TCMT11.. Series
Vishay
Semiconductors
1 (12)
www.vishay.com
Document Number 83510
Rev. A2, 15Dec00
Optocoupler with Phototransistor Output
Description
The TCMT11.. Series consist of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in an 4- lead up to 16- lead plastic
Miniflat package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Programmable logic controllers, modems, answering
machines, general applications
Features
D
Low profile package (half pitch)
D
AC Isolation test voltage V
io
= 3.75 kV
RMS
D
Low coupling capacitance of typical 0.3 pF
D
Current Transfer Ratio (CTR) selected into groups
D
Low temperature coefficient of CTR
D
Wide ambient temperature range
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
D
Coupling System M
16467
Coll. Emitter
Anode Cath.
4 PIN
16 PIN
16281
1
2
8
9
C
Order Instruction
Ordering Code
CTR Ranking
Remarks
TCMT1100
50 to 600%
4 Pin = Single channel
TCMT1101
40 to 80%
4 Pin = Single channel
TCMT1102
63 to 125%
4 Pin = Single channel
TCMT1103
100 to 200%
4 Pin = Single channel
TCMT1104
160 to 320%
4 Pin = Single channel
TCMT1105
50 to 150%
4 Pin = Single channel
TCMT1106
100 to 300%
4 Pin = Single channel
TCMT1107
80 to 160%
4 Pin = Single channel
TCMT1108
130 to 260%
4 Pin = Single channel
TCMT1109
200 to 400%
4 Pin = Single channel
TCMT4100
50 to 600%
16 Pin = Quad channel
TCMT11.. Series
Vishay
Semiconductors
www.vishay.com
2 (12)
Rev. A2, 15Dec00
Document Number 83510
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
1.5
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
125
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Peak collector current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
125
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
AC isolation test voltage (RMS)
V
IO
1)
3.75
kV
Total power dissipation
T
amb
25
C
P
tot
250
mW
Operating ambient temperature
range
T
amb
40 to +100
C
Storage temperature range
T
stg
40 to +100
C
Soldering temperature
T
sd
235
C
1)
Related to standard climate 23/50 DIN 50014
TCMT11.. Series
Vishay
Semiconductors
3 (12)
www.vishay.com
Document Number 83510
Rev. A2, 15Dec00
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 100
m
A
V
CEO
70
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector dark current
V
CE
= 20 V, I
F
= 0, E = 0
I
CEO
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
I
F
= 10 mA, V
CE
= 5 V,
R
L
= 100
W
f
c
100
kHz
Coupling capacitance
f = 1 MHz
C
k
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
TCMT1100
CTR
0.5
6.0
C F
V
CE
= 5 V, I
F
= 10 mA
TCMT1101
CTR
0.4
0.8
V
CE
= 5 V, I
F
= 10 mA
TCMT1102
CTR
0.63
1.25
V
CE
= 5 V, I
F
= 10 mA
TCMT1103
CTR
1.0
2.0
V
CE
= 5 V, I
F
= 10 mA
TCMT1104
CTR
1.6
3.2
V
CE
= 5 V, I
F
= 5 mA
TCMT1105
CTR
0.5
1.5
V
CE
= 5 V, I
F
= 5 mA
TCMT1106
CTR
1.0
3.0
V
CE
= 5 V, I
F
= 5 mA
TCMT1107
CTR
0.8
1.6
V
CE
= 5 V, I
F
= 5 mA
TCMT1108
CTR
1.3
2.6
V
CE
= 5 V, I
F
= 5 mA
TCMT1109
CTR
2.0
4.0
V
CE
= 5 V, I
F
= 5 mA
TCMT4100
CTR
0.5
6.0
TCMT11.. Series
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Semiconductors
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4 (12)
Rev. A2, 15Dec00
Document Number 83510
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
W
(see figure 1)
t
d
3.0
m
s
Rise time
S
C
L
(
g
)
t
r
3.0
m
s
Fall time
t
f
4.7
m
s
Storage time
t
s
0.3
m
s
Turn-on time
t
on
6.0
m
s
Turn-off time
t
off
5.0
m
s
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(see figure 2)
t
on
9.0
m
s
Turn-off time
S
F
L
(
g
)
t
off
18.0
m
s
Channel I
Channel II
95 10804
Oscilloscope
R
L
= 1 M
W
C
L
= 20 pF
R
G
= 50
W
t
p
t
p
= 50
m
s
T
= 0.01
+ 5 V
I
C
= 2 mA; adjusted through
input amplitude
I
F
0
I
F
50
W
100
W
Figure 1. Test circuit, non-saturated operation
