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Электронный компонент: TCLD1000

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TCLD10.. Series
Vishay
Semiconductors
1 (10)
www.vishay.com
Document Number 83516
Rev. A3, 19Mar01
Optocoupler with Photodarlington Output
Description
The TCLD10.. Series consists of a darlington
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead SO6L package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II (reinforced
isolation):
D
For appl. class I IV at mains voltage
300 V
D
For appl. class I III at mains voltage
600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
(will be replaced by IEC 74751.2.3)
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage
400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
15231
4
3
1
2
15245
C
Order Instruction
Ordering Code
CTR Ranking
Remarks
TCLD1000
>600%
4 Pin = Single channel
TCLD10.. Series
Vishay
Semiconductors
www.vishay.com
2 (10)
Rev. A3, 19Mar01
Document Number 83516
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 Double Protection
D
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
D
VDE 0884, Certificate number 132473
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according
to VDE 0303/IEC 112
Comparative Tracking Index: CTI
175
D
Thickness through insulation
0.75 mm
D
Creepage distance > 8 mm
D
Tested acc. 60950: Am4: 1997 clause 2.9.6.
General features:
D
Low profile package
D
Darlington output
D
Isolation materials according to UL94-VO
D
Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
Coupling System W
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
1.5
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
125
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
35
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
80
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
125
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
V
IO
5
kV
Total power dissipation
T
amb
25
C
P
tot
250
mW
Operating ambient temperature range
T
amb
40 to +100
C
Storage temperature range
T
stg
40 to +100
C
Soldering temperature
T
sd
235
C
TCLD10.. Series
Vishay
Semiconductors
3 (10)
www.vishay.com
Document Number 83516
Rev. A3, 19Mar01
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
=
50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
35
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector emitter cut-off
current
V
CE
= 20 V, I
f
= 0, E = 0
I
CEO
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
W
f
c
10
kHz
Coupling capacitance
f = 1 MHz
C
k
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 2 V, I
F
= 1 mA
TCLD1000
CTR
6.0
8.0
TCLD10.. Series
Vishay
Semiconductors
www.vishay.com
4 (10)
Rev. A3, 19Mar01
Document Number 83516
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I
si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T
amb
25
C
P
si
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V
IOTM
8
kV
Safety temperature
T
si
150
C
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage
Routine test
100%, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage
t
Tr
= 60 s, t
test
= 10 s,
V
IOTM
8
kV
g
g
Lot test (sample test)
Tr
test
(see figure 2)
V
pd
1.3
kV
Insulation resistance
V
IO
= 500 V
R
IO
10
12
W
V
IO
= 500 V,
T
amb
= 100
C
R
IO
10
11
W
V
IO
= 500 V,
T
amb
= 150
C
(construction test only)
R
IO
10
9
W
0
25
50
75
125
0
50
100
150
200
300
P
T
otal
Power
Dissipation
(
mW
)
tot
T
si
Safety Temperature (
C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
TCLD10.. Series
Vishay
Semiconductors
5 (10)
www.vishay.com
Document Number 83516
Rev. A3, 19Mar01
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Rise time
V
CE
= 2 V, I
C
= 10 mA, R
L
= 100
W
(see figure 1)
t
r
300
m
s
Turn-off time
CE
C
L
(
g
)
t
off
250
m
s
R
L
50
Channel II
Channel I
I
C
= 10 mA;
+V
CC
I
F
I
F
0
R
G
= 50
t
p
t
p
= 50
m
s
T
= 0.01
Oscilloscope
R
I
= 1 M
C
I
= 20 pF
14779
Figure 1. Test circuit, non-saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 2. Switching times
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0.8
0.9
1.0
1.1
1.2
1.3
0
20
40
60
80
100
T
amb
Ambient Temperature (
C )
14389
V
Forward
V
oltage (
V
)
F
I
F
=10mA
Figure 3. Forward Voltage vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
14390
F
I Forward Current ( mA
)
Figure 4. Forward Current vs. Forward Voltage