications
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced iso-
lation):
For appl. class I - IV at mains voltage
300 V
For appl. class I - III at mains voltage
600 V accord-
ing to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, com-
puter peripheral interface, microprocessor sys-
tem interface, with operating temperature up to
110C
Description
The TCET111.(G) consists of a phototransistor opti-
cally coupled to a gallium arsenide infrared-emitting
diode in a 4-lead plastic dual inline package.
The elements are mounted on one lead frame using a
coplanar technique, providing a fixed distance
between input and output for highest safety require-
ments.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
VDE 0884 / IEC 60747:2003
Optocoupler for electrical safety requirements
IEC 60950
Office machines (applied for reinforced isolation for
mains voltage < 400 V
RMS
)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related
household apparatus
www.vishay.com
2
Document Number 83546
Rev. A3, 18-Mar-03
VISHAY
TCET111.(G)
Vishay Semiconductors
Order Information
G = Lead form 10.16 mm; G is not marked on the body,
4 Pin = Single Channel
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Emitter
Detector
Coupler
Part
Remarks
TCET1110 (G)
50 to 600 %
TCET1111 (G)
40 to 80 %
TCET1112 (G)
63 to 125 %
TCET1113 (G)
100 to 200 %
TCET1114 (G)
160 to 320 %
TCET1115 (G)
50 to 150 %
TCET1116 (G)
100 to 300 %
TCET1117 (G)
80 to 160 %
TCET1118 (G)
130 to 260 %
TCET1119 (G)
200 to 400 %
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10 s
I
FSM
1.5
A
Power dissipation
P
Diss
100
mW
Junction temperature
T
j
125
C
Parameter
Test condition
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
P
Diss
150
mW
Junction temperature
T
j
125
C
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
V
IO
5
kV
Total power dissipation
P
tot
250
mW
Operating ambient temperature
range
T
amb
- 40 to + 110
C
Storage temperature range
T
stg
- 55 to + 125
C
Soldering temperature
2 mm from case t
10 s
T
sd
260
C
VISHAY
TCET111.(G)
Document Number 83546
Rev. A3, 18-Mar-03
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Emitter
Detector
Coupler
Current Transfer Ratio
Parameter
Test condition
Symbol
Typ.
Max
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
70
V
Emitter collector voltage
I
E
= 100
A
V
ECO
7
V
Collector emitter cut-off current
V
CE
= 20 V, I
f
= 0, E = 0
I
CEO
10
100
nA
Parameter
Test condition
Symbol
Typ.
Max
Unit
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
f
c
110
kHz
Coupling capacitance
f = 1 MHz
C
k
0.3
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
TCET1111 (G)
CTR
0.13
0.30
%
V
CE
= 5 V, I
F
= 1 mA
TCET1112 (G)
CTR
0.22
0.45
%
V
CE
= 5 V, I
F
= 1 mA
TCET1113 (G)
CTR
0.34
0.70
%
V
CE
= 5 V, I
F
= 1 mA
TCET1114 (G)
CTR
0.56
0.90
%
V
CE
= 5 V, I
F
= 5 mA
TCET1110 (G)
CTR
0.50
6.0
%
V
CE
= 5 V, I
F
= 5 mA
TCET1115 (G)
CTR
0.5
1.5
%
V
CE
= 5 V, I
F
= 5 mA
TCET1116 (G)
CTR
1.0
3.0
%
V
CE
= 5 V, I
F
= 5 mA
TCET1117 (G)
CTR
0.8
1.6
%
V
CE
= 5 V, I
F
= 5 mA
TCET1118 (G)
CTR
1.3
2.6
%
V
CE
= 5 V, I
F
= 5 mA
TCET1119 (G)
CTR
2.0
4.0
%
V
CE
= 5 V, I
F
= 10 mA
TCET1111 (G)
CTR
0.40
0.8
%
V
CE
= 5 V, I
F
= 10 mA
TCET1112 (G)
CTR
0.63
1.25
%
V
CE
= 5 V, I
F
= 10 mA
TCET1113 (G)
CTR
1.0
2.0
%
V
CE
= 5 V, I
F
= 10 mA
TCET1114 (G)
CTR
1.6
3.2
%
www.vishay.com
4
Document Number 83546
Rev. A3, 18-Mar-03
VISHAY
TCET111.(G)
Vishay Semiconductors
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Emitter
Detector
Coupler
Insulation Rated Parameters
Parameter
Symbol
Max
Unit
Forward current
I
F
130
mA
Parameter
Symbol
Max
Unit
Power dissipation
P
Diss
265
mW
Parameter
Symbol
Max
Unit
Rated impulse voltage
V
IOTM
8
kV
Safety temperature
T
si
150
C
Parameter
Test condition
Symbol
Min
Unit
Partial discharge test voltage -
Routine test
100 %, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage -
Lot test (sample test), (see
figure 2)
t
Tr
= 60 s, t
test
= 10 s
V
IOTM
8
kV
t
Tr
= 60 s, t
test
= 10 s
V
pd
1.3
kV
Insulation resistance
V
IO
= 500 V
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
V
IO
= 500 V, T
amb
= 150 C
(construction test only)
R
IO
10
9
Figure 1. Derating diagram
0
25
50
75
125
0
50
100
150
200
300
P
T
otal Power Dissipation ( mW )
tot
T
si
Safety Temperature (
C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 2. Test pulse diagram for sample test according to DIN VDE
0884; IEC60747
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
VISHAY
TCET111.(G)
Document Number 83546
Rev. A3, 18-Mar-03
Vishay Semiconductors
www.vishay.com
5
Switching Characteristics
Parameter
Test condition
Symbol
Typ.
Unit
Delay time (see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
t
d
3.0
s
Rise time (see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
t
r
3.0
s
Turn-on time (see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
t
on
6.0
s
Storage time (see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
t
s
0.3
s
Fall time (see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
t
f
4.7
s
Turn-off time (see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
t
off
5.0
s
Turn-on time see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
t
on
9.0
s
Turn-off time see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
t
off
10.0
s
Figure 3. Test circuit, non-saturated operation
Figure 4. Test circuit, saturated operation
Channel I
Channel II
95 10804
R
G
= 50
W
t
p
t
p
= 50 s
T
= 0.01
+ 5 V
I
F
0
50
W
100
W
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 M
W
C
L
= 20 pF
Channel I
Channel II
95 10843
R
G
= 50
W
t
p
t
p
= 50 s
T
= 0.01
+ 5 V
I
C
I
F
0
50
W
1 k
W
I
F
= 10 mA
Oscilloscope
R
L
1 M
W
C
L
20 pF
Figure 5. Switching times
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
PDF 
ZIP