+ 5 V
I
F
= 10 mA
95 10843
I
C
Channel I
Channel II
Oscilloscope
R
L
> 1 M
W
C
L
< 20 pF
I
F
0
R
G
= 50
W
t
p
t
p
= 50
m
s
T
= 0.01
50
W
1 k
W
Figure 2. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 3. Switching times
TCMT11.. Series
Vishay
Semiconductors
5 (12)
www.vishay.com
Document Number 83510
Rev. A2, 15Dec00
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
50
100
150
200
250
300
0
40
80
120
P
T
otal Power Dissipation ( mW
)
T
amb
Ambient Temperature (
C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 4. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 5. Forward Current vs. Forward Voltage
25
0
25
50
0
0.5
1.0
1.5
2.0
CTR Relative Current
T
ransfer
Ratio
rel
T
amb
Ambient Temperature (
C )
95 11025
75
V
CE
=5V
I
F
=5mA
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
0
25
50
75
1
10
100
1000
10000
I Collector Dark Current,
CEO
T
amb
Ambient Temperature (
C )
100
95 11026
with open Base ( nA
)
V
CE
=20V
I
F
=0
Figure 7. Collector Dark Current vs. Ambient Temperature
0.1
1
10
0.01
0.1
1
100
I Collector Current ( mA
)
C
I
F
Forward Current ( mA )
100
95 11027
10
V
CE
=5V
Figure 8. Collector Current vs. Forward Current
0.1
1
10
0.1
1
10
100
V
CE
Collector Emitter Voltage ( V )
100
95 10985
I Collector Current ( mA
)
C
I
F
=50mA
5mA
2mA
1mA
20mA
10mA
Figure 9. Collector Current vs. Collector Emitter Voltage
TCMT11.. Series
Vishay
Semiconductors
www.vishay.com
6 (12)
Rev. A2, 15Dec00
Document Number 83510
1
10
0
0.2
0.4
0.6
0.8
1.0
V
Collector Emitter Saturation
V
oltage (
V
)
CEsat
I
C
Collector Current ( mA )
100
CTR=50%
20%
10%
95 11028
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
0.1
1
10
1
10
100
1000
CTR Current
T
ransfer Ratio ( % )
I
F
Forward Current ( mA )
100
95 11029
V
CE
=5V
Figure 11. Current Transfer Ratio vs. Forward Current
0
5
10
15
0
10
20
30
40
50
I
F
Forward Current ( mA )
20
95 11031
t / t
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Saturated Operation
V
S
=5V
R
L
=1k
W
t
off
t
on
Figure 12. Turn on / off Time vs. Forward Current
0
2
4
6
0
2
4
6
8
10
I
C
Collector Current ( mA )
10
95 11030
t / t
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Non Saturated
Operation
V
S
=5V
R
L
=100
W
t
off
t
on
Figure 13. Turn on / off Time vs. Collector Current
T1100M
901TK27
Date
Code
(YM)
Company
Logo
Production
Location
Pin 1 Indication
Type
15230
System Letter
Figure 14. Marking example
TCMT11.. Series
Vishay
Semiconductors
7 (12)
www.vishay.com
Document Number 83510
Rev. A2, 15Dec00
Dimensions of TCMT1... in mm
16283
TCMT11.. Series
Vishay
Semiconductors
www.vishay.com
8 (12)
Rev. A2, 15Dec00
Document Number 83510
Dimensions of TCMT4... in mm
15226
TCMT11.. Series
Vishay
Semiconductors
9 (12)
www.vishay.com
Document Number 83510
Rev. A2, 15Dec00
Dimensions of Reel in mm
16515
W
1
W
2
Reel Hub
N
A
Version
Tape Width
A
N
W
1
W
2 max
G
16
330
1
100
1.5
16.4 + 2
22.4
Dimensions of Leader and Trailer in mm
Trailer
Leader
no devices
no devices
min. 200
min. 400
Start
End
96 11818
devices
TCMT11.. Series
Vishay
Semiconductors
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10 (12)
Rev. A2, 15Dec00
Document Number 83510
Dimensions of Tape in mm
16511
TCMT11.. Series
Vishay
Semiconductors
11 (12)
www.vishay.com
Document Number 83510
Rev. A2, 15Dec00
Dimensions of Tape in mm
16510
TCMT11.. Series
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Semiconductors
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12 (12)
Rev. A2, 15Dec00
Document Number 83510
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay
Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay
Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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